An Investigation of Microstructure and Microhardness of Sn-Cu and Sn-Ag Solders as Functions of Alloy Composition and Cooling Rate

The microstructure and microhardness of Sn-xAg and Sn-xCu solders were investigated as functions of alloy composition and cooling rate. The Ag compositions examined varied from 0.5 wt.% to 3.5 wt.%, while Cu varied from 0.5 wt.% to 2.0 wt.%. Three cooling rates were employed during solidification: 0.02°C/s (furnace cooling), about 10°C/s (air cooling), and 100°C/s or higher (rapid solidification). Sn grain size and orientation were observed by cross-polarization light microscopy and electron-backscattering diffraction (EBSD) techniques. The microhardness was measured to correlate the mechanical properties with alloy compositions and cooling rates. From this study, it was found that both alloy composition and cooling rate can significantly affect the Sn grain size and hardness in Sn-rich solders. The critical factors that affect the microstructure–property relationships of Sn-rich solders are discussed, including grain size, crystal orientation, dendrite cells, twin boundaries, and intermetallic compounds (IMC).     

The Impact of Sequential Fluorination of π‐Conjugated Polymers on Charge Generation in All‐Polymer Solar Cells

The performance of all‐polymer solar cells (all‐PSCs) is often limited by the poor exciton dissociation process. Here, the design of a series of polymer donors ( P1 – P3 ) with different numbers of fluorine atoms on their backbone is presented and the influence of fluorination on charge generation in all‐PSCs is investigated. Sequential fluorination of the polymer backbones increases the dipole moment difference between the ground and excited states (Δµ_ge) from P1 (18.40 D) to P2 (25.11 D) and to P3 (28.47 D). The large Δµ_ge of P3 leads to efficient exciton dissociation with greatly suppressed charge recombination in P3 ‐based all‐PSCs. Additionally, the fluorination lowers the highest occupied molecular orbital energy level of P3 and P2 , leading to higher open‐circuit voltage (V_OC). The power conversion efficiency of the P3 ‐based all‐PSCs (6.42%) outperforms those of the P2 and P1 (5.00% and 2.65%)‐based devices. The reduced charge recombination and the enhanced polymer exciton lifetime in P3 ‐based all‐PSCs are confirmed by the measurements of light‐intensity dependent short‐circuit current density (J_SC) and V_OC, and time‐resolved photoluminescence. The results provide reciprocal understanding of the charge generation process associated with Δµ_ge in all‐PSCs and suggest an effective strategy for designing π‐conjugated polymers for high performance all‐PSCs.     

Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric

Low‐power, nonvolatile memory is an essential electronic component to store and process the unprecedented data flood arising from the oncoming Internet of Things era. Molybdenum disulfide (MoS₂) is a 2D material that is increasingly regarded as a promising semiconductor material in electronic device applications because of its unique physical characteristics. However, dielectric formation of an ultrathin low‐k tunneling on the dangling bond‐free surface of MoS₂ is a challenging task. Here, MoS₂‐based low‐power nonvolatile charge storage memory devices are reported with a poly(1,3,5‐trimethyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3) tunneling dielectric layer formed via a solvent‐free initiated chemical vapor deposition (iCVD) process. The surface‐growing polymerization and low‐temperature nature of the iCVD process enable the conformal growing of low‐k (≈2.2) pV3D3 insulating films on MoS₂. The fabricated memory devices exhibit a tunable memory window with high on/off ratio (≈10⁶), excellent retention times of 10⁵ s with an extrapolated time of possibly years, and an excellent cycling endurance of more than 10³ cycles, which are much higher than those reported previously for MoS₂‐based memory devices. By leveraging the inherent flexibility of both MoS₂ and polymer dielectric films, this research presents an important milestone in the development of low‐power flexible nonvolatile memory devices.     

Self‐Interference Cancellation for Shared Band Transmission in Nonlinear Satellite Communication Channels

For efficient spectral utilization of satellite channels, a shared band transmission technique is introduced in this paper. A satellite transmits multiple received signals from a gateway and terminal in the common frequency band by superimposing the signals. To improve the power efficiency as well as the spectral efficiency, a travelling wave tube amplifier in the satellite should operate near the saturation level. This causes a nonlinear distortion of the superimposed transmit signal. Without mitigating this nonlinear effect, the self‐interference cannot be properly cancelled and the desired signal cannot be demodulated. Therefore, an adaptive compensation scheme for nonlinearity is herein proposed with the proper operation scenario. It is shown through simulations that the proposed shared band transmission approach with nonlinear compensation and self‐interference cancellation can achieve an acceptable system performance in nonlinear satellite channels.     

Angular MST‐Based Topology Control for Multi‐hop Wireless Ad Hoc Networks

This letter presents an angular minimum spanning tree (AMST) algorithm for topology control in multi‐hop wireless ad hoc networks. The AMST algorithm builds up an MST for every angular sector of a given degree around each node to determine optimal transmission power for connecting to its neighbors. We demonstrate that AMST preserves both local and network‐wide connectivity. It also improves robustness to link failure and mitigates transmission power waste.     

Investigation of Sn Whisker Growth in Electroplated Sn and Sn-Ag as a Function of Plating Variables and Storage Conditions

Sn whiskers are becoming a serious reliability issue in Pb-free electronic packaging applications. Among the numerous Sn whisker mitigation strategies, minor alloying additions to Sn have been proven effective. In this study, several commercial Sn and Sn-Ag baths of low-whisker formulations are evaluated to develop optimum mitigation strategies for electroplated Sn and Sn-Ag. The effects of plating variables and storage conditions, including plating thickness and current density, on Sn whisker growth are investigated for matte Sn, matte Sn-Ag, and bright Sn-Ag electroplated on a Si substrate. Two different storage conditions are applied: an ambient condition (30°C, dry air) and a high-temperature/high-humidity condition (55°C, 85% relative humidity). Scanning electron microscopy is employed to record the Sn whisker growth history of each sample up to 4000 h. Transmission electron microscopy, x-ray diffraction, and focused ion beam techniques are used to understand the microstructure, the formation of intermetallic compounds (IMCs), oxidation, the Sn whisker growth mechanism, and other features. In this study, it is found that whiskers are observed only under ambient conditions for both thin and thick samples regardless of the current density variations for matte Sn. However, whiskers are not observed on Sn-Ag-plated surfaces due to the equiaxed grains and fine Ag₃Sn IMCs located at grain boundaries. In addition, Sn whiskers can be suppressed under the high-temperature/high-humidity conditions due to the random growth of IMCs and the formation of thick oxide layers.     

On Efficient Traffic Distribution for Disaster Area Communication Using Wireless Mesh Networks

In recent time, a great deal of research effort has been directed toward promptly facilitating post-disaster communication by using wireless mesh networks (WMNs). WMN technology has been considered to be effectively exploited for this purpose as it provides multi-hop communication through an access network comprising wireless mesh routers, which are connected to the Internet through gateways (GWs). One of the critical challenges in using WMNs for establishing disaster-recovery networks is the issue of distributing traffic among the users in a balanced manner in order to avoid congestion at the GWs. To overcome this issue, we envision a disaster zone WMN comprising a network management center. First, we thoroughly investigate the problem of traffic load balancing amongst the GWs in our considered disaster zone WMN. Then, we develop traffic load distribution techniques from two perspectives. Our proposal from the first perspective hinges upon a balanced distribution of the bandwidth to be allocated per user. On the other hand, our second perspective considers the dynamic (i.e., varying) bandwidth demands from the disaster zone users that requires a more practical and refined distribution of the available bandwidth by following an intelligent forecasting method. The effectiveness of our proposals is evaluated through computer-based simulations.     

Structure‐Properties Relationship in Iron Oxide‐Reduced Graphene Oxide Nanostructures for Li‐Ion Batteries

Non‐aqueous sol‐gel routes involving the reaction of metal oxide precursors in organic solvents (e.g., benzyl alcohol) at moderate temperature and pressure, offer advantages such as high purity, high reproducibility and the ability to control the crystal growth without the need of using additional ligands. In this paper, a study carried out on a series of iron oxide/reduced graphene oxide composites is presented to elucidate a structure‐properties relationship leading to an improved electrochemical performance of such composites. Moreover, it is demonstrated that the easy production of the composites in a variety of temperature and composition ranges, allows a fine control over the final particles size, density and distribution. The materials obtained are remarkable in terms of the particle's size homogeneity and dispersion onto the reduced graphene oxide surface. Moreover, the synthesis method used to obtain the graphene oxide clearly affects the performances of the final composites through the control of the restacking of the reduced graphene oxide sheets. It is shown that a homogeneous and less defective reduced graphene oxide enables good electrochemical performances even at high current densities (over 500 mAh/g delivered at current densities as high as 1600 mA/g). The electrochemical properties of improved samples reach the best compromise between specific capacity, rate capability and cycle stability reported so far.     

Application of high-quality SiO/sub 2/ grown by multipolar ECR source to Si/SiGe MISFET

A 5 nm-thick SiO/sub 2/ gate was grown on an Si (p/sup +/)/Si/sub 0.8/Ge/sub 0.2/ modulation-doped heterostructure at 26 degrees C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field >12 MV/cm and fixed charge density approximately 3*10/sup 16/ cm/sup -2/. Leakage current as low as 1 mu A was obtained with the gate biased at 4 V. The MISFET with 0.25*25 mu m/sup 2/ gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.<>     

Sequential packing algorithm for channel assignment under cochanneland adjacent-channel interference constraint

Generally, the channel-assignment problem (CAP) for mobile cellular systems is solved by graph-coloring algorithms. These algorithms, though sometimes can yield an optimal solution, do not supply any information on whether an optimal solution has been found or bow far away it is from the optimum. In view of these undesirable features, two relevant results are presented. First, a lower bound for the minimum number of channels required to satisfy a given call-traffic demand is derived. This lower bound is tighter than the existing ones under certain conditions and can be used as a supplement for other approximate algorithms. Second, we propose an efficient heuristic algorithm to solve this problem. Although the CAP is nondeterministic polynomial (NP) complete in general, our algorithm provides an optimal solution for a special class of network topologies. For the general case, promising results are obtained, and numerical examples show that our algorithm has a better performance than many existing algorithms