Gain saturation dependence on signal wavelength in a travelling-wave semiconductor laser amplifier

Gain saturation dependence on signal wavelength in a 1.5 ?m InGaAsP travelling-wave semiconductor laser amplifier is experimentally studied. Saturation output powers were 6.9dBm, 8.3dBm and 10.6dBm for signal wavelengths of 1490 nm, 1510 nm and 1540 nm, respectively. This saturation dependence on wavelength, i.e. higher saturation output power for longer signal wavelength, results from signal gain peak shift towards longer wavelength with increasing input power.     

硫脲型整合树脂在分析上的应用 Ⅰ.岩样中微量银的中子活化分析

前言银和其他贵金属元素一样,在地壳中比较稀少,按其自然丰度为第67号元素,平均含量仅0.07 ppm。由于地质样品成分非常复杂,为测定其微量银,必须进行严格的化学分离。但是迄今文献中报道的许多分离分法,步骤都相当冗长,一般采用氯化银反     

Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation

Si/SiGe n-type modulation-doped field-effect transistors grown on a very thin strain-relieved Si/sub 0.69/Ge/sub 0.31/ buffer on top of a Si(100) substrate were fabricated and characterized. This novel type of virtual substrate has been created by means of a high dose He ion implantation localized beneath a 95-nm-thick pseudomorphic SiGe layer on Si followed by a strain relaxing annealing step at 850/spl deg/C. The layers were grown by molecular beam epitaxy. Electron mobilities of 1415 cm/sup 2//Vs and 5270 cm/sup 2//Vs were measured at room temperature and 77 K, respectively, at a sheet carrier density of about 3/spl times/10/sup 12//cm/sup 2/. The fabricated transistors with Pt-Schottky gates showed good dc characteristics with a drain current of 330 mA/mm and a transconductance of 200 mS/mm. Cutoff frequencies of f/sub t/=49 GHz and f/sub max/=95 GHz at 100 nm gate length were obtained which are quite close to the figures of merit of a control sample grown on a conventional, thick Si/sub 0.7/Ge/sub 0.3/ buffer.     

Ionoluminescence decay measured with single ions

A new ion beam analysis-based, single ion technique called the time to first photon has been developed to measure the decay of the luminescence signal of phosphors. Such measurements are currently needed to study luminescence decay mechanisms following high-density excitations and to identify strongly luminescent phosphor coatings with short lifetimes for ion photon emission microscopy (IPEM). The samples for this technique consist of thin phosphor layers placed or coated on the surface of PIN diodes. Single ions from an accelerator strike this sample and simultaneously create ion beam induced luminescence (IBIL) from the phosphor that is measured by a single-photon-detector, and an ion beam induced charge collection (IBICC) signal in the PIN diode. In this case, the IBICC signal provides the start pulse and the IBIL signal the stop pulse to a time to amplitude converter. It is straightforward to show that this approach also measures a signal proportional to activity versus time with an accuracy of 5% as long as the number of detected photons per ion is less than 0.1, which usually requires the use of absorbers for the IBIL detector or electronic discrimination for the IBIL signals. Details of the new analysis are given together with examples of luminescence decay measurements of several ceramic phosphors being considered to coat IPEM samples. IPEM is currently being developed at Sandia National Laboratory (SNL), the University of North Texas in Denton, and the Universities and INFN of Padova and Torino.     

Radiation chemical reactions of poly-p-chlorphenylmethacrylate by ESCA

Summary ESCA is used to characterize ion beam irradiated P(p-ClPhMA)-samples. The results show a chlorine abstraction. The experimental findings are in accordance with a recently proposed model for a crosslinking mechanism of halogenated aromatic polymers.     

The effect of charge relaxation on the electromagnetic radiation of an oscillating charged viscous drop

A dispersion equation for the capillary oscillations of a charged drop of incompressible liquid possessing a finite electric conductivity is derived with an allowance for the energy lost as a result of the electromagnetic wave emission. The magnitude of the electromagnetic radiation losses of the oscillating drop linearly increases with the electric conductivity and the surface mobility of charge carriers.     

Inductive switching of 4H-SiC gate turn-off thyristors

The high-temperature operation of a silicon carbide gate turn-off thyristor is evaluated for use in inductively loaded switching circuits. Compared to purely resistive load elements, inductive loads subject the switching device to higher internal power dissipation. The ability of silicon carbide components to operate at elevated temperatures and high power dissipations are important factors for their use in future power conversion/control systems. In this work, a maximum current density of 540 A/cm² at 600 V was switched at a frequency of 2 kHz and at several case temperatures up to 150°C. The turn-off and turn-on characteristics of the thyristor are discussed     

The ponding problem on elastic membranes: an analog equation solution

 In this paper, the nonlinear response of elastic membranes with arbitrary shape under partial and full ponding loads has been analyzed. Large deflections are considered, which result from nonlinear kinematic relations. The problem is formulated in terms of the displacements components and the three coupled nonlinear governing equations are solved using the analog equation method (AEM). The membrane may be prestressed either by prescribed boundary displacements or tractions. Using the concept of the analog equation the three coupled nonlinear equations are replaced by three uncoupled Poisson's equations with fictitious sources under the same boundary conditions. Subsequently, the fictitious sources are established using a procedure based on the BEM and the displacement components as well as the stress resultants at any point of the membrane are evaluated from their integral representations. In addition to the geometrical nonlinearity, the ponding problem is itself nonlinear, because the ponding load depends on the deflection surface that it produces. Iterative schemes are developed which converge to the equilibrium state of the membrane under the ponding loads. Several membranes are analyzed which illustrate the method and demonstrate its efficiency and accuracy. The method has all the advantages of the pure BEM, since the discretization and integration is limited only to the boundary. Received 28 July 2001