Design and development of enhanced bandwidth multi‐frequency slotted antenna for 4G‐LTE/WiMAX/WLAN and S/C/X‐band applications

A multi‐frequency rectangular slot antenna for 4G‐LTE/WiMAX/WLAN and S/C/X‐bands applications is presented. The proposed antenna is comprised of rectangular slot, a pair of E‐shaped stubs, and an inverted T‐shaped stub and excited using staircase feed line. These employed structures help to achieve multiband resonance at four different frequency bands. The proposed multiband slot antenna is simulated, fabricated and tested experimentally. The experimental results show that the antenna resonates at 2.24, 4.2, 5.25, and 9.3 GHz with impedance bandwidth of 640 MHz (2.17‐2.82 GHz) covering WiMAX (802.16e), Space to Earth communications, 4G‐LTE, IEEE 802.11b/g WLAN systems defined for S‐band applications. Also the proposed antenna exhibits bandwidth of 280 MHz (4.1‐4.38 GHz) for Aeronautical and Radio navigation applications, 80 MHz (4.2‐4.28 GHz) for uncoordinated indoor systems,1060 MHz (5.04‐6.1 GHz) for the IEEE 802.11a WLAN system defined for C‐band applications and 2380 MHz (7.9‐10.28 GHz) defined for X‐band applications. Further, the radiation patterns for the designed antenna are measured in anechoic chamber and are found to agree well with simulated results.     

Improving Usability Perception of Error-Prone AI Speakers: Elaborated Feedback Mitigates Negative Consequences of Errors

ABSTRACT

Users of voice user interface (VUI) often encounter errors, such as when a VUI attempts to recognize a user’s voice inputs or execute tasks. Conversation is prone to errors, and in the collaborative perspective, communicators manage common ground together to handle erroneous situations. Adopting a collaborative view of conversation, we propose that a VUI can address different types of errors by providing users with feedback to aid them in developing common ground to communicate more effectively. To test this proposal, we conducted a 2 (error type: recognition vs. execution error) × 2 (feedback elaboration: present vs. absent) mixed-design experiment in which users interacted with a VUI speaker and evaluated its usability in these four modes. Participants reported greater acceptance of feedback and higher usability perception for a speaker returning execution errors than for one returning recognition errors, particularly when the speaker presented feedback articulating reasons for the errors. This finding indicates that a VUI can employ feedback explaining the causes of errors to facilitate the development of common ground and to minimize the negative consequences of errors.     

An explicit closed-form formula for profit-maximizing k-out-of-n systems subject to two kinds of failures

This paper derives and analyzes an explicit closed-form formula for the optimal k in k-out-of-n systems consisting of i.i.d. components. The system can be in one of two possible modes with a pre-specified probability. The components are subject to failure in each of the two modes. The costs of the two kinds of system failures are generally not identical. Since the formula is explicit, it permits a calculation of the optimal k directly in terms of the parameters of the system. In addition, it yields many results concerning both the bounds of the optimal k and the effects of a change in parameters on the optimal k and on the optimized value of the system's expected profit.     

Exact capacitance of a lossless MOS capacitor

First order Ricatti equations are obtained for the capacitive 3-wire transmission line of a one-dimensional MOS capacitance which give an order of magnitude improvement in numerical computation time over the transmission matrix solution of the lumped section equivalent circuit model of the transmission line.     

Profiling interface traps in MOS transistors by the DCcurrent-voltage method

Position profiling the interface trap density along the channel length of metal-oxide-silicon transistors by the Direct-Current Current-Voltage method is illustrated for five density variations: zero, peaked in drain junction space-charge layer, constant in channel, nonconstant in channel, and peaked in drain junction space-charge layer and nonconstant in channel. The interface trap densities were monitored by MOS transistor's d.c. body current and the density profiles were obtained from the body-drain and body-source differential conductance versus drain or source bias voltage. An experimental demonstration is given for a 1.6 μm n-channel Si MOS transistor with about 10¹¹ traps/cm² generated by channel hot electron stress     

Transport in semiconductors with low scattering rate and at high frequencies

A rigorous derivation of the hydrodynamic carrier transport equations is obtained by extending the moment method to include the moment equation of the collision free path which contains both the scattering and the generation-recombination-trapping-tunneling events. This leads to an electron (or hole) current equation with a new inductive term $\text{τ}\text{j}{}_{\mathrm{<mtext>N</mtext>}}\text{/?t}$ which becomes important when the signal frequency becomes comparable with the reciprocal average collision relaxation time, $\text{τ}$^?1, and which adds a collision delay inductance to the conduction current lines of the circuit model.     

Mariposa: a wide-area distributed database system

The requirements of wide-area distributed database systems differ dramatically from those of local-area network systems. In a wide-area network (WAN) configuration, individual sites usually report to different system administrators, have different access and charging algorithms, install site-specific data type extensions, and have different constraints on servicing remote requests. Typical of the last point are production transaction environments, which are fully engaged during normal business hours, and cannot take on additional load. Finally, there may be many sites participating in a WAN distributed DBMS. In this world, a single program performing global query optimization using a cost-based optimizer will not work well. Cost-based optimization does not respond well to site-specific type extension, access constraints, charging algorithms, and time-of-day constraints. Furthermore, traditional cost-based distributed optimizers do not scale well to a large number of possible processing sites. Since traditional distributed DBMSs have all used cost-based optimizers, they are not appropriate in a WAN environment, and a new architecture is required. We have proposed and implemented an economic paradigm as the solution to these issues in a new distributed DBMS called Mariposa. In this paper, we present the architecture and implementation of Mariposa and discuss early feedback on its operating characteristics. Edited by Henry F. Korth and Amith Sheth. Received November 1994 / Revised June 1995 / Accepted September 14, 1995     

Origin of Interface States and Oxide Charges Generated by Ionizing Radiation

The randomly located trivalent silicon atoms are shown to account for the thermally generated interface states at the SiO2-Si interface. The interface state density is greatly reduced in water containing ambients at low temperatures (450°C) by forming trivalent silicon hydroxide bonds. Interface states are regenerated when the ?Si-OH bonds are broken by ionizing radiation and the OH ions are drifted away. In the bulk of the oxide film, the trivalent silicon and the interstitial oxygen donor centers are shown to be responsible for the heat and radiation generated positive space charge build-up (oxide charge) in thermally grown silicon oxide.