移动城域传送网建设模式浅析

本文针对业务IP化及无线网络的不断扩大对现有城域网的影响,提出业务转型期内移动城域网的建设模式。     

Room-temperature optically pumped InAs/GaAs quantum dots microdisk lasers on SiO2/Si chip

We report on room temperature continuous-wave optically pumped InAs/GaAs quantum dot whispering gallery mode microdisk lasers,heterogeneously integrated on silica/silicon chips.The microdisks are fabricated by photolithography and inductively coupled plasma etching.The lasing wavelength is approximately 1200 nm and the obtained lowest laser threshold is approximately 28μW.The experimental results show an approach of possible integrated Ⅲ-Ⅴ optical active materials on silica/silicon chip for low threshold WGM microdisk lasers.     

Efficient Infrared Solar Cells Employing Quantum Dot Solids with Strong Inter-Dot Coupling and Efficient Passivation

Lead chalcogenide quantum dot (QD) infrared (IR) solar cells are promising devices for breaking through the theoretical efficiency limit of single-junction solar cells by harvesting the low-energy IR photons that cannot be utilized by common devices. However, the device performance of QD IR photovoltaic is limited by the restrictive relation between open-circuit voltages (V_OC) and short circuit current densities (J_SC), caused by the contradiction between surface passivation and electronic coupling of QD solids. Here, a strategy is developed to decouple this restriction via epitaxially coating a thin PbS shell over the PbSe QDs (PbSe/PbS QDs) combined with in situ halide passivation. The strong electronic coupling from the PbSe core gives rise to significant carrier delocalization, which guarantees effective carrier transport. Benefited from the protection of PbS shell and in situ halide passivation, excellent trap-state control of QDs is eventually achieved after the ligand exchange. By a fine control of the PbS shell thickness, outstanding IR J_SC of 6.38 mA cm⁻² and IR V_OC of 0.347 V are simultaneously achieved under the 1100 nm-filtered solar illumination, providing a new route to unfreeze the trade-off between V_OC and J_SC limited by the photoactive layer with a given bandgap.     

Identification of reduced-order thermal therapy models using thermal MR images: theory and validation

In this paper, we develop and validate a method to identify computationally efficient site- and patient-specific models of ultrasound thermal therapies from MR thermal images. The models of the specific absorption rate of the transduced energy and the temperature response of the therapy target are identified in the reduced basis of proper orthogonal decomposition of thermal images, acquired in response to a mild thermal test excitation. The method permits dynamic reidentification of the treatment models during the therapy by recursively utilizing newly acquired images. Such adaptation is particularly important during high-temperature therapies, which are known to substantially and rapidly change tissue properties and blood perfusion. The developed theory was validated for the case of focused ultrasound heating of a tissue phantom. The experimental and computational results indicate that the developed approach produces accurate low-dimensional treatment models despite temporal and spatial noises in MR images and slow image acquisition rate.     

In-Au复合焊料研究

大功率半导体激光器封装过程中,为降低封装引入的应力,踊般用In焊料进行焊接。In焊料具有易氧化、易"攀爬"的特性,因而导致封装成品率很低。提出了一种新型焊料——In-Au复合焊料,使用此焊料进行封装,很好地解决了上述问题。通过理论分析及实验摸索,确定了In-Au复合焊料蒸发条件,分别利用纯In焊料和In-Au复合焊料封装了一批激光器样品,通过对比这两组样品的焊料浸润性、电光参数、剪切强度等,发现利用In-Au复合焊料封装的样品优于纯In焊料封装的样品。     

中国移动智能网能力开发之路的思考

【】：随着中国移动智能网近14年的建设及发展,传统的增值业务已无法满足用户日益更新的业务需求。但从智能网可提供的网络能力来看,有些能力在今后的业务发展中还将被保留或增强。本文基于现有智能网网络架构、业务发展情况,分析了目前业务发展受限的主要问题,提出了未来智能网将进行能力开放的发展思路及未来业务网架构的调整方向,并结合目前智能网设备的情况,现网SCP未来调整及演进方向。     

Detection of lead ions with AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Lead poisoning is a serious environmental concern, which is a health threat. Existing technologies always have some drawbacks, which restrict their application ranges, such as real time monitoring. To solve this problem, glutathione was functionalized on the Au-coated gate area of the pseudomorphic high electron mobility transistor (pHEMT) to detect trace amounts of Pb²⁺. The positive charge of lead ions will cause a positive potential on the Au gate of the pHEMT sensor, which will increase the current between the source and the drain. The response range for Pb²⁺ detection has been determined in the concentrations from 0.1 pmol/L to 10 pmol/L. To our knowledge, this is currently the best result for detecting lead ions.     

大功率半导体激光列阵单光纤耦合技术

利用阶梯反射镜整形技术和偏振合束及波长合束技术成功将两只波长为808nm和两只波长为980nm的40W大功率半导体激光器光束进行混合,最后得到输出功率为95.8W、耦合效率为60%的双波长大功率半导体激光列阵单光纤耦合模块,光纤芯径为400μm,数值孔径为0.22.     

EV-DO信道估计选径策略探讨

EV-DO是高通公司在cdma2000基础上提出的基于提高分组数据性能的系统标准。文章从数据业务和传统的语音业务的比较说起,介绍了EV-DO系统中区别于cdma2000的技术特征(包括自适应编码、快速自动重复请求机制(ARQ)、速率控制、时隙导频工作方式等),并以此平台为例阐述了信道估计中的选径意义和策略,最后简单分析不同选径策略的性能,其中选径策略的讨论是基于带导频信道的无线系统平台而提出的,具有一定的普遍性。     

综合孔径辐射计可见度函数预处理算法及时域仿真研究

该文研究了干涉式综合孔径辐射计可见度函数的预处理算法,包括A/D偏置校正、三阶数字相关系数到模拟相关系数的校正、IQ非正交校正以及空间去相关的误差校正等等。由于这是首次将三阶量化数字相关的定标方法应用于对地观测领域,对其进行了详细的分析。该文利用蒙特卡洛方法对可见度函数的预处理算法进行了时域仿真的研究。并通过地球同步轨道毫米波大气温度探测仪地面样机系统对算法进行了验证,证明了该算法的正确性。经过可见度预处理算法校正得到的结果的绝对误差小于真值的0.1%。证明该算法可以应用于地球同步轨道毫米波大气温度探测仪星载系统定标中,经过校正得到的相关结果可以直接用于亮温图像的反演。