Dynamic Young’s modulus and internal friction in polycrystalline copper

An attempt has been made to measure the temperature dependence of dynamic Young’s modulus together with the related variation of internal friction in polycrystalline copper. A mechanical spectroscopy study was employed using a standard servo hydraulic fatigue testing machine equipped with a scanning laser extensometer. Dynamic Young’s modulus and internal friction were measured over a temperature range of 298 to 873 K at very low frequencies of 0.1, 0.05, and 0.01 Hz. One internal friction peak was observed over the ranges 450 to 700 K, together with marked decreases in the dynamic Young’s modulus in the same temperature range. From a quantitative analysis of the experimental data with the relaxation strength, relaxation time, and activation energy, it is concluded that the peak phenomenon is due to grain-boundary sliding relaxation.     

Effect of bismuth on the growth kinetics of intermetallic compounds in Sn-3.5Ag solder joints: A growth kinetic model

The effect on the growth kinetics of the intermetallic compounds (IMCs) in solder/Cu joints, caused by adding Bi to eutectic Sn-3.5Ag solder alloy, was examined at the aging temperatures of 150°C and 180°C. The Cu₆Sn₅ layer growth was significantly enhanced, but the Cu₃Sn layer growth was slightly retarded by the addition of Bi, resulting in significant growth enhancement of the total (Cu₆Sn₅+Cu₃Sn) IMC layer with increasing Bi addition. The IMC layer growth in the Bi-containing solder joints was accompanied by the accumulation of Bi ahead of the Cu₆Sn₅ layer that resulted in the formation of a liquid layer at the Cu₆Sn₅/solder interface. A kinetic model was developed for the planar growth of the Cu₆Sn₅ and Cu₃Sn layers in the solder joints, accounting for the existence of interfacial reaction barriers. Predictions from the kinetic model showed that the experimental results could be well explained by the hypothesis that the formation of a Bi-rich liquid layer at the Cu₆Sn₅/solder interface reduces the interfacial reaction barrier at the interface.     

Characteristics of ZnO thin film deposited on various metal bottom electrodes

ZnO films for electronic applications were deposited by radio-frequency (rf) sputtering onto various metal bottom electrodes (Pt/Ti, W, Ni) to investigate such structural properties as crystallinity and surface morphology. The crystallinity, surface morphology and composition of the as-deposited films were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and Rutherford back-scattering spectrometry (RBS), respectively. The preferred orientation and surface morphologies were strongly influenced by the type of bottom electrodes. The ZnO films with (200) texturing deposited on Pt/Ti/SiO₂/Si showed a smoother and smaller grain size than those deposited on W and Ni. The ZnO films on Pt and W electrodes exhibited compressive residual stress. This article is based on a presentation made in the 2002 Korea-US symposium on the “Phase Transformations of Nano-Materials”, organized as a special program of the 2002 Annual Meeting of the Korean Institute of Metals and Materials, held at Yonsei University, Seoul, Korea on October 25–26, 2002.     

Separation of oxide inclusions from liquid metal in an applied electrostatic field

It is known that oxide inclusions in liquid metal carry mostly positive charges on their surfaces. In an electrostatic field, therefore, such charged particles suspended in a liquid metal experience forces and accumulate in the region of the negatively charged surface, resulting in the separation of oxide inclusions from the liquid metal. In this study, this principle was experimentally demonstrated for the case of a capacitor cell by the imposition of a d.c. potential on electrodes. The capacitor cell consisted of a dielectric container of Pyrex tube, a high voltage d.c. source, and two electrodes, which were symmetrically attached onto the outer surface of the Pyrex. tube. Experiments were carried out for suspensions of liquid tin/metal oxides, such as SnO₂, WO₃, and PbO under an applied potential of up to 12 kV. All experimental results were in good agreement with the theoretical prediction and showed that the degree of separation was significantly increased with the applied potential.     

Hybrid Model of High Speed Machining Centre Headstock

A hybrid high-speed machining centre headstock model based on two computation methods: the finite element method and the finite difference method is presented. The model allows one to calculate precisely the headstock's indices on the basis of which its optimal operating characteristics can be determined. The presented modelling methods allow one to evaluate a design from thermal, stiffness and durability points of view. By way of illustration, the behaviour of three machining centre headstocks with: an electrospindle on rolling bearings, a conventional spindle and an electrospindle on aerostatic bearings are modelled using the hybrid model.     

Effect of silicon content and annealing temperature on formation of retained austenite and mechanical properties in multi-phase steels

Cold-rolled and annealed ultra-high strength sheet steels with good ductility accompanied by TRIP of retained austenite have received considerable attention in recent years. This paper discusses the effect of silicon content and annealing temperature on the formation of retained austenite and the mechanical properties in Fe-0.34%C-1.7% Mn steels whose structure consists of ferrite, bainite and retained austenite. Silicon inhibited the cementite formation in bainite during isothermal holding and partitioned carbon from bainite to austenite, resulting in an increase in retained austenite content. When the silicon content was increased to 1.0 wt.% or higher, the amount of retained austenite markedly increased leading to good mechanical properties. 0.34%C-1.03%Si-1.7%Mn steel showed a high tensile strength of 1,030 MPa and a total elongation of 34.5% when annealed at 780°C for 5 min followed by isothermal holding at 400°C for 5 min. In this case, the amount of retained austenite was about 25%. The variation in tensile strength-elongation combination had good correlation with that in the amount of retained austenite with both annealing temperature and silicon content. The most retained austenite was obtained in the steel annealed at just above A_C1 temperature. The annealing temperature which gives the most retained austenite was decreased with decreasing the silicon content.     

HIGH-TEMPERATURE ISOPIESTIC STUDIES ON Hg-Pb BINARY AMALGAM

用高温等渗法测定了600K时Hg-Pb二元系中Hg的活度,并用Gibbs-Duhem积分计算了该二元汞齐中Pb的活度。     

Microstructure development of steel during severe plastic deformation

The microstructure development during plastic deformation was reviewed for iron and steel which were subjected to cold rolling or mechanical milling (MM) treatment, and the change in strengthening mechanism caused by the severe plastic deformation (SPD) was also discussed in terms of ultra grain refinement behavior. The microstructure of cold-rolled iron is characterized by a typical dislocation cell structure, where the strength can be explained by dislocation strengthening. It was confirmed that the increase in dislocation density by cold working is limited at 10¹⁶m⁻², which means the maximum hardness obtained by dislocation strengthening is HV3.7 GPa. However, the iron is abnormally work-hardened over the maximum dislocation strengthening by SPD of MM because of the ultra grain refinement caused by the SPD. In addition, impurity of carbon plays an important role in such grain refinement: the carbon addition leads to the formation of nano-crystallized structure in iron.     

Low-energy ion beam treatment of α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>(0001) and improvement of photoluminescence of ZnO thin films

A low energy N₂ ^? ion beam impinged on a α-Al₂O₃(0001) single crystal surface in the range of fluence 5×10¹⁵/cm²?1×10¹⁸/cm² at room temperature. After ion bombardment, chemical bonding on the modified sapphire surface was investigated by x-ray photoelectron spectroscopy. Below a fluence of 1×10¹⁵/cm², only a non-bonded N1s peak at the binding energy 398.7 eV was found, but further irradiation up to 2×10¹⁷/cm² induced Al?O?N bonding at around 403 eV. The occurrence of Al?N bonding was identified at ion fluence higher than 5×10¹⁷/cm² at 396.6 eV. II–VI ZnO thin films were grown on an untreated/ion-beam-induced sapphire surface by pulsed laser deposition (PLD) for the investigation of the modified-substrate effect on photoluminescence. The ZnO films grown on modified sapphire containing Al?O?N bonding only, and both Al?O?N and Al?N bonding showed a significant reduction of the peak related to deep-level defects in photoluminescence. These results are explained in terms of the formation of Al?N?O and Al?O?N layers and relaxation of the interfacial strain between Al₂O₃ and ZnO.     

Stabilised finite element methods for a bending moment formulation of the Reissner-Mindlin plate model

This work presents new stabilised finite element methods for a bending moments formulation of the Reissner-Mindlin plate model. The introduction of the bending moment as an extra unknown leads to a new weak formulation, where the symmetry of this variable is imposed strongly in the space. This weak problem is proved to be well-posed, and stabilised Galerkin schemes for its discretisation are presented and analysed. The finite element methods are such that the bending moment tensor is sought in a finite element space constituted of piecewise linear continuos and symmetric tensors. Optimal error estimates are proved, and these findings are illustrated by representative numerical experiments.