High electron mobility 18300 cm2/V·s in the InAIAs/lnGaAs pseudomorphic structure obtained by channel indium composition modulation

The highest electron mobility yet reported for an InP-based pseudomorphic structure at room temperature, 18300 cm²/V·s, has been obtained by using a structure with an indium composition modulated channel, namely, In_0.53Ga_0.47As/ In_0.8Ga_0.2As/InAs/In_0.8Ga_0.2As/In_0.53Ga_0.47As. Although the total thickness of the high In-content layers (In_0.8Ga_0.2As/InAs/In_0.8Ga_0.2As) exceeds the critical thick-ness predicted by Matthews theory, In_0.8Ga_0.2As insertion makes it possible to form smooth In_0.53Ga_0.47As/In_0.8Ga_0.2As and In_0.8Ga_0.2As/InAs heterointerfaces. This structure can successfully enhance carrier confinement in the high In-content layers. This superior carrier confinement can be expected to lead to the highest yet reported electron mobility.     

Analog Circuit Design Methodology in a Low Power RISC Microprocessor

There are various kinds of analog CMOS circuits in microprocessors. IOs, clock distribution circuits including PLL, memories are the main analog circuits. The circuit techniques to achieve low power dissipation combined with high performance in newest prototype chip in the Super H RISC engines are described. A TLB delay can be decreased by using a CAM with a differential amplifier to generate the match signal. The accelerator circuit also helps to speed up the TLB circuit, enabling single-cycle operation. A fabricated 96-mm² test chip with the super H architecture using 0.35-m four metal CMOS technology is capable of 167-MHz operation at 300 Dhrystone MIPS with 2.0-W power dissipation.     

Junction capacitance reduction due to self-aligned pocketimplantation in elevated source/drain NMOSFETs

A new advantage of an elevated source/drain (S/D) configuration to improve MOSFET characteristics is presented. By adopting pocket implantation into an elevated S/D structure which was formed by Si selective epitaxial growth and gate sidewall removal, we demonstrate that the parasitic junction capacitance as well as the junction leakage was significantly reduced for an NMOSFET while maintaining its good short channel characteristics. These successful results are attributed to the modification of the boron impurity profile in the deep S/D regions. The capacitance reduction rate, furthermore, was more remarkable as the pocket dose was further increased. This means that the present self-aligned pocket implantation is very promising for future MOSFETs with a very short gate length, where high pocket dosage will be required to suppress the short channel effect     

Stress-induced martensite formation in Cu−Al−Ni alloys

A study has been made of superelasticity and the strain-memory effect in Cu?Al?Ni alloys in the composition range 14 wt pct Al and 2 to 3 wt pct Ni. These alloys have a bcc structure on quenching and show a low temperature martensitic transformation which is responsible for both the superelastic and strain-memory effects. Tests on both single and polycrystalline specimens showed that the maximum superelasticity occurred close toA _s. At higher temperatures the effect gradually decreased, whilst at lower temperatures it decreased very quickly. The magnitude of the effect was large in single crystal specimens (>5.8 pct), but small in polycrystal specimens (<1.5 pct). The superelastic effect was caused by stress-induced martensite (SIM). Two types of SIM were observed; thin plates of thermoelastic martensite which were always reversible, and wide plates of burst-type martensite. This burst-type martensite was responsible for the major portion of SIM, and whether it was reversible or not on removal of the stress controlled the amount of superelasticity observed. The strain-memory effect occurred on deformation either in the martensitic state (temperature <M _f) or in the temperature range where the martensite once formed was stable (temperature close toM _s). Deformation caused reorientation of the martensite plates and when the specimen was heated, the martensite disappeared and the specimen reverted back to its original shape. This effect was explained on the basis of development of martensite plates of favorable orientation on stressing.     

The effect of additional albumin with optimal concentration on the reperfusion after preservation of isolated rat hearts

Glucagon has been demonstrated to stimulate the uptake of bile acid in isolated rat hepatocytes (Am. J. Physiol., 249, G427 (1985)). In the present study, we determined the influence of glucagon on the hepatic transport of a bile acid, taurocholate (TCA), in isolated rat livers. A single-pass perfusion and a rapid-injection, multiple indicator dilution method were employed. The hepatic availability at steady-state was 0.04. With the presence of glucagon in the perfusate (from 10(-9) to 10(-7) M), the bile flow rate was stimulated by 30%, while hepatic availability was decreased from 0.04 to 0.02 with a stepwise increase in glucagon concentration. Thirty min after the infusion of glucagon (300 nM), [3H]TCA and [14C]inulin were injected in a bolus state into the portal vein, and the outflow was collected at 1.0 s intervals over 30 s. Glucagon decreased the instantaneous hepatic availability by 50% compared to the control level, and was thus compatible with the steady-state experiments. In the control experiment, the influx clearance (PSinf) was 20 times higher than the efflux clearance (PSeff). Glucagon (300 nM) in the perfusate enhanced PSinf by 50% of the control, whereas sequestration clearance (CLseq) and the biliary excretion rate constant remained unchanged. PSeff was stimulated to 2 times the control, but still remained much smaller than CLseq. Based on the comparison of PSinf, PSeff and CLseq, the rate-determining process of TCA hepatic elimination was the influx process in both the presence and absence of glucagon. Taken together, the enhancement of the influx process was responsible for the decrease in TCA hepatic availability caused by glucagon.(ABSTRACT TRUNCATED AT 250 WORDS)     

无牙颌患者戴不同厚度的上腭托对连续发[n]音时下颌位置的影响

目的:研究不同厚度的上腭托对无牙颌患者连续发[n]音时下颌位置的影响.方法:10名无牙颌患者,平均年龄为76.4岁.每一个患者按照随机原则,在不戴上腭托(对照组)和分别戴用3 mm、5 mm的上腭托时,用K7下颌运动轨迹描记仪记录下颌的位置,包括连续发[n]音4 s时下颌的位置和下颌息止颌位.结果:不戴上腭托(对照组)连续发[n]音时,垂直向的颌间距离的平均值为(1.69±1.26)mm,前后向的平均值为(1.74±1.18)mm,戴入实验上腭托后,在垂直向和水平向的颌间距离都稍有增加,但差异无统计学意义.不戴实验上腭托(即对照组)的息止颌位时,在垂直方向和水平方向的颌间距离的平均值分别是(2.91±2.28)mm和(2.56±1.88)mm,戴入实验上腭托后,在垂直向和水平向的颌间距离都稍有减小,即戴3 mm上腭托分别为(2.52±1.88)mm和(2.46±1.64)mm;戴5 mm上腭托的颌间距离分别为(2.45±1.70)mm和(2.22±1.31)mm,但差异无统计学意义.结论:总义齿患者连续发[n]音时,戴不同厚度的上腭托对下颌的颌间距离没有显著影响;总义齿患者戴不同厚度的上腭托对下颌息止颌位没有明显影响.     

ICP-MS法测定地电化学(泡塑)样品中痕量金

通过实验验证了在酸性介质存在条件下用ICP-MS法测定地电化学(泡塑)样品中痕量金的可行性,在稀释因子存在条件下得到了方法的检出限为3 ng、精密度为1.40％.同时,通过制备模拟负载不同金含量的泡塑样品,计算加入标准物质回收率为88.80％～107.37％;与GAAS法测定结果进行显著性检验发现两组数据之间无显著性差...     

Composition dependence of young’s modulus in Ti-V, Ti-Nb, and Ti-V-Sn alloys

The Young’s modulus of Ti-V and Ti-V-Sn alloys quenched from the β-phase region after solution treatment and cold rolling was investigated in relation to alloy compositions, microstructures, and constituent phases. The composition dependence of the Young’s modulus for quenched Ti-V binary alloys shows two minima of 69 GPa at Ti-10 mass pct V and 72 GPa at Ti-26 mass pct V. Between the two compositions, athermalω or stress-induced ω is introduced in retainedβ phase and increases Young’s modulus. That is, a low Young’s modulus is attained unless alloys undergoω transformation. In Ti-5 and -8 mass pct V, which under goα′ (hcp) martensitic transformation on quenching, the Young’s modulus further decreases by cold rolling, which can be reasonably explained by the formation ofα′ rolling texture. Comparing Young’s modulus in Ti-V binary alloy with that in Ti-Nb binary alloy, it is found that Young’s modulus is remarkably increased by athermal- or stress inducedω phase, and it shows a minimum when both martensitic andω transformation are suppressed during quenching in metastableβ alloys. The Sn addition to Ti-V binary alloy retards or suppresses athermal and stress-inducedω transformation, thereby decreasing Young’s modulus. Young’s modulus exhibits minimum values of 51 GPa in quenched (Ti-12 pct V)-2 pct Sn and of 57 GPa in cold-rolled (Ti-12 pct V)-6 pct Sn.     

A thermodynamic study of silica-saturated iron silicate slags in equilibrium with liquid copper

The thermodynamic properties of silica-saturated iron silicate slags in equilibrium with liquid copper have been studied from oxygen partial pressure measurements in the temperature range from 1490 to 1580 K by means of a solid electrolyte galvanic cell. The following cells were used: Pt, Ni-NiO/O⁼/slag-Cu(l), Cr₂O₃, Pt; Pt, Fe-FeO/O⁼/slag-Cu(Fe sat.), Fe. A strong correlation was found between oxygen pressure and the copper content of the slag; the copper content increased from less than 1 pct near iron saturation to about 4 pct at an oxygen partial pressure of 7.2 x 10^?3 Pa. A similar correlation was found between the ferric iron/total iron ratio and the oxygen pressure. The oxygen content in liquid copper decreased with increasing iron content in liquid copper and increased slightly near iron saturation. This behavior could be explained qualitatively by using the standard free energy of formation of FeO and the activities of components.