History of the “Detector Materials Engineering” Crystal Growth Process for Bulk Hg1−x Cd x Te

This paper reviews the history and technology of a bulk Hg_1?x Cd _x Te crystal growth process that was developed in the early 1980s at Honeywell Electro-Optics Division (presently BAE Systems, Electronic Solutions). The crystal growth process name, DME, was an acronym for the department name: Detector Materials Engineering. This was an accelerated crucible rotation technique (ACRT) vertical traveling heater method growth process. Crystal growth occurred in the pseudobinary Hg_1?x Cd _x Te system. ACRT mixing allowed the lower-density, higher-x-value Hg_1?x Cd _x Te growth nutrient in the upper region of the ampoule to replenish the depleted melt and allowed the growth of constant-x-value, higher-density Hg_1?x Cd _x Te. The material grown by this research and production growth process yielded single crystals that had improved purity, compositional uniformity, precipitate density, and reproducibility in comparison with solid-state recrystallization and other bulk Hg_1?x Cd _x Te growth techniques. Radial and longitudinal nonuniformities in x-value for Hg_1?x Cd _x Te were reduced to <0.0008/cm. The net electrically active background impurities did not exceed 1 × 10¹⁴ cm^?3. Electron mobilities in excess of 1.5 × 10⁶ cm²/V-s were observed at 77 K. Structural defects of less than 10⁴ cm^?2 were measured. Te precipitates were not observed. As a result of these material improvements, long-wavelength infrared (LWIR) photoconductive devices fabricated from DME material had highly desired performance characteristics.     

Design of linear phase FIR filters using the LMS algorithm

The application of the stochastic gradient (least mean square) algorithm, the design of linear phase finite impulse response (FIR) filters, is discussed. Analytical results are presented and supported by simulation experiments to demonstrate the superior performance of the LMS algorithm equipped with the linear phase constraint as compared to the standard LMS algorithm     

Collectively Exhaustive Electrodes Based on Covalent Organic Framework and Antagonistic Co‐Doping for Electroactive Ionic Artificial Muscles

In this study, high‐performance ionic soft actuators are developed for the first time using collectively exhaustive boron and sulfur co‐doped porous carbon electrodes (BS‐COF‐Cs), derived from thiophene‐based boronate‐linked covalent organic framework (T‐COF) as a template. The one‐electron deficiency of boron compared to carbon leads to the generation of hole charge carriers, while sulfur, owing to its high electron density, creates electron carriers in BS‐COF‐C electrodes. This antagonistic functionality of BS‐COF‐C electrodes assists the charge‐transfer rate, leading to fast charge separation in the developed ionic soft actuator under alternating current input signals. Furthermore, the hierarchical porosity, high surface area, and synergistic effect of co‐doping of the BS‐COF‐Cs play crucial roles in offering effective interaction of BS‐COF‐Cs with poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), leading to the generation of high electro‐chemo‐mechanical performance of the corresponding composite electrodes. Finally, the developed ionic soft actuator based on the BS‐COF‐C electrode exhibits large bending strain (0.62%), excellent durability (90% retention for 6 hours under operation), and 2.7 times higher bending displacement than PEDOT:PSS under extremely low harmonic input of 0.5 V. This study reveals that the antagonistic functionality of heteroatom co‐doped electrodes plays a crucial role in accelerating the actuation performance of ionic artificial muscles.     

Exploiting information theory for adaptive mobility and resource management in future cellular networks

We utilize tools from information theory to develop adaptive algorithms for two key problems in cellular networks: location tracking and resource management. The use of information theory is motivated by the fundamental observation that overheads in many aspects of mobile computing can be traced to the randomness or uncertainty in an individual user's movement behavior. We present a model-independent information-theoretic approach for estimating and managing this uncertainty, and relate it to the entropy or information content of the user's movement process. Information-theoretic mobility management algorithms are very simple, yet reduce overhead by /spl sim/80 percent in simulated scenarios by optimally adapting to each individual's movement. These algorithms also allow for flexible tradeoff between location update and paging costs. Simulation results demonstrate how an information-theory-motivated resource provisioning strategy can meet QoS bounds with very small wastage of resources, thus dramatically reducing the overall blocking rate.     

Differential current switch logic: a low power DCVS logic family

Differential current switch logic (DCSL), a new logic family for implementing clocked CMOS circuits, has been developed. DCSL is in principle a clocked differential cascode voltage switch logic circuit (DCVS). The circuit topology outlines a generic method for reducing internal node swings in clocked DCVS logic circuits. In comparison to other forms of clocked DCVS, DCSL achieves better performance both in terms of power and speed by restricting internal voltage swings in the NMOS tree. DCSL circuits are capable of implementing high complexity high fan-in gates without compromising gate delay. Automatic lock-out of inputs on completion of evaluation is a novel feature of the circuit. Three forms of DCSL circuits have been developed with varying benefits in speed and power. SPICE simulations of circuits designed using the 1.2 μm MOSIS SCMOS process indicate a factor of two improvement in speed and power over comparable DCVS gates for moderate tree heights     

Electrical and photovoltaic response of bulk hetero-junction device made from poly (3-phenyl azo methine thiophene) (PPAT) and 1, 1′-diallyl substituted 4, 4′-dipyridine (DADP)

Electrical and photovoltaic properties of donor–acceptor composite system comprised of poly (3-phenyl azo methine thiophene) (PPAT) and 1, 1′–diallyl substituted 4, 4′-dipyridine (DADP) were investigated. A significant enhancement of photocurrent was observed when PPAT was blended with DADP. The increase in photocurrent has been explained in terms of efficient charge separation that resulted from the transfer of photo-excited electrons from PPAT to DADP. The strong quenching of fluorescence of PPAT was caused by the presence of DADP that indicates the photo-induced charge transfer from PPAT to DADP. The open circuit voltage (V_oc) generated in the device is independent of the variation of work function of negative metal electrode that has been explained in terms of Fermi level pinning between DADP and metal via surface charges. The electrical characteristics of ITO/PPAT: DADP/Al photovoltaic device were determined by analyzing the dependence of short circuit photocurrent density (J_sc) and V_oc under illumination at different temperatures. The V_oc decreases almost linearly with increasing temperature, while short-circuit photocurrent increases logarithmically with temperature and saturates at higher temperature above 330 K. This dependence of J_sc and V_oc on temperature has been discussed in terms of possible mechanism that involves the photovoltage generation and charge carrier transport in the device under thermally activated state. The photovoltaic device made from PPAT: DADP blend has shown three times higher photosensitivity than that of made from pure PPAT.     

India's fast growing power sector - from regional development to the growth of a national grid

This paper describes the efforts of the Indian government to upgrade its power system to account for the increasing interconnections due to rapid regional development. These include the unibus act (EA2003), which addresses the issue of public sector monopoly and opens up the field for competition, private participation and reforms, and the implementation of the ABT to the intrastate level. The reforms and restructuring policies of the government have assured an adequate rate of return to investors. The national electricity policy implementation is expected to fulfill the aim of meeting more demand at a higher security level.     

New approach to model nonquasi-static (NQS) effects for MOSFETs. Part I: Large-signal analysis

This paper presents a new nonquasi-static (NQS) model for the MOSFET. The model is derived from physics and only relies on the very basic approximation needed for a charge-based model. To derive the model, a popular variational technique named Galerkin's Method has been used. The model proves to be very accurate even for extremely fast changes in the bias voltages. Simulation results show a very good match even when the rise time of the applied signal is smaller than the transit time of the device.     

Temperature-Dependent Giant Magnetoimpedance Effect in Amorphous Soft Magnets

Giant magnetoimpedance (GMI)-based devices offer potential as next-generation low-cost, flexible, ultrasensitive sensors. They can be used in applications that include current sensors, field sensors, stress sensors, and others. Challenging applications involve operation at high temperatures, and therefore studies of GMI temperature dependence and performance of soft magnetic materials are needed. We present a high-temperature GMI study on an amorphous soft magnetic microwire from room temperature to 560°C. The GMI ratio was observed to be nearly constant at ～86% at low temperatures and to decrease rapidly at ～290°C, finally reaching a near-zero value at 500°C. The rapid drop in GMI ratio at 290°C is associated with a reduction in the long-range ferromagnetic order as measured by the spontaneous magnetization (M) at the Curie temperature (T _c). We also correlated the impedance with the magnetic properties of the material. From room temperature to 290°C, the impedance was found to be proportional to the square root of the magnetization to magnetic anisotropy ratio. Lastly, M(T) has been fit using a Handrich–Kobe model, which describes the system with a modified Brillouin function and an asymmetrical distribution of exchange interactions. We infer that the structural fluctuations of the amorphous phase result in a relatively small asymmetry in the fluctuation parameters.     

Modeling and optimization of fringe capacitance of nanoscale DGMOS devices

We analyze the impact of gate electrode thickness and gate underlap on the fringe capacitance of nanoscale double-gate MOS (DGMOS) transistors. We propose an analytical fringe capacitance model considering gate underlap and finite source/drain length. A comparison with the simulation results show that the model can accurately estimate the fringe capacitance of the device. We show that an optimum gate underlap can significantly reduce the fringe capacitance resulting in higher performance and lower power consumption. Also, the effects of process variation in gate underlap devices are discussed. Simulation results on a three-stage ring oscillator show that with optimum gate underlap 32% improvement in delay can be achieved.