双极场引晶体管:II.飘移扩散理论（双MOS栅纯基）

本文描述双极场引晶体管(BiFET)飘移扩散理论，包括薄纯基上两个等同金属氧化物硅（MOS）栅.把两维晶体管分解成两个一维晶体管，以表面势为参变量，得到解析方程.提供实用硅基和氧化层厚度范围内,随直流电压变化,输出和转移电流和电导总量和飘移扩散分量.显著部分的飘移电流来自横向电场平方的纵向梯度.     

Tyrosine kinase and c-Jun NH2-terminal kinase mediate hypertrophic responses to prostaglandin F2alpha in cultured neonatal rat ventricular myocytes

RMP-7 is a bradykinin B2 receptor agonist shown to permeabilize the blood-brain barrier, especially that associated with brain tumors, when administered via both intracarotid and intravenous routes. Both routes of administration are currently being tested in human trials in combination with the chemotherapeutic agent carboplatin as therapy for gliomas. As an essential prerequisite to the initial intracarotid clinical trials, the potential neurotoxicity of intra-arterial administration of RMP-7 (at a high or low dose), alone and in combination with carboplatin, was assessed in anesthetized Red Duroc swine. Five treatment groups were evaluated with each pig receiving a series of alternating, intra-arterial infusions of RMP-7 (or saline) followed by carboplatin (or saline), as follows: (1) vehicle control: saline/saline; (2) carboplatin only control: saline/carboplatin (50 mg total); (3) RMP-7 only control: RMP-7 (750 ng/kg)/saline; (4) low dose combination: RMP-7 (75 ng/kg)/carboplatin (50 mg total); and (5) high dose combination: RMP-7 (750 ng/kg)/carboplatin (50 mg total). For each subject, one of the alternating dosing sequences (above) was repeated four times during a single dosing session which lasted approximately 40 minutes. Assessments during the in-life phase of the study in the pre- and post-treatment periods consisted of heart rate, arterial blood pressure (systolic, diastolic, and mean), blood gases, body weight, general clinical observations (including evaluation for neurological deficit) and clinical pathology (including a comprehensive battery of standard blood coagulation, hematological and serum chemistry tests). In addition, during the time of treatment, heart rate and arterial blood pressure were monitored. The animals were terminated two weeks after dosing and the brain and rete mirabile (distal to site of infusion) were evaluated for gross and histopathological abnormalities. The histopathology analysis included a reader-blinded analysis using low and high power light microscopic examination of both H&E and Kluver-Berrera stained sections through several key cortical and subcortical brain regions. Transient decreases in arterial blood pressure (mean of 10-25 mmHg) were observed in both groups receiving the high dose of RMP-7 (i.e., 750 ng/kg). No other side effects attributable to RMP-7 and/or carboplatin were observed, and clinical observations revealed no evidence of neurologic deficits. Post-mortem examination revealed no evidence of CNS or cerebral vascular pathology attributable to carboplatin and RMP-7. This study demonstrates that intracarotid administration of the maximum tolerated dose of RMP-7 (750 ng/kg) alone, or in combination with carboplatin (50 mg) is not accompanied by any serious adverse effect, apparent cerebrovascular abnormality or neuropathologic consequence and offers further evidence for the safety of this novel therapeutic approach for enhancing delivery of chemotherapeutics to brain tumors.     

Reduction of solar cell efficiency by edge defects across the back-surface-field junction:— A developed perimeter model

Material imperfections, impurity clusters and fabrication defects across the back-surface-field junction can degrade the performance of high-efficiency solar cells. The degradation from defects appearing on the circumference of a solar cell is analyzed using a two-region developed perimeter device model. The width of the defective perimeter region is characterized by the range or the distance-of-influence of the defective edge and this width is about two diffusion lengths. The defective edge is characterized by a surface recombination velocity. Family of theoretical curves and numerical examples are presented to show that significant reduction of open-circuit voltage can occur in high-efficiency cells which are thin compared with the diffusion length. In one example, the degradation is decreased from 135 mV to 75 mV when the cell size is increased from 10 to 100 times the diffusion length in a thin cell whose thickness is 1% of the diffusion length.     

Application of the transmission line equivalent circuit model to the analysis of the PN junction admittance under d.c. bias

Exact non-equilibrium one-energy-level numerical solutions of the admittance of a p+n junction are obtained from the nonuniform transmission line equivalent circuit model. Capacitance and conductance curves for equilibrium and reverse-biased gold-doped silicon diode are calculated using experimental values of emission and capture rates. Comparisons between theoretical and experimental frequency dependences of the admittance using new experimental capture rates show good agreements over a wide range of reverse bias.     

Series equivalent circuit representation of SiO2Si interface and oxide trap states

The small-signal frequency response of silicon dioxide-silicon interface and oxide trap states has been investigated and interpreted using a series R-C equivalent circuit model instead of the commonly used parallel R-C equivalent circuit model. It is shown that the series equivalent circuit model is advantageous in extracting the time constants of the oxide traps located in the silicon dioxide layer from experimental data and allows a determination of the spatial extension of the oxide traps. Comparisons of a two-step model, consisting of the Shockley-Read-Hall transition between the band and the interface states and the elastic tunneling transition between the interface and oxide trap states, with experimental data are given to illustrate the range of experimental data required to evaluate an unique set of tunneling and SRH parameters.     

Optical properties of an isotrophic optically active medium at oblique incidence

The optical properties of an isotropic optically active medium at oblique incidence have been investigated. It was found that the amount of transmitted light converted from p polarization to s polarization and vice versa, through an isotropic optically active medium, is independent of the state of incident polarization. Though the optical rotation through the optically active medium is same for p and s polarization at normal incidence, it becomes different at oblique incidences.     

Low frequency conductance voltage analysis of Si/GexSi1-x/Si heterojunction bipolar transistors

Low-frequency-conductance-voltage (LFGV) method for analysis of heterojunction bipolar transistors (HBTs) is presented. The method gives accurate quantitative values for the important minority-carrier transport parameters that underlie the transistor performance, such as the base diffusion length, lifetime, diffusion coefficient and transit time. The method also allows a detailed analysis of the current gain and emitter injection efficiency. The analytical model and experimental methodology are demonstrated for a Si/Ge_xSi_1-x/Si HBT with a trapeziodal and linearly graded Ge profiles in the base. The LFGV method is general and can be applied to other bipolar transistors, including those based on III-V materials     

MOS Capacitance-Voltage Characteristics Ⅲ.Trapping Capacitance from 2-Charge-State Impurities

Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier,or one-energy-level impurity species.Models described include a donor electron trap and an acceptor hole trap,both donors,both acceptors,both shallow energy levels,both deep,one shallow and one deep,and the identical donor and acceptor.Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.     

Computer-aided study of steady-state carrier lifetimes under arbitrary injection conditions

The steady-state minority and majority carrier lifetimes are calculated using an exact steady-state equivalent circuit model. The exact majority and minority carrier lifetimes are calculated as functions of position in a diffused silicon P/N junction diode doped with zinc, and as functions of bias voltage or injection level. Factors which affect carrier lifetimes are pointed out and illustrated. Lifetimes due to the presence of multiple energy level Shockley-Read-Hall centers are also discussed. The exact carrier lifetimes at very low and very high injection levels computed from this model agree well with those calculated from the analytical expressions derived by Shockley and Read.