Identification of reduced-order thermal therapy models using thermal MR images: theory and validation

In this paper, we develop and validate a method to identify computationally efficient site- and patient-specific models of ultrasound thermal therapies from MR thermal images. The models of the specific absorption rate of the transduced energy and the temperature response of the therapy target are identified in the reduced basis of proper orthogonal decomposition of thermal images, acquired in response to a mild thermal test excitation. The method permits dynamic reidentification of the treatment models during the therapy by recursively utilizing newly acquired images. Such adaptation is particularly important during high-temperature therapies, which are known to substantially and rapidly change tissue properties and blood perfusion. The developed theory was validated for the case of focused ultrasound heating of a tissue phantom. The experimental and computational results indicate that the developed approach produces accurate low-dimensional treatment models despite temporal and spatial noises in MR images and slow image acquisition rate.     

基于清流备播的数字电视应急处理系统研究

为保障数字电视的不间断播出,本文对基于清流备播的数字电视应急处理系统进行了研究,包括:背景分析、加入清流备播系统后的数字电视前端平台架构、清流备播系统架构以及基于清流备播系统的数字电视应急处理系统架构。     

In-Au复合焊料研究

大功率半导体激光器封装过程中,为降低封装引入的应力,踊般用In焊料进行焊接。In焊料具有易氧化、易"攀爬"的特性,因而导致封装成品率很低。提出了一种新型焊料——In-Au复合焊料,使用此焊料进行封装,很好地解决了上述问题。通过理论分析及实验摸索,确定了In-Au复合焊料蒸发条件,分别利用纯In焊料和In-Au复合焊料封装了一批激光器样品,通过对比这两组样品的焊料浸润性、电光参数、剪切强度等,发现利用In-Au复合焊料封装的样品优于纯In焊料封装的样品。     

Efficient Infrared Solar Cells Employing Quantum Dot Solids with Strong Inter-Dot Coupling and Efficient Passivation

Lead chalcogenide quantum dot (QD) infrared (IR) solar cells are promising devices for breaking through the theoretical efficiency limit of single-junction solar cells by harvesting the low-energy IR photons that cannot be utilized by common devices. However, the device performance of QD IR photovoltaic is limited by the restrictive relation between open-circuit voltages (V_OC) and short circuit current densities (J_SC), caused by the contradiction between surface passivation and electronic coupling of QD solids. Here, a strategy is developed to decouple this restriction via epitaxially coating a thin PbS shell over the PbSe QDs (PbSe/PbS QDs) combined with in situ halide passivation. The strong electronic coupling from the PbSe core gives rise to significant carrier delocalization, which guarantees effective carrier transport. Benefited from the protection of PbS shell and in situ halide passivation, excellent trap-state control of QDs is eventually achieved after the ligand exchange. By a fine control of the PbS shell thickness, outstanding IR J_SC of 6.38 mA cm⁻² and IR V_OC of 0.347 V are simultaneously achieved under the 1100 nm-filtered solar illumination, providing a new route to unfreeze the trade-off between V_OC and J_SC limited by the photoactive layer with a given bandgap.     

窗口层对三结电池双层减反膜的影响

窗口层的厚度对高效三层太阳能电池具有重要影响。本文针对太阳能电池的地面应用,优化了三节电池（Ga0.5In0.5P/In0.02Ga0.98As/Ge）的双层反射膜（SiO2/TiO2, SiO2/ZnS）。同时讨论了在双层减反膜优化结构下,变化Al0.5In0.5P窗口层厚度引起反射率的变化。     

Room-temperature optically pumped InAs/GaAs quantum dots microdisk lasers on SiO2/Si chip

We report on room temperature continuous-wave optically pumped InAs/GaAs quantum dot whispering gallery mode microdisk lasers,heterogeneously integrated on silica/silicon chips.The microdisks are fabricated by photolithography and inductively coupled plasma etching.The lasing wavelength is approximately 1200 nm and the obtained lowest laser threshold is approximately 28μW.The experimental results show an approach of possible integrated Ⅲ-Ⅴ optical active materials on silica/silicon chip for low threshold WGM microdisk lasers.     

移动城域传送网建设模式浅析

本文针对业务IP化及无线网络的不断扩大对现有城域网的影响,提出业务转型期内移动城域网的建设模式。     

A 1.65μm three-section distributed Bragg reflector （DBR） laser for CH4 gas sensors

A 1.65-μm three-section distributed Bragg reflector(DBR) laser for CH4 gas sensors is reported.The DBR laser has a wide tunable range covering the R3 and R4 methane absorption line manifolds.The wavelength tunability properties,temperature stability and laser linewidth are characterized and analyzed.Several advantages were demonstrated compared with traditional DFB lasers in harmonic detection.     

Highly Dispersed NiO Clusters Induced Electron Delocalization of Ni?N?C Catalysts for Enhanced CO2 Electroreduction

Oxygen-regulated Ni-based single-atom catalysts (SACs) show great potential in accelerating the kinetics of electrocatalytic CO₂ reduction reaction (CO₂RR). However, it remains a challenge to precisely control the coordination environment of Ni O moieties and achieve high activity at high overpotentials. Herein, a facile carbonization coupled oxidation strategy is developed to mass produce NiO clusters-decorated Ni N C SACs that exhibit a high Faradaic efficiency of CO (maximum of 96.5%) over a wide potential range (−0.9 to −1.3 V versus reversible hydrogen electrode) and a high turnover frequency for CO production of 10 120 h⁻¹ even at the high overpotential of 1.19 V. Density functional theory calculations reveal that the highly dispersed NiO clusters induce electron delocalization of active sites and reduce the energy barriers for *COOH intermediates formation from CO₂, leading to an enhanced reaction kinetics for CO production. This study opens a new universal pathway for the construction of oxygen-regulated metal-based SACs for various catalytic applications.     

Filter-Free Narrowband Photomultiplication-Type Planar Heterojunction Organic Photodetectors

Filter-free narrowband photomultiplication-type planar heterojunction (PHJ) organic photodetectors (PM-PHOPDs) are first realized by employing a thick front donor layer and an ultrathin PC₇₁BM layer. The thick front donor layer is employed as an optical field adjusting (OFA) layer. The sequentially coated PC₇₁BM will diffuse slightly into OFA layer, which works as interfacial electron traps to capture photogenerated electrons for assisting hole tunneling injection. The P3HT/PC₇₁BM-based PM-PHOPDs exhibit narrowband response with full-width of half-maximum of 32 nm and external quantum efficiency (EQE) of 1700% at 650 nm under −20 V bias. Due to the enhanced hole transport and reduced charge recombination in PHJ compared to those in bulk heterojunction (BHJ), the EQE of P3HT/PC₇₁BM-based narrowband PM-PHOPDs is twice as P3HT:PC₇₁BM BHJ-based narrowband PM-OPDs under the same bias. The response peak of PM-PHOPDs is adjusted from 650 to 695 or 745 nm by incorporating SMPV1 or DRCN5T in OFA layers due to the red-shifted absorption edge. The EQEs of 3600% at 695 nm and 870% at 745 nm are obtained for P3HT:SMPV1 and P3HT:DRCN5T-based PM-PHOPDs under −20 V bias, respectively. This work provides a smart strategy to achieve narrowband PM-OPDs by designing different OFA layers.