Chemical compositions and optical properties of HfOxNy thin films at different substrate temperatures

High-k HfO_xN_y thin films have been grown by radio frequency (rf) reactive sputtering of metal Hf target in N₂/Ar/O₂ ambient at different substrate temperatures. The chemical compositions of the films have been investigated as a function of substrate temperature by X-ray photoelectron spectroscopy (XPS). XPS measurements showed that nitrogen concentration increases with an increase in substrate temperature. Room-temperature spectroscopic ellipsometry (SE) with photon energy 0.75–6.5 eV was used to investigate the optical properties of the films. SE results demonstrated that refractive index n increases with an increase in substrate temperature. Based on TL parameters which were obtained from the best fit results used in a simulation of the measured spectra, meanwhile, we conclude that the energy band gap (E_g) decreases with an increase in substrate temperature.     

掺杂铁电纳米粉的液晶的电光特性

铁电纳米粒子悬浮在向列相液晶母体中，增强介电各向异性，而且对施加的电场信号敏感。本文也展示了纳米粒子对所述复合材料可实现的总的相变的作用。这种方法也许可应用于设计新型显示材料。     

A statistical model for estimating the trend of electrical quantities in power systems

A statistical approach to estimate the trend, over a long time interval, of electrical parameters is proposed in this paper. The trend is determined by processing a limited number of parameter values measured at instants randomly chosen. Experimental results are reported, which show the good performance of the method proposed when it is applied to estimate customers' loads profiles and the trend of some parameters providing information on power quality.     

QMTool: an XML-based management platform for QoS-aware IP networks

Technological and human factors have contributed to the increasing complexity of the network management problem. Heterogeneity and globalization of network resources have, on one hand, increased user expectations for flexible and easy-to-use environments and, on the other, propounded entirely novel ways to face the management problem. Several research efforts recognize the need for integrated solutions to manage both network resources and services in open and global environments. Undoubtedly, these solutions should permit the coexistence of different management models and should interoperate with legacy systems. The presented management system, QoS management tool (QMTool), aspires to address the heterogeneity, complexity, and dynamic behavior of QoS-enabled IP networks by taking advantage of the optimum fit of a number of novel technologies. A layered framework architecture, including element, network management, and visualization service, is provided, and a high level of information abstraction in network configuration and monitoring is introduced mainly based on the capabilities of the Extensible Markup Language (XML). Moreover, the functional components for providing (re-)configuration, fault management monitoring, and network visualization facilities are also presented, followed by notes of implementation issues.     

Optical properties of Nd-doped Ca3(VO4)2 single crystal fiber

Optical absorption and photoluminescence of Ca₃(VO₄)₂ single crystal grown by a floating-zone technique and containing Nd³⁺ ions were investigated. High absorption coefficients and broadening of most absorption bands are present at 300 K, while substructures in some of the same bands can be evidenced at 12 K. Most features of measured spectra are characteristic of random occupation of more than a single Ca²⁺ site by the Nd³⁺ ion and of distortions provoked by different charge compensation mechanisms involving oxygen vacancies promotion in the crystal lattice. Nd³⁺ optical properties were studied by using the Judd-Ofelt theory to calculate the spectral parameters relevant for laser applications.     

X-ray-based measurement of composition during electron beam melting of AISI 316 stainless steel: Part II. Evaporative processes and simulation

An energy dispersive X-ray (EDX) detector mounted on a laboratory scale electron beam furnace (30 kW) was employed to assess the potential use of X-rays as a means of on-line composition monitoring during electron beam (E B) melting of alloys. The design and construction of the collimation and protection systems used for the EDX are described in Part I. In Part II, a mathematical simulation of the heat, mass, and momentum transfer was performed for comparison to the EDX and vapor deposition results. The predicted flow patterns and evaporation rates are used to explain the differences between the two experimental methods. For the EDX spectra measured, the X-rays generated were from the center of the hearth where fluid flow rising from the bulk of the pool is sufficient to maintain the bulk composition despite the high evaporative flux from the surface. The flow moves radially outward from the center of the pool, with the volatile species being depleted. The vapor deposition technique measures the entire region, giving an average surface composition, and it therefore differs from the EDX results, which gave a near bulk composition. This combined study using in-situ EDX measurements and numerical simulations both provided an insight into the phenomena controlling the evaporation in an EB-heated system and demonstrated the viability of using EDX to measure the bulk composition during EB melting processes.     

Effect of spinneret hole diameter on the spinning and properties of acetate fibre

Conclusions The effect of the number and diameter of spinneret holes on hole clogging and the properties of acetate yarns has been investigated under manufacturing conditions.On reducing spinneret hole diameter and increasing the number of holes, the strength and fatigue properties are raised, but the elongation of acetate yarn is reduced.Translated from Khimicheskie Volokna, No. 1, pp. 29–30, January–February, 1986.     

The influence of annealing on the conductivity of magnesium films

Polycrystalline magnesium films were deposited under ultrahigh vacuum by thermal evaporation onto a cooled silica substrate. During the growth process of a film a number of lattice defects are incorporated. It was found that the defect density decreases with increasing thickness. An annealing study of the electrical resistance and defect density in magnesium films was made. The results were interpreted on the basis of Vand's theory. The function F₀ expressing the law of distribution of the decay energies exhibited a maximum. For thick films there was no appreciable variation in the activation energy with thickness. In this case the evaluated activation energy E was found to be about 0.35 eV. For very thin films this energy decreases with increasing thickness.     

Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates

High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers.     

Tunneling recombination in spatially inhomogeneous structures

Methods for finding the parameters (energies and capture coefficients for electrons and holes) of the levels involved in the formation of the recombination flux are suggested. The temperature variation of these parameters for AlGaN/InGaN/GaN and InGaN/SiC structures is discussed. The parameters of the levels responsible for tunneling recombination are determined.