机抖激光陀螺抖动机构的温度特性的研究

研究了机抖激光陀螺抖动偏频量与温度之间的关系。通过大量的重复性高低温实验,证明了抖动偏频量与温度的线性关系,并得到了拟合直线表达式。结果表明,抖动偏频量与温度具有较好的线性关系,而且具有较好的重复性。同时用抖动偏频量对陀螺的零漂进行补偿,提高了陀螺的精度。     

吸湿干爽性涤纶长丝的研制

采用德国吉玛公司直纺和日本东丽公司卷绕设备,探索差别化吸湿干爽性涤纶长丝的生产工艺。     

微波干燥在气相超稳Y型分子筛制备中的应用研究

研究了微波干燥在气相超稳Y型分子筛制备中的应用。结果表明，分子筛经微波干燥后，其理化性质有所改善，结晶度提高，经气相超稳化反应后其产品结构及物化性质与传统电加热干燥后的气相超稳产品基本一致，说明微波干燥可替代传统干燥方式。与传统电加热干燥方式相比，微波干燥能缩短干燥时间，有效降低能耗。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

在二(2-乙基己基)磷酸钠的微乳液中金属萃合物对水增溶的影响

测算了由二（2－乙基己基）磷酸钠，金属盐（CoSO4,NiSO4,ZnSO4,MgCl2或Cr(NO3)3)水溶液，正辛醇和正辛烷组成的微乳液中正辛醇从连续油相到界面的ΔGo→i^o和水的极限增容量φ'H2O。用金属萃取络合物反胶束的形成及其亲油性解释了金属离子对φ'H2O和ΔGo→i^o的影响。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Evaluation of a compound probability model with tower-mountedscatterometer data

Six months of data from the YSCAT94 experiment conducted at the CCIW WAVES research platform on Lake Ontario, Canada, are analyzed to evaluate a compound probability model. YSCAT was an ultrawideband small footprint (≈1 m) microwave scatterometer that operated at frequencies of 2-18 GHz, incidence angles from 0° to 60°, both h-pol and v-pol, and which tracked the wind using simultaneous weather measurements. The probability distribution function of the measured instantaneous backscattered amplitude (p(a)) is compared to theoretical distributions developed from-the composite model and a simple wave spectrum. Model parameters of the resulting Rayleigh/generalized lognormal distribution probability density function (pdf) (C, a₁ , and a₂) are derived directly from the data and are found to demonstrate relationships with wind speed, incidence angle, and radar frequency     

Evaluating the impact of CASE: an empirical comparison of retrospective and cross-sectional survey approaches

The purpose of this paper is to evaluate two methods of assessing the productivity and quality impact of Computer Aided Software Engineering (CASE) and Fourth Generation Language (4GL) technologies: (1) by the retrospective method; and (2) the cross-sectional method. Both methods involve the use of questionnaire surveys. Developers' perceptions depend on the context in which they are expressed and this includes expectations about the effectiveness of a given software product. Consequently, it is generally not reliable to base inferences about the relative merits of CASE and 4GLs on a cross-sectional comparison of two separate samples of users. The retrospective method that requires each respondent to directly compare different products is shown to be more reliable. However, there may be scope to employ cross-sectional comparisons of the findings from different samples where both sets of respondents use the same reference point for their judgements, and where numerical rather than verbal rating scales are used to measure perceptions.