Tensile Behavior of Single-Crystal Tin Whiskers

The growth of metallic (predominantly Sn) whiskers from pure metallic platings has been studied for over 50 years. While the phenomenon of Sn whiskering has been studied for decades, very little is known about the mechanical properties of these materials. This can be attributed to the difficulty in handling, gripping, and testing such fine-diameter and high-aspect-ratio whiskers. We report on the stress–strain behavior of Sn whiskers inside a dual-beam focused ion beam (FIB) with a scanning electron microscope (SEM). Lift-out of the whiskers was conducted in situ in the FIB, and the whiskers were tested using a microelectromechanical system tensile testing stage. Using this technique, the whiskers had minimum exposure to ambient air and were not handled by hand. SEM images after fracture enabled reliable calculation of the whisker cross-sectional area. Tests on two different whiskers revealed relatively high tensile strengths of 720 MPa and 880 MPa, respectively, and a limited strain to failure of ～2% to 3%. For both whiskers, the Young’s modulus was between 42 GPa and 45 GPa. It is interesting to note that the whiskers were quite strong and had limited ductility. These findings are intriguing and provide a basis for further work to understand the effect of Sn whisker mechanical properties on short circuits in electronics.     

Fast Ion Transport in Li-Rich Alloy Anode for High-Energy-Density All Solid-State Lithium Metal Batteries

All-solid-state Li batteries (ASSLBs) with solid-polymer electrolytes are considered promising battery systems to achieve improved safety and high energy density. However, Li dendrite formation at the Li anode under high charging current density/capacity has limited their development. To tackle the issue, Li-metal alloying has been proposed as an alternative strategy to suppress Li dendrite growth in ASSLBs. One drawback of alloying is the relatively lower operating cell voltages, which will inevitably lower energy density compared to cells with pure Li anode. Herein, a Li-rich Li₁₃In₃ alloy electrode (LiRLIA) is proposed, where the Li₁₃In₃ alloy scaffold guides Li nucleation and hinders Li dendrite formation. Meanwhile, the free Li can recover Li's potential and facilitate fast charge transfer kinetics to realize high-energy-density ASSLBs. Benefitting from the stronger adsorption energy and lower diffusion energy barrier of Li on a Li₁₃In₃ substrate, Li prefers to deposit in the 3D Li₁₃In₃ scaffold selectively. Therefore, the Li–Li symmetric cell constructed with LiRLIA can operate at a high current density/capacity of 5 mA cm⁻²/5 mAh cm⁻² for almost 1000 h.     

A theoretical study of the performance of sub-micron MOSFET devices in the presence of edge potential

In the present communication we have presented a detailed theoretical analysis of the performance of the sub-micron device in the presence of the discontinuity at the Si–SiO₂ interface. It is assumed that due to interface discontinuity a potential develops at the edges (Source/Drain) in addition to the built-in-potential. This potential, called Edge Potential, measures directly the extent of the interface roughness. The effect of this potential is more critical in the case of short channel device where drain and source are in close proximity. Our analysis shows that the discontinuity is dominant at the edges but not in the channel. Drive current as well as saturation transconductance decreases in the presence of edge potential. These results suggest that the performance of the device degrades due to the interface roughness. Effect of interface roughness near the edges can be reduced at high gate voltage but it will result more interface roughness scattering.     

Combating/eliminating dispersion-induced fading using suppressed carrier link for OFDM signal

We investigate the performance of 20-GHz radio over fibre (RoF) system having orthogonal frequency division multiplexed (OFDM) as radio signal using two modulation techniques – balanced detection for intensity modulation direct detection (IMDD) and coherent heterodyne detection suppressed carrier (SC) modulation. Dispersion-induced power fading is seen in conventional IMDD links due to the dependence of dispersion over frequency-dependent refractive index of the fibre. SC link is seen to compensate the power fading by terminating the direct current and even-order harmonics with the suppression of carrier along with balanced detection.     

Programmable memory cell using quantum confined Stark effect in multi-quantum well heterojunction bipolar transistor

A three terminal bistable programmable memory cell which can be read either optically or electrically is proposed and demonstrated. The device is based on using Stark effect of the excitonic transitions in a multi-quantum well base region of a heterojunction bipolar transistor. The single device can be flipped (and held) from low transmittance (high voltage) to high transmittance (low voltage) state and vice versa by a varying base current signal.<>     

Study of meander line delay in circuit boards

A moment technique is used to determine the propagation delay in meander (serpentine) delay lines located in printed circuit boards of computer systems. The full three-dimensional effects of the meander structure including signal line thickness, right-angle bends, and skin-effect are included. A set of delay lines having different pitches are considered, and results are calculated and compared to those from two-dimensional simulations, other commercial codes, analytic formulas in the literature, and experimental measurements. Based on the consistency of the results and sensitivity analyses involving numerical gridding and frequency content, the delays calculated for meander lines situated in a homogeneous medium are accurate to better than a few tenths of a percent     

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

This paper demonstrates gate-all-around (GAA) n- and p-FETs on a silicon-on-insulator with /spl les/ 5-nm-diameter laterally formed Si nanowire channel. Alternating phase shift mask lithography and self-limiting oxidation techniques were utilized to form 140- to 1000-nm-long nanowires, followed by FET fabrication. The devices exhibit excellent electrostatic control, e.g., near ideal subthreshold slope (/spl sim/ 63 mV/dec), low drain-induced barrier lowering (/spl sim/ 10 mV/V), and with I/sub ON//I/sub OFF/ ratio of /spl sim/10/sup 6/. High drive currents of /spl sim/ 1.5 and /spl sim/1.0 mA//spl mu/m were achieved for 180-nm-long nand p-FETs, respectively. It is verified that the threshold voltage of GAA FETs is independent of substrate bias due to the complete electrostatic shielding of the channel body.     

Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

A top-down approach of forming SiGe-nanowire (SGNW) MOSFET, with Ge concentration modulated along the source/drain (Si_0.7Ge_0.3) to channel (Si_0.3Ge_0.7) regions, is presented. Fabricated by utilizing a pattern-size-dependent Ge-condensation technique, the SGNW heterostructure PMOS device exhibits 4.5times enhancement in the drive current and transconductance (G_m) as compared to the homojunction planar device (Si_0.7Ge_0.3). This large enhancement can be attributed to several factors including Omega-gated nanowire structure, enhanced hole injection efficiency (due to valence band offset), and improved hole mobility (due to compressive strain and Ge enrichment in the nanowire channel).     

Water-table variation in a sloping aquifer due to random recharge

Variation in the level of the water table is closely linked with recharge. Therefore, any uncertainty associated with the recharge rate is bound to affect the nature of the water-table fluctuation. In this note, a ditch-drainage problem of a sloping aquifer is considered to investigate the effect of uncertainty in the recharge rate on water-table fluctuation. The rate of recharge is taken as an exponentially decaying function with its decay constant as a Gaussian random variable. Expressions for the first two moments of the water-table height, i.e. mean and standard deviation, are presented. By using these expressions, the effect of uncertainty in the recharge rate on the water-table fluctuation has been analyzed with the help of a numerical example.