A threshold temperature effect for a carbon particle heated in plasma

Numerical simulations of the heating of a carbon dust particle (pellet) in hydrogen plasma showed that the character of heating depends in a threshold manner on the initial temperature of the pellet. The heating proceeds at a high rate if the initial temperature is above a certain threshold (“hot” regime), and at a much lower rate for an initial temperature below this threshold (“cold” regime). An important factor in this process is thermionic emission, which leads to positive charging of a pellet in hydrogen plasma due to electron emission from the surface in the hot regime. In the cold regime, the pellet acquires a negative charge that retards the electron flux from plasma to the particle. A method for the experimental observation of this effect is proposed.     

The Influence of Ir and Pt Addition on the Synthesis of Fullerenes at Atmospheric Pressure

The addition of metallic Ir and Pt to a fullerene-forming, atmospheric-pressure plasma reactor was found to influence the generation of carbonaceous products. It was observed that the added metals were efficiently dispersed into the plasma and that their presence increased the yield of fullerenes. The addition of Ir led to a noticeable shift in the fullerene distribution towards C₆₀, whereas the addition of Pt increased the proportion of C₆₀ oxides and decreased the proportion of higher fullerenes. Addition of Ir also caused a reduction of the soot particle size and the formation of a considerable quantity of carbon nanotubes.     

Results of benchmark calculations based on OLHF-1 test

The subject of this paper is to compare the results of the different calculations performed by the benchmark participants in the framework of the OECD Lower Head Failure (OLHF) program. The benchmark consists in the finite element (FE) calculation or in analytical calculations of the mechanical behavior of the OLHF-1 experiment. Seven participants from six countries and seven companies or organizations (AVN, VTT, GRS, UJV, SNL, IPSN and CEA) have performed the benchmark.The OLHF experiment program extends the NRC-sponsored SNL LHF program (NUREG/CR-5582) completed in 1998: these experiments where intended to simulate the thermal/mechanical loads to a 1/4.85-scale model of a reactor pressure vessel. The pressure vessel material (SA533B1 steel) used in these experiments is prototypic of reactor PWR vessel material and has been well characterized by material property testing as part of this program. The OLHF tests advance the results of the previous testing program by examining the effects of large temperature differences across the vessel wall. Large temperature differences in excess of 150–400 K are more prototypic of accident conditions.Most of the participants performed 2-D axisymmetric analyses and doesn’t study the crack opening. The global mechanical behaviour of OLHF-1 experiment is well represented but prediction of the maximum vertical displacement is not in good agreement with the experimental value. Failure time and location are in quite good agreement with experimental results but large discrepancies are observed on the mode of failure: creep or plasticity. To improve predictions, more investigation and work is needed on the choice of the failure criteria and failure mode.     

SIMULATION STUDIES OF THE REMOVAL OF WATER FROM ETHANOL BY A CATALYTIC DISTILLATION PROCESS

A new approach based on catalytic distillation (CD) technology was proposed to remove water from ethanol. Isobutylene was introduced to react with water in the CD column. The commercial software simulation tool Aspen Plus was used to investigate the effects of key design factors such as operating pressure and temperature, reactant ratios, reflux and distillate to feed ratios, number of separation and reaction stages, and feed and reaction zone location. It was found that the CD technology offers potential advantages of reduced energy consumption and reduced capital cost over traditional approaches for the removal of water from ethanol.     

Parallel path consistency

Filtering algorithms are well accepted as a means of speeding up the solution of the consistent labeling problem (CLP). Despite the fact that path consistency does a better job of filtering than arc consistency, AC is still the preferred technique because it has a much lower time complexity. We are implementing parallel path consistency algorithms on multiprocessors and comparing their performance to the best sequential and parallel arc consistency algorithms.^(1,2) (See also work by Kerethoet al. ⁽³⁾ and Kasif⁽⁴⁾) Preliminary work has shown linear performance increases for parallelized path consistency and also shown that in many cases performance is significantly better than the theoretical worst case. These two results lead us to believe that parallel path consistency may be a superior filtering technique. Finally, we have implemented path consistency as an outer product computation and have obtained good results (e.g., linear speedup on a 64K-node Connection Machine 2).     

Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)

Design and fabrication of lateral SiC reduced surface field (RESURF) MOSFETs have been investigated. The doping concentration (dose) of the RESURF and lightly doped drain regions has been optimized to reduce the electric field crowding at the drain edge or in the gate oxide by using device simulation. The optimum oxidation condition depends on the polytype: N/sub 2/O oxidation at 1300/spl deg/C seems to be suitable for 4H-SiC, and dry O/sub 2/ oxidation at 1250/spl deg/C for 6H-SiC. The average inversion-channel mobility is 22, 78, and 68 cm/sup 2//Vs for 4H-SiC(0001), (112~0), and 6H-SiC(0001) MOSFETs, respectively. RESURF MOSFETs have been fabricated on 10-/spl mu/m-thick p-type 4H-SiC(0001), (112~0), and 6H-SiC(0001) epilayers with an acceptor concentration of 1/spl times/10/sup 16/ cm/sup -3/. A 6H-SiC(0001) RESURF MOSFET with a 3-/spl mu/m channel length exhibits a high breakdown voltage of 1620 V and an on-resistance of 234 m/spl Omega//spl middot/cm/sup 2/. A 4H-SiC(112~0) RESURF MOSFET shows the characteristics of 1230 V-138 m/spl Omega//spl middot/cm/sup 2/.     

Thermodynamic properties and defect structure of semiconducting compound phases: Tin telluride

Defect equilibria for binary semiconducting compound phases which exhibit ionized native donor and acceptor defects were considered, and equations describing the pressure-temperature-composition relationships for these compound phases were derived. These equations were used to analyze experimental data from the literature for tin telluride. Excellent agreement was obtained between calculated thermodynamic and phase boundary values and experimental data. The approach presented is readily extended to obtain equations for the thermodynamic properties of ternary and higher order semiconducting compound phases.     

Vitamin allowance of cosmonauts during preflight training and after completing short space flights

Supply of the main and doubling crews of cosmonauts with vitamins C, A, D, E, B1, B2, B6, PP, and B12, folic acid and carotinoids was studied during training and after the completion of short-term space flights (from 4 to 13 days). As the result of the investigation conducted during the intensive training, 1 month before the space flight some cases of certain vitamins deficiency were revealed. Administration of additional vitamins during 2 weeks before the flight led to a rise in the cosmonauts' supply with vitamins. The findings obtained after the short-term space flights evidence an intensive metabolization of vitamins and increased vitamin requirements during this period.