Novel Abscisic Acid Antagonists Identified with Chemical Array Screening

Abscisic acid (ABA) signaling is involved in multiple processes in plants, such as water stress control and seed dormancy. Major regulators of ABA signaling are the PYR/PYL/RCAR family receptor proteins, group A protein phosphatases 2C (PP2Cs), and subclass III of SNF1‐related protein kinase 2 (SnRK2). Novel ABA agonists and antagonists to modulate the functions of these proteins would not only contribute to clarification of the signaling mechanisms but might also be used to improve crop yields. To obtain small molecules that interact with Arabidopsis ABA receptor PYR1, we screened 24 275 compounds from a chemical library at the RIKEN Natural Products Depository by using a chemical array platform. Subsequent SnRK2 and PP2C assays narrowed down the candidates to two molecules. One antagonized ABA in a competitive manner and inhibited the formation of the PYR1‐ABA‐PP2C ternary complex. These compounds might have potential as bioprobes to analyze ABA signaling.     

Preparation of Ceramic Composite Pipes Through Paste Extrusion

An experimental investigation was carried out in order to prepare ceramic composite pipes used for tubular solid oxide fuel cells by using a multi-billet extrusion technique. Particular emphasis was given to the forming possibility and extrusion behavior of a two-layer pipe consisting of NiO-YSZ(PSZ) (anode) and YSZ (electrolyte). It is shown that the extrusion pressure and binder content required decrease with increasing the fraction of nickel oxide in the anode layers. The porosity in the anode layers depends on the binder content in pastes. It is feasible to prepare anode/electrolyte composite pipes by means of co-extrusion of different pastes.Furthermore, it is possible to obtain sound sintered pipes even under pressureless sintering conditions.     

Self‐Aligned and Scalable Growth of Monolayer WSe2–MoS2 Lateral Heterojunctions

2D layered heterostructures have attracted intensive interests due to their unique optical, transport, and interfacial properties. The laterally stitched heterojunction based on dissimilar 2D transition metal dichalcogenides forms an intrinsic p–n junction without the necessity of applying an external voltage. However, no scalable processes are reported to construct the devices with such lateral heterostructures. Here, a scalable strategy, two‐step and location‐selective chemical vapor deposition, is reported to synthesize self‐aligned WSe₂–MoS₂ monolayer lateral heterojunction arrays and demonstrates their light‐emitting devices. The proposed fabrication process enables the growth of high‐quality interfaces and the first successful observation of electroluminescence at the WSe₂–MoS₂ lateral heterojunction. The electroluminescence study has confirmed the type‐I alignment at the interface rather than commonly believed type‐II alignment. This self‐aligned growth process paves the way for constructing various 2D lateral heterostructures in a scalable manner, practically important for integrated 2D circuit applications.     

Metal‐Guided Selective Growth of 2D Materials: Demonstration of a Bottom‐Up CMOS Inverter

2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large‐area electronics and circuits strongly relies on wafer‐scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal‐guided selective growth (MGSG), is reported. The success of control over the transition‐metal‐precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p‐ and n‐type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom‐up complementary metal‐oxide‐semiconductor inverter based on p‐type WSe₂ and n‐type MoSe₂ is achieved, which exhibits a high and reproducible voltage gain of 23 with little dependence on position.     

The Sympathetic Nervous System Contributes to the Establishment of Pre-Metastatic Pulmonary Microenvironments

Emerging evidence suggests that neural activity contributes to tumor initiation and its acquisition of metastatic properties. More specifically, it has been reported that the sympathetic nervous system regulates tumor angiogenesis, tumor growth, and metastasis. The function of the sympathetic nervous system in primary tumors has been gradually elucidated. However, its functions in pre-metastatic environments and/or the preparation of metastatic environments far from the primary sites are still unknown. To investigate the role of the sympathetic nervous system in pre-metastatic environments, we performed chemical sympathectomy using 6-OHDA in mice and observed a decrease in lung metastasis by attenuating the recruitment of myeloid-derived suppressor cells. Furthermore, we note that neuro-immune cell interactions could be observed in tumor-bearing mouse lungs in conjunction with the decreased expression of Sema3A. These data indicate that the sympathetic nervous system contributes to the preparation of pre-metastatic microenvironments in the lungs, which are mediated by neuro-immune cell interactions.     

Porosity-controlled multilayer TaC coatings prepared via wet powder process for multi-functional reactor components in GaN crystal growth system

Multilayer TaC coatings with layers of different porosities, that provide corrosion resistance and controlled wettability against molten metal are prepared via a wet powder process and a subsequent sintering process. A porous TaC top layer with a dense TaC underlayer formed on a graphite substrate is applied as a reactor component. It is found that this layer significantly increases the surface area of a molten Ga source via capillary action due to its high open porosity. It is also demonstrated that this layer enhances the Ga vapor supply rate, and thus the growth rate, during halogen-free vapor-phase epitaxial growth of GaN crystals.