Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

A Unified Approach to Submicron DC MOS Transistor Modeling for Low-Voltage ICs

A unified single-equation approach for the MOS transistordrain current modeling for energy-efficient submicron MOS circuitsis presented. Instead of three sets of separate equations forthe triode, saturation, and weak inversion regions, only a continuousexpression which is valid to describe the behavior of drain currentand the derivatives in all operation regions can be realizedby using a combination of hyperbola, sigmoid, and interpolationmethods. The model expression can predict accurate results forthe current, output conductance, and transconductance with continuousand smooth characteristics. The simulation results agree wellwith experimental data.     

Fuel choice and aggregate energy demand in the residential and commercial sectors

The energy demand response of the residential and commercial sectors to fuel price changes is of increasing importance to public policy makers. In this paper, the demands for energy in both sectors are examined separately using a refined data base. For each sector, a multinomial logit formulation is utilized, along with an aggregate demand equation to determine analytically short- and long-run fuel price elasticities of demand for the major fuels consumed. It is found that increases in energy prices have a greater effect on energy demand in the commercial sector. Furthermore, in both sectors, raising electricity prices has a greater effect for conserving energy (both end-use and primary) than do equal price rises for natural gas or heating oils.     

Ionoluminescence decay measured with single ions

A new ion beam analysis-based, single ion technique called the time to first photon has been developed to measure the decay of the luminescence signal of phosphors. Such measurements are currently needed to study luminescence decay mechanisms following high-density excitations and to identify strongly luminescent phosphor coatings with short lifetimes for ion photon emission microscopy (IPEM). The samples for this technique consist of thin phosphor layers placed or coated on the surface of PIN diodes. Single ions from an accelerator strike this sample and simultaneously create ion beam induced luminescence (IBIL) from the phosphor that is measured by a single-photon-detector, and an ion beam induced charge collection (IBICC) signal in the PIN diode. In this case, the IBICC signal provides the start pulse and the IBIL signal the stop pulse to a time to amplitude converter. It is straightforward to show that this approach also measures a signal proportional to activity versus time with an accuracy of 5% as long as the number of detected photons per ion is less than 0.1, which usually requires the use of absorbers for the IBIL detector or electronic discrimination for the IBIL signals. Details of the new analysis are given together with examples of luminescence decay measurements of several ceramic phosphors being considered to coat IPEM samples. IPEM is currently being developed at Sandia National Laboratory (SNL), the University of North Texas in Denton, and the Universities and INFN of Padova and Torino.     

在逆境中奋进的蓝牙技术

行业分析人士曾预测,蓝牙半导体市场会在2000年下半年开始攀升,而在2001年将持续攀升.尽管这些预测未达到期待的水平,但普遍地持乐观的态度,蓝牙技术有吸引力的市场仍在向我们召唤.对这一变幻无常的市场,很多半导体供应商趁修改和更新标准之际,纷纷改变了蓝牙产品研发计划.     

Microwave cavity perturbation technique: Part I: Principles

This report reviews the analysis used to extract the complex conductivity of a compound from a microwave cavity perturbation measurement. We intend to present a generalized treatment valid for any spheroidally shaped sample of arbitrary conductivity which is placed at either the electric or magnetic field antinode of the cavity. To begin with, we establish the relationship between the measured parameters and the conductivity for a spherical sample. Next, we extend these results to the case of spheroids; and for the first time, we cover all different configurations that one can possibly use to study an arbitrary conducting sample inside a cavity: in particular, all possible orientations of the sample with respect to the applied field are solved.     

LDMOS射频晶体管满足2.5G和3G蜂窝基站的新挑战

运行在869MHz-2.17GHz频段内的蜂窝无线基站是射频功率晶体替如今最大的市场。其中，基中硅的LDMOS器件被广泛使用于500MHz=2.5GHz之间的射频功率放大器应用当中。作为增强模式的N沟道MOSFET，LDMOS器件(LD代表侧面扩散，描述了器件的沟道结构)专门被设计成为具有高的工作电压(长沟道）和低寄生电容，从而能在高频下工作。在早     

Detecting memory impairment with a modified test procedure: Manipulating retention interval with centrally presented event items.

Suggests that detecting memory impairment with the modified test relies on long retention intervals that provide the necessary forgetting of event information for impairing effects of postevent misinformation to occur. 288 Ss were tested in 4 experiments that presented event items centrally, introduced verbal postevent items to a misled condition, and used the modified test, but differed by using either short (15 min) or long (5–7 days) retention intervals. As evidenced by poorer misled than control test performances, memory impairment only occurred with long retention intervals. Retrieval- and storage-based versions of memory-impairment hypotheses are assessed. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

On the nature of self-monitoring: Matters of assessment, matters of validity.

Notes that an extensive network of empirical relations has been identified in research on the psychological construct of self-monitoring. Nevertheless, in recent years some concerns have been expressed about the instrument used for the assessment of self-monitoring propensities, the Self-Monitoring Scale (SMS) developed by the 1st author (see record 1975-03047-001). Both the extent to which the SMS taps an interpretable and meaningful causal variable and the extent to which the self-monitoring construct provides an appropriate theoretical understanding of this causal variable have been questioned. An examination of reanalyses of studies of self-monitoring, analyses of the internal structure of the SMS, and further relevant data suggests that the measure does tap a meaningful and interpretable causal variable with pervasive influences on social behavior, a variable reflected as a general self-monitoring factor. The evaluation and furthering of the interpretation of this latent causal variable are discussed, criteria for evaluating alternative measures of self-monitoring are offered, and a new 18-item SMS is presented. (88 ref) (PsycINFO Database Record (c) 2010 APA, all rights reserved)