Electronic `how things work' articles: two early prototypes

The electronic encyclopedia exploratorium (E³) is a vision of a future computer system-an electronic book describing how thing work. Typical articles in E³ will describe such mechanisms as compression refrigerators, engines, telescopes, and mechanical linkages. Each article will provide simulations, three-dimensional animated graphics that the user can manipulate, laboratory areas that allow a user to modify the device or experiment with related artifacts, and a facility for asking questions and receiving customized, computer-generated English-language explanations. Some of the foundational technology is discussed, focusing on topics in artificial intelligence, graphics, and user interfaces. The initial prototype system and the technical lessons learned from it, as well as the second prototype currently under construction, are described     

Spatial retardation of carrier heating in scaled 0.1-μmn-MOSFET's using Monte Carlo simulations

A comprehensive Monte Carlo simulator is employed to investigate nonlocal carrier transport in 0.1 μm n-MOSFET's under low-voltage stress. Specifically, the role of electron-electron (e-e) interactions on hot electron injection is explored for two emerging device designs biased at a drain voltage V_d considerably less than the Si/SiO₂ injection barrier height φ_b. Simulation of both devices reveal that 1) although qV_d<φ_b, carriers can obtain energies greater than φ_b, and 2) the peak for electron injection is displaced approximately 20 nm beyond the peak in the parallel channel electric field. These phenomena constitute a spatial retardation of carrier heating that is strongly influenced by e-e interactions near the drain edge. (Virtually no injection is observed in our simulations when e-e scattering is not considered.) Simulations also show that an aggressive design based on larger dopant atoms, steeper doping gradients, and a self-aligned junction counter-doping process produces a higher peak in the channel electric field, a hotter carrier energy distribution, and a greater total electron injection rate into the oxide when compared to a more conventionally-doped design. The impact of spatially retarded carrier heating on hot-electron-induced device degradation is further examined by coupling an interface state distribution obtained from Monte Carlo simulations with a drift-diffusion simulator. Because of retarded carrier heating, the interface states are mainly generated further over the drain region where interface charge produces minimal degradation. Thus, surprisingly, both 0.1 μm n-MOSFET designs exhibit comparable drain current degradation rates     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

多目标模糊全局优化设计方法和软件

分析了优化设计在土木工程中应用不够广泛的原因，由此提出了一个能用于工程设计的多目标模糊全局优化设计方法。介绍了按该方法研制的软件ＭＦＤ的功能和性能，以及一个用该软件分析的拱坝体型设计实例。     

Improving technical specifications from a risk perspective

The Technical Specifications (TSs) for a nuclear power plant is an important licensing document which defines various operational requirements or conditions. In light of the recent trends to move towards risk-based regulation, many researchers analyzed the risk impacts associated with the TS requirements, using the plant models, such as event trees or fault trees, that were developed as part of probabilistic safety assessments. This paper presents the insights gained from a review of these risk-based analyses of TSs, focussing on surveillance requirements and AOT (allowed outage time) requirements.     

牙鲆淋巴囊肿病的PCR诊断方法研究

以中国养殖牙鲆 (Paralichthysolivaceus)淋巴囊肿病毒 (Lymphocystisdiseasevirus,LCDVcn)主要衣壳蛋白 (majorcapsidprotein ,MCP)基因的中间保守序列为目标基因 ,设计了一对特异性引物。该引物可扩增出 172bp的病毒DNA片段 ,其最小DNA检出量为 0 0 183ng。用PCR法从人工感染淋巴囊肿病毒 3天的牙鲆血、鳃、肝、脾、肠、胃及自然发病牙鲆的肿瘤中 ,分别检测到了LCDV的存在。本实验结果证明 ,PCR法对于早期检测LCDV是十分有效的。     

光刻胶灰化工艺与深亚微米线条的制作

随着器件尺寸的缩小，细线条的制作成为很关键的工艺，普通光学光刻已接近其分辨率的极限，而电子束光刻和Ｘ射线光刻技术复杂、费用昂贵。本文对光刻胶灰化工艺进行了分析和研究，并应用此工艺进行了深亚微米线条的制作，在普通光学光刻机上制作出宽度小于０．２５μｍ细线条。我们已将此工艺成功地应用在深亚微米ＭＯＳＦＥＴ的制作中。     

聚六亚甲基碳酸酯二醇增韧环氧树脂的结构与性能

采用羟基封端的脂肪族碳酸酯－聚六亚甲基碳酸酯二醇对环氧树脂进行了增韧，通过扫描隧道显微镜，扫描电子显微镜，差示扫描量热分析以及动态力学性能分析等方法研究了增韧ＥＰ的结构与性能的关系。