光学全交叉网络与SW榕树（F＝S＝2）网络拓扑等价的多样性

本文对有关互连网络拓扑等价的分析方法作了简单评述。并采用互连网络拓扑等价的图分析法分析了自由空间光学互连全交叉网络与ＳＷ榕树网络的拓扑等价及其多样性，拓展了全交叉网络在数字光计算、光子交换及多处理机系统的潜在应用。     

Affect intensity and cardiac arousal.

Investigated in 3 experiments the relationships between affect intensity and basal, evoked, and perceived cardiac arousal. Affect intensity was assessed using R. J. Larsen and E. Diener's (1987) Affect Intensity Measure (AIM). Cardiac arousal was evoked with exercise in the 1st study and with mental arithmetic in the 2nd and 3rd. Perceived cardiac arousal was measured under optimal conditions using a standard heartbeat discrimination procedure. Women as a group scored higher on the AIM. Affect intensity was unrelated to basal or evoked cardiac arousal and was negatively related to perceived cardiac arousal in all 3 studies. Data suggest that affect intensity, although unrelated to actual physiological arousal, is negatively related to the accuracy with which individuals perceive their own arousal. Results are discussed within the context of an expanded arousal-regulation model (J. Blascovich, 1990). (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

D_2EHDTPA萃取铟的热力学研究

报道了用二 (2 乙基己基 )二硫代磷酸为萃取剂 ,以正庚烷为稀释剂萃取铟的热力学研究。在In2 (SO4 ) 3+Na2 SO4 +D2 EHDTPA +n C7H1 6 +H2 O体系中 ,在温度 2 78.15～ 3 0 3 .15K和离子强度 0 .1～ 2 .0mol·kg- 1 范围内 ,以Na2 SO4 为支持电解质 ,测定了萃取平衡水相中In3+浓度和pH值。计算了萃取反应的标准平衡常数K0 ,并得到经验公式logK0 =43 .93 -5 3 68.5 4 T -0 .0 699T ,同时计算了萃取反应的其他热力学量 ,并指出了焓和熵都是此萃取过程的推动力     

准分子激光泵浦的皮秒染料激光器

利用准分子激光泵浦猝灭式染料激光器，获得了３０ｐｓ的可调谐染料激光脉冲输出。     

变压器绝缘电阻低于允许值的处理

本文就一台主变压器绝缘电阻低于“规程”允许值的问题，进行了原因分析，提出了简易的处理方法，取得了较好效果，同时提出了几个值得探讨的问题，对提高变压器的安全运行水平有一定的现实意义。     

The process window of a-Si/Ti bilayer metallization for anoxidation-resistant and self-aligned TiSi2 process

The dependences of both oxidation-resistant and self-aligned silicidation properties on the thicknesses of top amorphous-Si (a-Si) and Ti metal in an a-Si/Ti bilayer process are presented. It is shown that a thin silicide layer formed during the reaction between a-Si and Ti films becomes a stable oxidation and nitridation barrier for oxygen- and nitrogen-related impurities. Moreover, the formation sequence of the silicide phase depends not only on the annealing temperature but also on the thickness of the Ti film. In addition, the preferential orientation of the silicide phase after annealing at high temperature also shows a strong dependence on the thickness of Ti film, which is attributed to the difference of the grain size in the polycrystalline silicide film. The allowed process window for the a-Si thickness can be determined experimentally and a reproducible and homogeneous self-aligned TiSi₂ film can be easily obtained by using the a-Si/Ti bilayer process in salicide applications despite high-level contaminations of oxygen impurities in both the as-deposited Ti film and the annealing ambient     

多层气敏薄膜表面吸附及界面扩散的研究

制备了ＳｎＯ３／ＺｎＯ及ＺｎＯ／ＳｎＯ３多层结构的气敏薄膜，用能谱结合氩离子刻蚀的方法及Ｘ射线衍射法，对薄膜的表面吸附。膜间的相互与组成等进行了研究，结果表明：薄膜表面存在少量的吸附多层膜中锌的扩散远比锡一个模型，对吸附现象作了初步的解释，讨论了造成锌锡扩散的原因。     

GaAs FET辐射退化研究

低噪声ＧａＡｓ ＦＥＴ和功率ＧａＡｓ ＦＥＴ经中子辐射都未发生致命性的通或断失效，直流偏置伏态下，其失效模式仅仅表现为源漏饱和电流ＩＤＳＳ的退化降低，据此提出了ＩＤＳＳ退化失效与快中子注量φｎ之间的解析关键式ｌｎｙ＝ａ＋ｂｌｎφ。