A wafer level monitoring method for plasma-charging damage usingantenna PMOSFET test structure

A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices     

Brennstoffzellen

For two applications of fuel cells (SOFC and IMFC) system configurations and energy balances are presented. A decentralized combined heat and power plant on SOFC basis can be designed as a flexible system with high efficiency. A drive system with methanol reformer and fuel cell (IMFC) in comparison with a natural gas combustion engine has lower energy comsumption and much lower emissions.     

A phenomenological model for giant magnetoresistance hysteresis inmagnetic discontinuous multilayer films

A simple phenomenological model for giant magnetoresistance (GMR) is employed for current and field parallel (CIP) to the magnetic multilayer planes in ordinary and discontinuous multilayer films. To our knowledge, it is the first model to include hysteresis in the field (H) dependence of the GMR. The computed GMR versus H curves qualitatively reproduce the GMR hysteresis seen experimentally. In particular, two GMR peaks are found to be symmetrically placed about H=0, and the GMR hysteresis curve itself is found to have an inverted butterfly shape. Also seen in the computed results is the general increase in GMR magnitude found for annealed discontinuous multilayer films. Various parameter variations are examined in the computed results. While the model reproduces GMR hysteresis quite well and the general increase in GMR for discontinuous multilayer films, it does not, in its present form, account for the oscillations seen in the GMR when the nonmagnetic layer thicknesses are varied, which is expected as a strictly quantum mechanical result     

Reduction of sodium-accelerated oxidation of silicon nitride ceramics by aluminium implantation

Norton NBD 200 silicon nitride ceramics were implanted with sodium to a dose of 7.0×10¹⁵cm^-2 at 72 keV (1 at% peak sodium content at 100 nm). The sodium-implanted samples were further implanted with aluminium to 7.3×10¹⁵cm^-2 at 87 keV (1 at% peak aluminium content at 100 nm). The implanted and unimplanted samples were oxidized in 1 atm dry oxygen at 1100 and 1300°C for 2–6 h. Profilometry and scanning electron microscopy measurements indicated that sodium implantation led to up to a two-fold increase in the oxidation rate of silicon nitride. The sodium effect was effectively neutralized when aluminium was co-implanted. The opposite effects of sodium and aluminium on the oxidation resistance of silicon nitride can be attributed to their different roles in modifying the structure and properties of the oxide formed. This revised version was published online in November 2006 with corrections to the Cover Date.     

Water sorption of glycol-modified cross-linked gelatin-based hydrogels

The water sorption behaviour of several cross-linked gelatin-based systems were investigated and compared. The systems were gelatin, gelatin/ethyleneglycol, gelatin/polyoxypropylenediamine, and gelatin/polyethylene oxide. For all the systems, an increased water gain was obtained by raising the concentration of the second component, while the swelling was reduced by an increase of the cross-linking density. This revised version was published online in November 2006 with corrections to the Cover Date.     

The lattice dynamics of the Fe(tpa) (NCS)2 complex : light-induced excited spin state trapping effect

A light-induced excited spin state trapping (LIESST) experiment for a thermal gradual spin crossover complex, Fetris (2-pyridylmethyl) amine(NCS)2 or Fe(tpa) (NCS)2, was attempted for the first time. The high spin (HS) state after light inducement stayed metastable over a period of days without relaxation at 10 K. Intersystem relaxation from a high to a low spin (LS) complex occurred at 50 K after bleaching at 10 K. Investigation of the Mossbauer spectra of the LIESST and relaxation experiment indicated that the Debye–Waller factor was a correlation parameter of the HS fraction and that the co-operative effect played a role in the relaxation process for such a solid compound. This revised version was published online in November 2006 with corrections to the Cover Date.     

Phase-only adaptive nulling with a genetic algorithm

This paper describes a new approach to adaptive phase-only nulling with phased arrays. A genetic algorithm adjusts some of the least significant bits of the beam steering phase shifters to minimize the total output power. Using small adaptive phase values results in minor deviations in the beam steering direction and small perturbations in the sidelobe level in addition to constraining the search space of the genetic algorithm. Various results are presented to show the advantages and limitations of this approach, in general, the genetic algorithm proves to be better than previous phase-only adaptive algorithms     

A low-resistance self-aligned T-shaped gate for high-performancesub-0.1-μm CMOS

This paper describes the high performance of T-shaped-gate CMOS devices with effective channel lengths in the sub-0.1-μm region. These devices were fabricated by using selective W growth, which allows low-resistance gates smaller than 0.1 μm to be made without requiring fine lithography alignment. We used counter-doping to scale down the threshold voltage while still maintaining acceptable short-channel effects. This approach allowed us to make ring oscillators with a gate-delay time as short as 21 ps at 2 V with a gate length of 0.15 μm. Furthermore, we experimentally show that the high circuit speed of a sub-0.1-μm gate length CMOS device is mainly due to the PMOS device performance, especially in terms of its drivability     

Quick estimation of rare events in stochastic networks

This paper presents a method for fast estimation of probabilities of rare events in stochastic networks, with a particular emphasis on coherent reliability systems. The method is based on the concepts of likelihood-ratios (LR), change of probability measure and the bottleneck-cut in the network. Both polynomial and exponential-time Monte Carlo estimators are defined, and conditions under which the time complexity of the proposed LR estimators is bounded by a polynomial are discussed. The accuracy of the method depends only on the size (cardinality) of the bottleneck-cut, not on the topology and actual size of the network. Supporting numerical results are presented, with the cardinality of the bottleneck-cut ⩽20