Ambient‐light sensor system with wide dynamic range enhanced by adaptive sensitivity control

Abstract— A new digital ambient‐light sensor system is presented which employs two linear light sensors with different sensitivities and automatically adjusts the sensitivity based on the illumination condition. The adaptation mechanism allows a very wide range of light intensity to be detected, and the input dynamic range of the system is substantially improved from 22.5 to 45.1 dB. The proposed method does not require any additional precision bits for output data. Due to the small number of the output bits and the simple conversion process, the system can be easily integrated on the display panel.     

Touch‐screen panel integrated into 12.1‐in. a‐Si:H TFT‐LCD

Abstract— A touch‐screen‐panel (TSP) embedded 12.1‐in. LCD employing a standard existing a‐Si:H TFT‐LCD process has been successfully developed. Compared with conventional external touch‐screen panels, which use additional components to detect touch events, the new internal TSP exhibits a clearer image and improved touch feeling, as well as increased sensing speed using discrete sensing lines to enable higher‐speed sensing functions including handwriting. The new internal digital switching TSP can be fabricated with low cost because it does not require any additional process steps compared to a standard a‐Si:H TFT‐LCD.     

Fractal and topological characterization of branching patterns on the fracture surface of cross-linked dimethacrylate resins

The branching patterns formed as a result of crack growth in dimethacrylate resins below their glass transition temperatures looked similar to fractal trees. The skeletons of the patterns were analysed numerically for their topological and geometrical properties. The number of branches, N _i , mean branch lengths, N _i , and branch angles of a particular order, defined according to the Strahler and inverted Weibel schemes, followed exponential scaling behaviour: N _i (R _b )^–i and L _i (R _l ) ⁱ . Using the relationship for the fractal dimension D=In R _B /In R _L , a value of D=1.4 was obtained for the fracture pattern. Fractal behaviour was also examined by the box-counting method which indicated a power-law dependence of the mass on the box size with fractal dimension exponent D=1.4 in the case of the fracture pattern. However, the mass-shell method for both the fracture pattern and the fractal trees gave an exponential increase of mass with distance from the origin, rather than the power-law behaviour expected for fractals. This was attributed to the fact that branches of different sizes were distributed in restricted regions of space closer to the periphery, rather than uniformly over the whole pattern.     

A Novel and Facile Route to Synthesize Atomic‐Layered MoS2 Film for Large‐Area Electronics

High‐quality and large‐area molybdenum disulfide (MoS₂) thin film is highly desirable for applications in large‐area electronics. However, there remains a challenge in attaining MoS₂ film of reasonable crystallinity due to the absence of appropriate choice and control of precursors, as well as choice of suitable growth substrates. Herein, a novel and facile route is reported for synthesizing few‐layered MoS₂ film with new precursors via chemical vapor deposition. Prior to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is spun onto the growth substrate and dimethyl disulfide as the liquid sulfur precursor is supplied with a bubbling system during growth. To supplement the limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by dissolving molybdenum hexacarbonyl (Mo(CO)₆) in the liquid sulfur precursor delivered by the bubbler. By precisely controlling the amounts of precursors and hydrogen flow, full coverage of MoS₂ film is readily achievable in 20 min. Large‐area MoS₂ field effect transistors (FETs) fabricated with a conventional photolithography have a carrier mobility as high as 18.9 cm² V^?1 s^?1, which is the highest reported for bottom‐gated MoS₂‐FETs fabricated via photolithography with an on/off ratio of ≈10⁵ at room temperature.     

Erratum to: Charge transfer in graphene/polymer interfaces for CO2 detection

Nano Research - The order of the authors in the original version of this article was unfortunately incorrect on the first page and the first page of the ESM. Instead of Myungwoo Son1, Yusin Pak1,...     

Applying Job Shop Scheduling to SMEs Manufacturing Platform to Revitalize B2B Relationship

A small and medium enterprises (SMEs) manufacturing platform aims to perform as a significant revenue to SMEs and vendors by providing scheduling and monitoring capabilities. The optimal job shop scheduling is generated by utilizing the scheduling system of the platform, and a minimum production time, i.e., makespan decides whether the scheduling is optimal or not. This scheduling result allows manufacturers to achieve high productivity, energy savings, and customer satisfaction. Manufacturing in Industry 4.0 requires dynamic, uncertain, complex production environments, and customer-centered services. This paper proposes a novel method for solving the difficulties of the SMEs manufacturing by applying and implementing the job shop scheduling system on a SMEs manufacturing platform. The primary purpose of the SMEs manufacturing platform is to improve the B2B relationship between manufacturing companies and vendors. The platform also serves qualified and satisfactory production opportunities for buyers and producers by meeting two key factors: early delivery date and fulfillment of processing as many orders as possible. The genetic algorithm (GA)-based scheduling method results indicated that the proposed platform enables SME manufacturers to obtain optimized schedules by solving the job shop scheduling problem (JSSP) by comparing with the real-world data from a textile weaving factory in South Korea. The proposed platform will provide producers with an optimal production schedule, introduce new producers to buyers, and eventually foster relationships and mutual economic interests.