动态聚焦电子枪的模拟与实验研究

动态聚焦技术是为了满足大屏幕高分辨率彩色显像管及高分辨率彩色显示管的发展需求而产生的一项新技术。在本文中，作者首先提出了一种动态聚焦电子枪结构，进行了数值计算与分析，制作了动态聚焦电子枪并装管实验。通过对实验样管的测试与分析。证实该枪性能良好，动态聚集效果明显。     

Assessment of underground cable ratings based on distributed temperature sensing

Numerous power utilities have installed advanced distributed temperature sensing (DTS) systems to measure the temperature of underground cables. This paper presents a general procedure for real-time assessment of underground cable ratings based on DTS. After the identification and location of hot spots on a cable, the cable installation data, load, and DTS-recorded temperature over a period of time are used to estimate soil thermal parameters and assess cable ratings under normal and overloading conditions. In order to accurately estimate soil thermal parameters, a combined technique of the finite-element method and gradient-based optimization is used. The technique was validated in the laboratory and applied to a rating assessment of a 230-kV/500-MVA cable circuit. The assessed continuous and emergency ratings are helpful in improving the operation of this circuit.     

Measurement of serum levels of exogenously administered FSH and LH during ovulation induction therapy

The available surgical and non-surgical therapy options for treatment of gallstone disease are presented. Conventional cholecystectomy is regarded as standard therapy of symptomatic cholecystolithiasis. Other modes of therapy may be indicated under certain circumstances, depending on the results of imaging procedures. In this context conventional X-ray examination, oral and intravenous cholecystography, sonography, computed tomography, endoscopic retrograde cholangiography/cholecystography, and magnetic resonance imaging are discussed and their influence on therapeutic decisions is explained.     

InGaN/GaN MQW p–n junction photodetectors

InGaN/GaN multiquantum well (MQW) p–n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p–n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 10⁵ when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p–n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.     

Global self-ratings of health and mortality: hazard in the North Carolina Piedmont

We analyzed the first 5 years of surveillance data from the Established Population for the Epidemiologic Studies of the Elderly (EPESE) in the Piedmont of North Carolina (n = 4162) to estimate the effect of a global self-rating of health on survival. Covariates used in Cox proportional hazard models included sociodemographic factors, chronic medical conditions, activities of daily living, use of health services, health risk behaviors, cognitive function, affective mood, and negative life events. Adjusted risk of mortality associated with poor (compared to excellent) self-ratings of health was significantly elevated among urban men only. Confounders of the association between survival and overall health assessment varied widely by subgroup. Pooled estimates from heterogeneous populations may mask significant subgroup differences both in the pattern of variables that mediate crude risk and also in the magnitude of residual risk of global self-ratings of health.     

Measurement and modeling of self-heating in SOI nMOSFET's

Self-heating in SOI nMOSFET's is measured and modeled. Temperature rises in excess of 100 K are observed for SOI devices under static operating conditions. The measured temperature rise agrees well with the predictions of an analytical model and is a function of the silicon thickness, buried oxide thickness, and channel-metal contact separation. Under dynamic circuit conditions, the channel temperatures are much lower than predicted from the static power dissipation. This work provides the foundation for the extraction of device modeling parameters for dynamic operation (at constant temperature) from static device characterization data (where temperature varies widely). Self-heating does not greatly reduce the electromigration reliability of SOI circuits, but might influence SOI device design, e.g., requiring a thinner buried oxide layer for particular applications and scaled geometries     

Finite-difference analysis of dielectric-loaded cavities using thesimultaneous iteration of the power method with the Chebyshevacceleration technique

A numerical procedure using the finite-difference technique, simultaneous iteration based on the power method, and the Chebyshev-polynomial preconditioning is proposed to analyze dielectric-loaded cavities. The merit of this method is that no matrix inversions are invoked and the convergence rate of the power method is greatly accelerated by the preconditioning. The TE, TM, and hybrid modes in axisymmetrical cavities loaded with a rod or ring dielectric resonator are analyzed. For the hybrid modes, an H_r-H_z formulation is proposed. Accurate numerical results are obtained efficiently and no spurious solutions are found by the present method     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied     

A PET study of the neural systems of stuttering

The cause of stuttering is unknown. Failure to develop left-hemispheric dominance for speech is a long-standing theory although others implicated the motor system more broadly, often postulating hyperactivity of the right (language nondominant) cerebral hemisphere. As knowledge of motor circuitry has advanced, theories of stuttering have become more anatomically specific, postulating hyperactivity of premotor cortex, either directly or through connectivity with the thalamus and basal ganglia. Alternative theories target the auditory and speech production systems. By contrasting stuttering with fluent speech using positron emission tomography combined with chorus reading to induce fluency, we found support for each of these hypotheses. Stuttering induced widespread overactivations of the motor system in both cerebrum and cerebellum, with right cerebral dominance. Stuttered reading lacked left-lateralized activations of the auditory system, which are thought to support the self-monitoring of speech, and selectively deactivated a frontal-temporal system implicated in speech production. Induced fluency decreased or eliminated the overactivity in most motor areas, and largely reversed the auditory-system underactivations and the deactivation of the speech production system. Thus stuttering is a disorder affecting the multiple neural systems used for speaking.