CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-/spl mu/m VCSELs grown by MOCVD

We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-/spl mu/m vertical-cavity surface-emitting laser operating continuous wave up to 35/spl deg/C. The structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In/sub 0.4/Al/sub 0.6/As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.     

A physics-based GaAs PHEMT noise model for low drain bias operation using characteristic potential method

A new physics-based noise model of a GaAs PHEMT is developed using the characteristic potential method (CPM). The model calculates the intrinsic noise current sources using CPM. Combined with the extrinsic noise parameters extracted from the measured S-parameters, the model reproduces four noise parameters of the device accurately under low drain bias voltages without using any fitting parameters. The model is verified with a 0.2-/spl mu/m GaAs PHEMT and shows excellent agreement with the measurements for all the noise parameters up to a drain voltage of 1 V Also, the proposed method allows the simulation of the microscopic noise distribution and thus allows one to obtain a physical understanding of noise mechanisms inside the device.     

A simple and analytical parameter-extraction method of a microwaveMOSFET

A simple and accurate parameter-extraction method of a high-frequency small-signal MOSFET model including the substrate-related parameters and nonreciprocal capacitors is proposed. Direct extraction of each parameter using a linear regression approach is performed by Y-parameter analysis on the proposed equivalent circuit of the MOSFET for high-frequency operation. The extracted results are physically meaningful and good agreement has been obtained between the simulation results of the equivalent circuit and measured data without any optimization. Also, the extracted parameters, such as g_m and g_ds, match very well with those obtained by DC measurement     

Switched‐Capacitor Variable Gain Amplifier with Operational Amplifier Preset Technique

We present a novel operational amplifier preset technique for a switched‐capacitor circuit to reduce the acquisition time by improving the slewing. The acquisition time of a variable gain amplifier (VGA) using the proposed technique is reduced by 30% compared with a conventional one; therefore, the power consumption of the VGA is decreased. For additional power reduction, a programmable capacitor array scheme is used in the VGA. In the 0.13 μm CMOS process, the VGA, which consists of three‐stages, occupies 0.33 mm² and dissipates 19.2 mW at 60 MHz with a supply voltage of 1.2 V. The gain range is 36.03 dB, which is controlled by a 10‐bit control word with a gain error of ±0.68 LSB.     

Phase-separated polydimethylsiloxane as a dielectric surface treatment layer for organic field effect transistors

We suggest a novel method for treating the surfaces of dielectric layers in organic field effect transistors (OFETs). In this method, a blend of poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) and dimethylsiloxane (DMS) with a curing agent is spin coated onto the surface of a dielectric substrate, silicon oxide (SiO₂), and then thermally cured. X-ray photoelectron spectroscopy, contact angle measurements, and morphology analysis were used to show that the hydrophilic DMS layer is preferentially adsorbed on the SiO₂ substrate during the spin coating process. After thermal curing, the bottom DMS layer becomes a hydrophobic PDMS layer. This bottom PDMS layer becomes thinner during curing due to the upward motion of the hydrophobic PDMS molecules. The FET mobility of the cured system was 10^?2 cm²/Vs, which is similar to that of polymeric semiconductors on octadecyltrichlorosilane treated SiO₂ dielectric layers. We also discuss the possibility of using this blend method to increase the air-stability of polymeric semiconductors.     

Functionally Antagonistic Hybrid Electrode with Hollow Tubular Graphene Mesh and Nitrogen‐Doped Crumpled Graphene for High‐Performance Ionic Soft Actuators

Ionic soft actuators, which exhibit large mechanical deformations under low electrical stimuli, are attracting attention in recent years with the advent of soft and wearable electronics. However, a key challenge for making high‐performance ionic soft actuators with large bending deformation and fast actuation speed is to develop a stretchable and flexible electrode having high electrical conductivity and electrochemical capacitance. Here, a functionally antagonistic hybrid electrode with hollow tubular graphene meshes and nitrogen‐doped crumpled graphene is newly reported for superior ionic soft actuators. Three‐dimensional network of hollow tubular graphene mesh provides high electrical conductivity and mechanically resilient functionality on whole electrode domain. On the contrary, nitrogen‐doped wrinkled graphene supplies ultrahigh capacitance and stretchability, which are indispensably required for improving electrochemical activity in ionic soft actuators. Present results show that the functionally antagonistic hybrid electrode greatly enhances the actuation performances of ionic soft actuators, resulting in much larger bending deformation up to 620%, ten times faster rise time and much lower phase delay in a broad range of input frequencies. This outstanding enhancement mostly attributes to exceptional properties and synergistic effects between hollow tubular graphene mesh and nitrogen‐doped crumpled graphene, which have functionally antagonistic roles in charge transfer and charge injection, respectively.     

A fully integrated switched-capacitor DC–DC converter with hybrid output regulation

In this paper, we propose a fully integrated switched-capacitor (SC) DC–DC converter with hybrid output regulation that allows a predictable switching noise spectrum. The proposed hybrid output regulation method is based on the digital capacitance modulation for fine regulation and the automatic frequency scaling for coarse regulation. The automatic frequency scaler and on-chip current sensor are implemented to adjust the switching frequency at one of the frequencies generated by a binary frequency divider with change in load current. Thus, the switching noise spectrum of the proposed SC DC–DC converter can be predicted over the entire load range. In addition, the bottom-plate losses due to the parasitic capacitances of the flying capacitors and the gate-drive losses due to the gate capacitances of switches are reduced at light load condition since the switching frequency is automatically adjusted. The proposed SC DC–DC converter was implemented in a 0.13 µm CMOS process with 1.5 V devices, and its measurement results show that the peak efficiency and the efficiency at light load condition are 69.2% and higher than 45%, respectively, while maintaining a predictable switching noise spectrum.     

Monolithic distributed amplifier with active control schemes for optimum gain and group-delay flatness, bandwidth, and stability

In this paper, active control schemes are presented to optimize the performance of the distributed amplifier (DA) subject to the process variation. A detailed analysis of the DA with mismatched termination loads has been performed, which reveals that pronounced gain and group-delay ripple arises at the low-frequency end from the reflected waves in the artificial transmission line. To solve this problem, an active variable resistor is proposed as the gate-line termination load. The gain and stability of the cascode DA has also been analyzed, which identifies the most critical component determining the tradeoff between the gain-bandwidth product (GBP) and the stability to be the gate feedback resistor of common-gate field-effect transistor. It is also replaced with the active resistor to maximize GBP, while avoiding oscillations. A nine-section cascode DA with active control features is designed and fabricated using commercial GaAs pseudomorphic high electron-mobility transistor foundry. The measurement shows that the gain and group-delay ripple can be minimized, and GBP can be maximized without oscillations by the active bias controls. Active control schemes allow the monolithic DAs to be fine tuned after the fabrication and, thus, can be a robust DA design methodology against process variation and inaccurate device models.     

Chiroptical‐Conjugated Polymer/Chiral Small Molecule Hybrid Thin Films for Circularly Polarized Light‐Detecting Heterojunction Devices

Herein, a simple and facile strategy is described to obtain chiroptically active semiconductor thin films by blending of poly(3‐alkylthiophene)s, which are conventional achiral polymer semiconductors, and 1,1′‐binaphthyl (BN), a versatile chiral molecule. As expected, the intermolecular interaction between the two materials is important to extend the chirality of the binaphthyl molecules to the hybrid films. The controlled phase separation and crystallization of poly[3‐(6‐carboxyhexyl)thiophene‐2,5‐diyl] (P3CT) and binaphthyl hybrid films result in unique heterojunction bilayer thin‐film structures that consisted of BN microcrystals at the top and a P3CT/BN mixed layer at the bottom. Such heterojunction bilayer films exhibit significantly amplified chiroptical response with weak broadened tails, which is due to the enhanced crystallization of the chiral BN molecules and formation of heteroaggregates in the hybrid films. Based on the characterization of crystalline structure and photoluminescence analysis, it is found that new electronic energy states are formed in the conduction band region of P3CTs in the P3CT/BN heteroaggregates, which contribute to chirality transfer from BN to the hybrid films. As a proof of concept, a photodiode capable of distinguishably sensing the left‐ and right‐handed circularly polarized light is successfully fabricated by using the hybrid films with the heterojunction bilayer structure.     

A Multiscale-Porous Anion Exchange Membrane for Convenient and Scalable Electrokinetic Concentration of Cationic Species

A device able to electrokinetically concentrate cationic samples has many potential medical and industrial applications, but until now has remained undeveloped due to the lack of a commercial anion-permselective material leading to a prohibitively complex fabrication procedure. Herein, a novel multiscale-porous anion exchange membrane (MP-AEM) that enables the convenient and scalable electrokinetic concentration of cationic species is proposed. A mechanically enhanced multiscale-porous structure with a solid framework is realized by adopting polyester resin as an additive to overcome the intrinsic limitations of the AEM material. The scalable MP-AEM-embedded electrokinetic concentrator is devised based on the peculiar properties of the MP-AEM that for allow both ion and fluid transport. With the MP-AEM, the concentrator is fabricated in a highly streamlined manner consisting only of a simple insertion and assembly. The concentration performance of the MP-AEM-embedded electrokinetic concentrator is demonstrated with a positively charged fluorescent dye and a fluorescein-labeled protein, and the results show enrichment factors of 250 and 500, respectively. The MP-AEM makes cationic electrokinetic concentration more accessible and scalable, thereby enabling further progress in a wide range of fields.