Mechanical stress control in a VLSI-fabrication process: a method for obtaining the relation between stress levels and stress-induced failures

An ideal fabrication process is designed to minimize mechanical stress in semiconductor devices and to improve device reliability. Mechanical stress levels were predicted by in-house simulations supported by a thin-film database. These stress levels were correlated with stress-induced defects by TEM analysis supported by fail bit addressing on matured megabit SRAMs. Amorphous-doped silicon film with various annealing temperatures were used for the gate electrode to change the mechanical stress in devices and to get the direct relationship between predicted stress levels and stress related defects. The authors describe brief guidelines for suppressing dislocations in the small geometry shallow-trench isolation process utilizing this system. Polysilicon thickness in the W-polycide gate electrode is designed to minimize mechanical stress in the gate oxide and to suppress the gate oxide failure in probe and class tests. Moreover, critical stress generates dislocations during post source/drain ion implantation anneal obtained by a ball indentation method. This indicated that lower temperature anneal is effective in suppressing the dislocations. A two-step anneal was introduced to suppress dislocations and to enable higher ion activation.     

Syntheses and structural properties of four Rb-aluminosilicate zeolites

Four types of Rb-aluminosilicate zeolites were hydrothermally synthesized in pure phase for the first time from Rb-aluminosilicate gels without using any organic structure-directing agent (SDA) under stirring conditions. The crystal structure of each zeolite was refined by Rietveld analysis of the X-ray diffraction (XRD) data. These crystal structures were confirmed to be Rb-mordenite, Rb-merlinoite, a new aluminosilicate zeolite with an ATT framework topology, and Rb-offretite denoted by RMA-1, RMA-2, RMA-3, and RMA-4, respectively. The Si/Al ratio of RMA-1 with an MOR topology varied from 5.3 to 8.0; however, the variation of the Si/Al ratios of the other zeolites was rather small. The crystal system of RMA-2 was tetragonal with space group I4/mmm, where two Rb sites were distributed at the center of an 8-membered ring (MR). On the other hand, two Rb sites in RMA-3 were located at the center of the 8-MR in small two cages. The structure of RMA-4 was identified as the OFF type with a local disorder or defect, which included a small amount of an intergrown ERI phase.     

Metastatic choriocarcinoma of the kidney discovered by refractory hematuria

A 53-year-old male suffered splenic infarction etiologically related to atrial fibrillation and non-obstructive hypertrophic cardiomyopathy. The main clinical manifestations were a one-month history of epigastric and left upper quadrant pain, with tenderness to palpation in the later zone. Laboratory tests revealed a slight leucocytosis (14.700) with left shift and a marked increase in LDH concentration (945 IU). Abdominal CAT and arteriography established the diagnosis, Echography proved normal. Patient evolution was satisfactory with conservative medical treatment. We conclude that splenic infarction should be considered in all cases of acute or chronic pain in the left hypochondrium. The diagnosis is established by CAT, arteriography and hepatosplenic gammagraphy. Medical management is initially advocated, surgery being reserved for those cases involving complications or in which diagnosis is not clear. Emphasis is placed on the main etiological, clinical, diagnostic and management characteristics of splenic infarction.     

Antiproliferative constituents in umbelliferae plants. IV. Constituents in the fruits of Anthriscus sylvestris Hoffm

The constituents in the fruit of Anthriscus sylvestris Hoffm. were investigated, and four lignans [deoxypodophyllotoxin, morelensin, (-)-deoxypodorhizone, and (-)-hinokinin], one phenylpropanoid [1-(3',4'-dimethoxyphenyl)-1 xi-hydroxy-2-propene], two phenylpropanoid esters [3',4'-dimethoxycinnamyl (Z)-2-angeloyloxymethyl-2-butenoate and 3',4'-dimethoxycinnamyl (Z)-2-tigloyloxymethyl-2-butenoate], and one polyacetylenic compound (falcarindiol) were isolated. Their antiproliferative activity against MK-1, HeLa and B16F10 cell lines is reported.     

Correlative MR-anatomic study of the median nerve

OBJECTIVE: The purpose of our study was to evaluate the effectiveness of MR imaging for showing the intrinsic anatomy of a peripheral nerve. Cadaver wrist specimens that included the median nerve were imaged with MR imaging at 3 T, then sectioned, stained, and inspected grossly and microscopically. The size, shape, and signal intensity of the sheath and axonal structures in the median nerve were identified in MR images by comparison with anatomic sections. CONCLUSION: This study suggests that MR imaging with sufficiently high-resolution techniques shows the internal structure of peripheral nerves. These results suggest that MR imaging may be a means to distinguish neuritis, tumor, degeneration, or fatty proliferation in a peripheral nerve and to evaluate the nerve before microsurgical anastomosis.     

A 20 GHz 8 bit multiplexer IC implemented with 0.5 μm WNx/W-gate GaAs MESFET's

An ultrahigh-speed 8 bit multiplexer (MUX) has been developed for future-generation optical-fiber communication systems having a data rate of 20 Gb/s. This IC was fabricated using a 0.5 μm WN_x/W-gate GaAs MESFET process based on optical lithography, ion implantation, and furnace annealing for good reproducibility and high throughput. The WN_x/W bilayer gate has a low sheet resistance, improving the circuit high frequency performance. To attain 20 GHz operation, advanced circuit techniques for the source-coupled FET logic (SCFL) were introduced. A cross coupled source-follower (CCSF) was developed mainly for the highest speed buffers to enhance the bandwidth. The first-stage T-type flip-flop was designed with optimization techniques and operated up to 21.1 GHz     

Structural study of degraded ZnMgSSe blue light emitters

Using electroluminescence (EL) topography and transmission electron microscopy (TEM), we investigated the nonluminescent regions which form while current is being injected into ZnMgSSe/ZnSSe/ZnCdSe-based blue light emitters. Small dark spots were observed just after turn-on and spread out forming rough nonluminescent triangles in the <100> directions in the EL image of the active region. TEM studies showed that the small dark spots are pre-existing stacking faults originating at the substrate/epitaxial layer interface. The nonluminescent triangles were found to be a dense region of dislocation dipoles and dislocation loops. Each dipole was aligned along two <110> directions in the {111} planes. The Burgers vectors were of the type a/2<011> inclined at 45° to the (001) junction plane.