Void-effect modeling of flip-chip encapsulation on ceramicsubstrate

A detailed numerical and experimental study of the thermal-mechanical stress and strain in the solder bumps (C4s) of a flip-chip ceramic chip carrier has been completed. The numerical model used was based upon the finite element method. The model simulated accelerated thermal cycling (ATC) from 0°C to 100°C. Several parametric studies were conducted, including the effects of chip size, micro-encapsulation, and the effect of the presence of voids in the micro-encapsulant. It was notably found that the presence of voids in the encapsulant does not significantly increase the stress/strain in the C4s, with the exception of very large voids and voids at or near the edge of the chip     

高效率连续波运转的激光二极管端面抽运914 nm Nd:YVO4激光器

利用激光二极管(LD)抽运Nd∶YVO4晶体产生914 nm谱线振荡,再通过腔内倍频技术获得457 nm激光输出,是获得大功率蓝光激光器的一条重要的技术路线,因而实现高效率运转的914 nm激光输出则是方案的关键。报道了激光二极管端面抽运Nd∶YVO4晶体、连续波运转的大功率914 nm准三能级激光器,方案中采用掺杂原子数分数为0.1%的低掺杂Nd∶YVO4晶体,有效地降低了热效应的影响,并通过准三能级理论模型的模拟计算选择了最佳晶体长度;通过对腔镜介质膜参数的适当控制,有效地抑制了波长为1064 nm和1342 nm的高增益谱线。实验中,914 nm激光器的阈值抽运功率仅为8.5 W,在31 W的抽运功率下914 nm激光输出功率高达7.2 W,激光器的斜率效率为32%,光-光转换效率为23.2%。     

地铁车辆变频空调提升制冷效果和节能示范研究

该文通过在北京地铁一号线车辆段进行正线跟车实时记录装有变频空调与原定频空调车厢内温度及耗电量数据,从温控精度以及节能方面进行对比分析,得到变频空调温度控制精度高于定频空调,装有变频空调车厢内温度均匀性优于原定频空调;变频空调相比于定频空调来说节电效果明显,在提高乘客舒适度的同时,耗电量减少30％-40％,降低运营成本.     

微机械可调谐滤波器的研制

利用 Ga As/Al Ga As分布反馈 Bragg反射镜在 Ga As衬底上制作了一个微机械的调谐滤波器 .该器件在 7V调谐电压下调谐范围达28nm     

光分组网中冲突解决方案的研究新进展

综述了目前解决光分组网冲突的几种方案,及其最新研究进展,指出在今后光分组网中可能采用的最佳冲 突解决方案。     

平面型RTD及其MOBILE的设计与研制

鉴于已报道的平面共振遂穿二极管(PRTD)存在的缺点,文中提出了一种新的平面RTD器件结构.以n+ GaAs代替半绝缘GaAs衬底,利用硼离子注入产生的非晶化作为RTD器件的电隔离,成功设计研制平面型RTD和由其构成的单-双稳转换逻辑单元,此种结构可适用于以输出端作为公用端的所有电路.     

Si/SiGe resonant interband tunnel diode with f/sub r0/ 20.2 GHz and peak current density 218 kA/cm/sup 2/ for K-band mixed-signal applications

This letter presents the room-temperature high-frequency operation of Si/SiGe-based resonant interband tunnel diodes that were fabricated by low-temperature molecular beam epitaxy. The resulting devices show a resistive cutoff frequency f/sub r0/ of 20.2 GHz with a peak current density of 218 kA/cm/sup 2/, a speed index of 35.9 mV/ps, and a peak-to-valley current ratio of 1.47. A specific contact resistivity of 5.3/spl times/10/sup -7/ /spl Omega//spl middot/cm/sup 2/ extracted from RF measurements was achieved by Ni silicidation through a P /spl delta/-doped quantum well by rapid thermal sintering at 430/spl deg/C for 30 s. The resulting devices are very good candidates for RF high-power mixed-signal applications. The device structures presented here are compatible with a standard complementary metal-oxide-semiconductor or heterojunction bipolar transistor process.     

Target Location Estimation in Sensor Networks With Quantized Data

A signal intensity based maximum-likelihood (ML) target location estimator that uses quantized data is proposed for wireless sensor networks (WSNs). The signal intensity received at local sensors is assumed to be inversely proportional to the square of the distance from the target. The ML estimator and its corresponding Crameacuter-Rao lower bound (CRLB) are derived. Simulation results show that this estimator is much more accurate than the heuristic weighted average methods, and it can reach the CRLB even with a relatively small amount of data. In addition, the optimal design method for quantization thresholds, as well as two heuristic design methods, are presented. The heuristic design methods, which require minimum prior information about the system, prove to be very robust under various situations     

1.3μm自组织InGaAs/InAs/GaAs量子点激光器分子束外延生长

报道了分子束外延生长的1.3μm多层InGaAs/InAs/GaAs自组织量子点及其室温连续激射激光器.室温带边发射峰的半高宽小于35meV,表明量子点大小比较均匀.原子力显微镜图像显示,量子点密度可以控制在(1～7)×1010cm-2范围之内,而面密度处于4×1010cm-2时有良好的光致发光谱性能.含有三到五层1. 3μm量子点的激光器成功实现了室温连续激射.