A Novel FRFT Beamformer for Rayleigh Faded Channels

A method of optimal beamforming for flat Rayleigh faded channels using the Fractional Fourier Transform (FRFT) is considered in this paper. It has been demonstrated through simulations that optimal beamforming with FRFT allows smaller mean-square errors in restoring signals degraded with linear time-or frequency variant distortions and Additive White Gaussian Noise. This is made possible by the additional flexibility that comes with free parameter ‘a’ of the fractional Fourier transform as oppose to the classical Fourier transform (FT). The method is especially useful in moving source problems, where Doppler Effect produces frequency shift when the source is moving, as in mobile and wireless communication where user produces the frequency shift while moving. In this paper it is shown through simulations that beamforming in fractional domain reduces BER as compared to time or frequency domain.     

Tent-Shaped Surface Morphologies of Silicon: Texturization by Metal Induced Etching

Silicon - Nano-metal/semiconductor junction dependent porosification of silicon has been studied here. The silicon nanostructures (SiNSs) have been textured on n- and p- type silicon wafers using...     

Consideration of primary creep at a stationary crack tip: Implications for the C t parameter

A finite element creep analysis of a center crack specimen has been carried out under small scale to extensive creep conditions. The crack was assumed to be stationary. Several constitutive models were used; these consisted of elastic, power-law creep with and without rate-independent plasticity, as well as one which also included primary creep. The mechanics basis of the C _t parameter, which has been proposed for correlating creep crack growth behavior under conditions ranging from small scale to extensive creep, is explored.For the aforementioned specimen geometry, consideration of primary creep seems to explain the differences between the measured and previously calculated load line deflection rates based on power-law creep only. It is also concluded that in small scale creep, C _t does not characterize the instantaneous crack tip singular stress field, but it accurately characterizes the rate of expansion of the crack tip creep zone regardless of whether primary or secondary creep is occurring. This result provides a rationale for using C _t to correlate creep crack growth rates even in the presence of significant primary creep deformation.

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Résumé On a procédé à une analyse par éléments finis du fluage d'une éprouvette comportant une fissure centrale, sous des conditions allant du fluage à petite échelle jusqu'à un fluage important. On suppose que la fissue est stationaire. Divers modèles ont été utilisés, à savoir la loi de fluage élastique ou parabolique, avec ou sans plasticité indépendante de la vitesse, ainsi qu'une loi incluant également le fluage primaire. On a étudié la base mécanistique du paramètre C _t, proposé pour relier le comportement de la croissance de la fissure de fluage sous des conditions entraînant un fluage depuis une petite échelle jusqu'à une grande échelle.Pour la géométrie citée, les différences entre les vitesses de variation de la courbe de la charge, mesurées et précédemment calculées en se basant sur la seule loi parabolique de fluage, semblent applicables par la prise en considération du fluage primaire. On conclut également que lors de fluage à petite échelle, C _t ne caractérise pas le champ singulier de contraintes instantanées à l'extrémité de la fissure, mais plutôt, et de maniére sûre, la vitesse d'extension de la zone de fluage à l'extrémité de la fissure, qu'il y ait fluage primaire ou fluage secondaire. Ce tésultat fournit une base d'utilisation de C _t pour connaître les vitesses de croissance d'une fissure de fluage, même en présence d'une déformation de fluage primaire significative.

     

Ag2O–Al2O3–ZrO2 Trimetallic Nanocatalyst for High Performance Photodegradation of Nicosulfuron Herbicide

Topics in Catalysis - In the present study, Ag2O–Al2O3–ZrO2 based trimetallic oxide nanocatalyst was designed using simple microwave assisted reduction method. It was characterized...     

Amyloid-β Inspired Short Peptide Amphiphile Facilitates Synthesis of Silver Nanoparticles as Potential Antibacterial Agents

An amyloid-β inspired biocompatible short peptide amphiphile (sPA) molecule was used for controlled and targeted delivery of bioactive silver nanoparticles via transforming sPA nanostructures. Such sPA-AgNPs hybrid structures can be further used to develop antibacterial materials to combat emerging bacterial resistance. Due to the excellent antibacterial activity of silver, the growth of clinically relevant bacteria was inhibited in the presence of AgNPs-sPA hybrids. Bacterial tests demonstrated that the high biocompatibility and low cytotoxicity of the designed sPA allow it to work as a model drug delivery agent. It therefore shows great potential in locally addressing bacterial infections. The results of our study suggest that these nanodevices have the potential to trap and then engage in the facile delivery of their chemical payload at the target site, thereby working as potential delivery materials. This system has potential therapeutic value for the treatment of microbiota triggered progression of neurodegenerative diseases.     

3D word spotting using leap motion sensor

Multimedia Tools and Applications - Leap motion sensor provides a new way of interaction with computers or mobile devices. With this sensor, users can write in air by moving palm or finger, thus,...     

Effect of 100 KeV Ar+ ion beam irradiation on ZnO thin films – Influence of morphology vis-a-vis electrode/electrolyte interface and its impact on photoelectrochemical water splitting

The present study attempts quantitative determination of changes in the morphological surface features viz. fractal dimension, lower and upper cut off length scale through Power Spectral Density analysis prior to and after irradiation of 100 KeV Ar⁺ ion beam at incidence angles of 0°, 40° and 60° on ZnO thin films. All the unirradiated and irradiated samples are subjected to photoelectrochemical characterization and a correlation between photoelectrochemical performance and morphological parameters is established. Sample irradiated at 40° angle at the fluence of 5 × 10¹⁶ ions/cm² is found to possess maximum fractal dimension of 2.72, lower and upper cut off length scale of 3.16 nm and 63.00 nm respectively. This sample exhibits maximum photocurrent density of 3.19 mA/cm² and applied bias photon-to-current efficiency of 1.12% at 1.23 V/RHE. Hydrogen gas collected for duration of 1 h for the same sample was ~4.83 mLcm^?2.     

Experimental investigations on silicon carbide mixed electric discharge machining

Silicon - In this study, silicon carbide mixed electrical discharge machining (SCMEDM) process has been developed and later on modelled also using an artificial neural network (ANN) based technique...     

A new version of AAKF (Reduced Tensor Matrix Elements) adapted to spectroscopic notation

Title of program: REDUCED TENSOR MATRIX ELEMENTS 2 Catalogue number: AAKP Program obtainable from: CPC Program Library, Queen's University of Belfast N. Ireland (see application form in this issue) Computer: Installation: IBM 360/75 University of Waterloo, Waterloo, Ont. Canada Operating system: OS/360 HASP II Programming languages used: FORTRAN IV High speed store required: 102 K bytes No. of bits per byte: 8 Overlay structure: None Other peripherals used: Card reader, line printer No. of cards in combined program and test deck: 1524 Card punching code: EBCDIC 029CPC Library subprograms used:

     

80.

Switching characteristics of an optically controlled GaAs-MESFET   总被引：1，自引：0，他引：1  

Chakrabarti  P. Shrestha  S.K. Srivastava  A. Saxena  D. 《Microwave Theory and Techniques》1994,42(3):365-375

The switching characteristics of an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), popularly known as Optical Field Effect Transistor (OPFET), have been derived analytically. The limitations of the existing model have been overcome in the present model. Calculations are being carried out to examine the effect of illumination on the current-voltage characteristics, drain-to-source capacitance (C_dc), internal gate-to-source capacitance (C_gs), drain-to-source resistance (R_ds), the transconductance (g_m), the input RC time constant and the cutoff frequency (f_T) of a GaAs-MESFET. The variations of these parameters with gate length L_g and the doping concentration N_d have also been studied in dark and illuminated conditions. The results of numerical calculations show that there is an overall decrease in the input RC time constant of the device in the illuminated condition arising from the internal gate-to-source capacitance and the transconductance. The results obtained on the basis of the model show a close agreement with the reported experimental findings. The simple model presented here is fairly accurate and can be used as a basic tool for circuit simulation purposes     

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Cat. numbers	Titles	Refs. in C.P.C.
ACQB	P SHELL CFP	1 (1969) 15
ACRN	A NEW D SHELL CFP	6 (1973) 88
AAGD	NJSYM	1 (1970) 241, 2 (1971) 173
AAGD0001	ADAPT NJSYM FOR WEIGHTS		2 (1971) 180
AAGD0002		ADAPT TO INTEGER ARITHMETIC	5 (1973) 161

Switching characteristics of an optically controlled GaAs-MESFET

The switching characteristics of an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), popularly known as Optical Field Effect Transistor (OPFET), have been derived analytically. The limitations of the existing model have been overcome in the present model. Calculations are being carried out to examine the effect of illumination on the current-voltage characteristics, drain-to-source capacitance (C_dc), internal gate-to-source capacitance (C_gs), drain-to-source resistance (R_ds), the transconductance (g_m), the input RC time constant and the cutoff frequency (f_T) of a GaAs-MESFET. The variations of these parameters with gate length L_g and the doping concentration N_d have also been studied in dark and illuminated conditions. The results of numerical calculations show that there is an overall decrease in the input RC time constant of the device in the illuminated condition arising from the internal gate-to-source capacitance and the transconductance. The results obtained on the basis of the model show a close agreement with the reported experimental findings. The simple model presented here is fairly accurate and can be used as a basic tool for circuit simulation purposes