Effects of electrical stressing in power VDMOSFETs

The effects of gate bias stressing on threshold voltage and mobility in power VDMOSFETs and underlying changes in gate oxide-trapped charge and interface trap densities are presented and analysed in terms of the mechanisms responsible. It is shown that gate bias stressing causes significant threshold voltage shift and mobility degradation in power VDMOSFETs; the negative bias stressing causes more rapid initial changes of both threshold voltage and mobility, but the final threshold voltage shift and mobility reduction are significantly larger in devices stressed by positive gate bias. In the case of positive bias stressing, electron tunnelling from neutral oxide traps associated with trivalent silicon defects into the oxide conduction band is proposed as the main mechanism responsible for positive oxide-trapped charge buildup, while subsequent hole tunnelling from the charged oxide traps to interface-trap precursors Si_s–H is shown to be the dominant mechanism responsible for the interface trap buildup. In the case of negative bias stressing, hole tunnelling from the silicon valence band to oxygen vacancy defects is shown to be responsible for positive oxide-trapped charge buildup, while subsequent electro-chemical reactions of interfacial precursors Si_s–H with the charged oxide traps and H⁺ ions are proposed to be responsible for interface trap buildup.     

Advances in SiC power MOSFET technology

In recent years, SiC has received increased attention because of its potential for a wide variety of high temperature, high power, high frequency, and/or radiation hardened applications under which conventional semiconductors cannot adequately perform. For semiconductor devices designed to operate in these harsh conditions, SiC offers an unmatched combination of electronic and physical properties. The availability of SiC wafers on a commercial basis has led to the demonstration of many types of metal-oxide semiconductor (MOS)-gated devices that exploit its unique properties. To which extent the potential of SiC power MOSFET can be utilized is a question of appropriate SiC polytype, device structure, MOS interface quality and maturity of the technology. This paper reviews the present status of the SiC power MOSFETs technology that is approaching commercialization. Emphasis is placed upon the impact of SiO₂–SiC interface quality on the performance of SiC MOSFETs.     

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随着测井采集技术和测井资料评价技术的飞速发展,测井技术在储量计算中的应用越来越广泛,所起的作用也越来越重要。四川测井公司经过多年的探索与实践,通过开展探井测井精细解释、RFT地层测试技术应用及测井地震结合储层横向预测技术研究,已形成了一套应用测井资料全面、细致分析地层、构造、储层的测井精细解释技术,1997－2000年间,共完成了36口井的探井精细解释工作,取得了可喜的成果,在碳酸盐岩气藏储量计算中发挥了重要作用。     

混凝沉淀—生物法—高级氧化处理颜料废水工程应用

某颜料企业针对其排放的高浓度有机废水,采用混凝沉淀—生物法—高级氧化的组合工艺进行处理。工程实践表明:在系统维持相对稳定的情况下,经处理后的出水水质达到了《污水综合排放标准》(GB 8978—1996)的一级标准要求。     

Ionic Liquid Promoted Efficient and Rapid One-pot Synthesis of Pyran Annulated Heterocyclic Systems

Aluminovanadate oxide, “V–Al–O”, has been studied by X-ray photoelectron spectroscopy (XPS) with the emphasis to reveal chemical modifications as a function of the X-irradiation time. Considerable damage was found for V–Al–O and less so for vanadium pentoxide, V₂O₅, and sapphire, α-Al₂O₃, both serving as reference samples. Modifications in V–Al–O were seen even at low radiation doses. Absolute and relative shifts in binding energies along with changes of peak intensities and widths demonstrate that an appreciable amount of V⁵⁺ is reduced to lower oxidation states. X-ray induced chemical modifications extend at least to the depth sampled by the V3p electrons. It is suggested that the damage is caused by electron-hole pair generation and Auger decay. Al–O–H in V–Al–O is also affected by X-rays. This causes O₂ and water desorption as followed by mass spectrometry of the residual gas.     

Analysis of thorium and its progeny by gamma ray spectrometry and alpha track methods

Samples originating from an EU sponsored intercomparison exercise were analysed by gamma ray spectrometry (a thorium solution sample, a zircon sand sample and a thorium ore sample). An alpha track method was also used to analyse the solution sample. The detection efficiency calibration for the gamma ray spectrometry measurements on the solid samples was established using an in-house standard of thorium nitrate. A GESPECOR Monte Carlo simulation program was utilised in the analysis of the solution sample. The in-house thorium nitrate standard was also used to prepare standards for the alpha track method. The relative differences between the 232Th activity concentration values determined in these intercomparison samples and values supplied by the NPL, UK, were found to be less than 5% when determined by the gamma ray spectrometry method and less than 8% when determined by the alpha track method.     

Influence of graphene nanoplatelet incorporation and dispersion state on thermal,mechanical and electrical properties of biodegradable matrices

Graphene nanoplatelets (GNPs) were used as multifunctional nanofiller to enhance thermal and mechanical properties as well as electrical conductivity of two different biodegradable thermoplastics: poly lactide (PLA) and poly (butylene adipate-co-terephthalate) (PBAT). Morphological investigations showed different levels of GNP dispersion in the two matrices, and consequently physical properties of the two systems exhibited dissimilar behaviours with GNP incorporation. Crystallinity of PLA, determined from differential scanning calorimetry, was observed to increase markedly with addition of GNPs in contrast to the decrease in crystallinity of PBAT. Isothermal and non-isothermal thermogravimetric analyses also revealed a more significant delay in thermal decomposition of PLA upon addition of GNPs compared to that of PBAT. Furthermore, results showed that increasing GNP content of PLA and PBAT nanocomposites influenced their Young’s modulus and electrical conductivity in different ways. Modulus of PBAT increased continuously with increasing GNP loading while that of PLA reached a maximum at 9 wt% GNPs and then decreased. Moreover, despite the higher conductivity of pure PBAT compared to pure PLA, conductivity of PLA/GNP nanocomposites overtook that of PBAT/GNP nanocomposites above a certain GNP concentration. This demonstrated the determining effect of nanoplatelets dispersion state on the matrices properties.     

Decomposition of energetic chemicals contaminated with iron or stainless steel

Contamination of chemicals or reaction mixtures with iron or stainless steel is likely to take place during chemical processing. If energetic and thermally unstable chemicals are involved in a manufacturing process, contamination with iron or stainless steel can impact the decomposition characteristics of these chemicals and, subsequently, the safety of the processes, and should be investigated. The goal of this project was to undertake a systematic approach to study the impact of iron or stainless steel contamination on the decomposition characteristics of different chemical classes. Differential scanning calorimetry (DSC) was used to study the decomposition reaction by testing each chemical pure, and in mixtures with iron and stainless steel. The following classes of energetic chemicals were investigated: nitrobenzenes, tetrazoles, hydrazines, hydroxylamines and oximes, sulfonic acid derivatives and monomers. The following non-energetic groups were investigated for contributing effects: halogens, hydroxyls, amines, amides, nitriles, sulfonic acid esters, carbonyl halides and salts of hydrochloric acid. Based on the results obtained, conclusions were drawn regarding the sensitivity of the decomposition reaction to contamination with iron and stainless steel for the chemical classes listed above. It was demonstrated that the most sensitive classes are hydrazines and hydroxylamines/oximes. Contamination of these chemicals with iron or stainless steel not only destabilizes them, leading to decomposition at significantly lower temperatures, but also sometimes causes increased severity of the decomposition. The sensitivity of nitrobenzenes to contamination with iron or stainless steel depended upon the presence of other contributing groups: the presence of such groups as acid chlorides or chlorine/fluorine significantly increased the effect of contamination on decomposition characteristics of nitrobenzenes. The decomposition of sulfonic acid derivatives and tetrazoles was not impacted by presence of iron or stainless steel.     

Silicon carbide as a material for mainstream electronics

SiC is emerging as the only semiconductor material other than silicon that can have electronically passivated surface to industrial standards. The surface passivation is the main reason for the dominance of silicon technology, but SiC has favorable bulk properties. This combination of factors raises the question whether SiC can play a role in mainstream electronics (integrated-circuit based complex systems). Addressing this question in this paper, it is concluded that SiC integration with silicon wafers is the most likely trigger of an evolutionary chain of investment and development steps, which has the potential to significantly influence future development of mainstream electronics.