Fabrication of 0.95Sn−0.05Au solder micro-bumps for flip-chip bonding

This letter describes the successful fabrication of a 0.95Sn−0.05Au solder microbump on a compound semiconductor wafer by reflowing of multi-layer metal film. Since the inherent interdiffusion in Au−Sn phases results in the alloying of multi-layer films, the composition of micro-bump is well controlled by the thickness of constituent metal films. The micro-bumps melt at about 220 C, which is close to the lowest eutectic temperature in a Au−Sn system. Solder bonding using 0.95Sn−0.05Au micro-bump is a very useful technique for the flipchip bonding of compound semiconductor devices.     

Crystal growth of MgAlB14-type compounds using metal salts and some properties

LEAlB₁₄ (orthorhombic, Imam) (LE = Li, Mg) crystals were grown using metal salts (Li₂CO₃, LiF, LiI, MgO, MgF₂, MgI₂) and crystalline boron from a high-temperature aluminium metal flux. The growth conditions for growing LEAlB₁₄ were established using the starting mixtures of B/LE = 2.0, and Al metal was added to each mixture at a mass ratio of 1:15–20. LEAlB₁₄ crystals from the Al-self flux using metal salts could be obtained from all the different salts. The maximum dimensions of LiAlB₁₄ and MgAlB₁₄ crystals were approximately 18 and 12 mm for the crystals obtained from LiF and MgF₂. The unit-cell parameters of as-grown LEAlB₁₄ are as follows: for LiAlB₁₄, obtained from LiF, a = 0.5846 (2) nm, b = 0.8144 (2) nm, c = 1.0355 (3) nm, V = 0.4930 (2) nm³: for MgAlB₁₄, obtained from MgF₂, a = 0.5845 (2) nm, b = 0.8114 (2) nm, c = 1.0330 (3) nm, V = 0.4899 (3) nm³. Microhardness, oxidation resistance and magnetic susceptibility of these materials are described in detail.     

Synthesis of ordered mesoporous carbon thin films at various temperatures in vapor infiltration method

Mesoporous carbon thin films with ordered structures were prepared by using resorcinol-surfactant self-assembly. A mixture of resorcinol, surfactant, and ethanol coated on silicon substrates was exposed to formaldehyde vapor as a cross-linking agent to form structured resorcinol/formaldehyde resin films. The films were then carbonized at 800 °C in an inert atmosphere to remove the surfactant and to obtain structured carbon materials. With this vapor infiltration method, thin films with several structures were obtained from the same precursor solution by employing different vapor infiltration temperatures. The results were interpreted from the transformation of the self-assembly during the vapor infiltration process.     

A statistical evaluation of the free energy of Fe-base ternary ordering alloys

The free energy of the Fe-base ternary ordering alloys whereB2 andD0₃ ordered structures are formed is evaluated. The statistical theory is employed using a pairwise interaction approximation taking into account not only the atomic interaction but also the magnetic interaction, based upon the Bragg-Williams-Gorsky model. The application of this model on Fe-Si-Co ordering alloys are demonstrated. The propriety of the calculation results are performed by comparing the experimental results. The influences of the magnetic energy to the stability of ordered structures are also demonstrated.     

An adaptive array utilizing an adaptive spatial averaging technique for multipath environments

When the interference is coherent with the desired signal, the conventional adaptive arrays working under the guiding principle of output power minimization tend to cancel the desired signal by using the coherent interference. A technique is described which enables the adaptive array to function even under such an environment. The array is divided into subarrays, whose input correlation matrices are adaptively averaged so as to produce a Toeplitz matrix which would be obtained when the interference did not correlate with the desired signal. The averaged matrix is now free from correlation terms between the desired signal and interference, and therefore may be used to derive the optimum weight for the array element just as in the ordinary radio environment of incoherent interference. Numerical examples show that the new adaptive array is highly capable to suppress the coherent interferences as well as incoherent ones.     

Microstructures of Annealed TiNiSn-Based Alloy Ribbons

The thermoelectric half-Heusler compounds Ti _x NiSn_0.998Sb_0.002 (x = 1.0 to 1.2) and Ti _y Zr_0.25Hf_0.25NiSn_0.998Sb_0.002 (y = 0.5 to 0.65) with nonstoichiometric nominal compositions were prepared by spin-casting and subsequent annealing at 1073 K for 24 h. The dimensionless figure of merit ZT at room temperature was maximized at x = 1.1 and y = 0.6 in Ti-rich compounds through an increase in absolute Seebeck coefficients despite a decrease in electrical conductivities. ZT reached 0.07 at x = 1.1 and 0.14 at y = 0.6. In powder x-ray diffraction analysis, minor phases of β-Sn, TiNi, Ti₂Sn, and Ti₅Sn₃ were observed in addition to a major phase of half-Heusler. The quantity of the minor phases was minimized at x = 1.1 and y = 0.55, where the absolute Seebeck coefficients are maximized. In transmission electron microscopic (TEM) analysis of Ti_0.55Zr_0.25Hf_0.25NiSn_0.998Sb_0.002, crystal grains of the half-Heusler phase, from several hundred nanometers to several micrometers in size, were observed. TEM energy-dispersive spectroscopy measurements indicated that fluctuations of Ti, Zr, and Hf compositions within the Ti-site in the half-Heusler phase may occur. Thermoelectric properties were improved at x = 1.1 and y = 0.6 rather than at the stoichiometric compositions of x = 1.0 and y = 0.5 due to minimization of the precipitate quantities.     

Numerical simulation on the behavior of a liquid jet into an air flow

A numerical simulation has been performed to clarify the effects of turbulence in a liquid on the deformation of the liquid jet surface into an air flow. The turbulences in the liquid jet were simulated by the Rankin vortices, and the liquid jet surface was tracked numerically by the volume of fluid method. By numerical simulations, the onset of the protrusions on the liquid jet surface is caused by the vortices in the liquid, and the surrounding air flow plays an important role in the amplification of the protrusions. The amplification rate of the trough displacement is proportional to the air‐to‐liquid velocity ratio. At large imposed vortex intensities, the trough displacement increases with the vortex intensity. On the other hand, at small imposed vortex intensities, the amplification of the trough displacement is also affected by factors other than vortex intensity. © 2001 Scripta Technica, Heat Trans Asian Res, 30(6): 473–484, 2001     

The study of activity median aerodynamic diameter using imaging plate technique for assessment of effective dose from radon and its decay products

The indoor workplace environment was evaluated for exposure to radon and its decay products at two Universities in two metropolises of Japan. The mean radon concentrations in Nagoya University (NU) and Hokkaido University (HU) were 16.7 Bq m(-3) and 18.0 Bq m(-3), respectively. Activity median aerodynamic diameter (AMAD) of particles at NU ranged from 172 nm approximately 205 nm and at HU from 186 nm approximately 300 nm. Estimated effective doses for five usual sites of NU by ICRP approach was 0.15 mSvy(-1) approximately 0.76 mSvy(-1) and by UNSCEAR approach was 0.05 mSvy(-1) approximately 0.24 mSvy(-1). The effective dose for the same of HU by ICRP 66 approach was 0.16 mSvy(-1) approximately 0.79 mSvy(-1) and by UNSCEAR 2000 approach was 0.05 mSv y(-1) to 0.26 mSv y(-1). The two approaches differs on an average by a factor 2.3- approximately 4.7. The AMAD of obtained particle size distribution at NU has an average total deposition of 23% in human respiratory tract and 20% at HU.     

Feasibility of high performance in p-type Ge1−xBixTe materials for thermoelectric modules

GeTe is a promising candidate for the fabrication of high-temperature segments for p-type thermoelectric (TE) legs. The main restriction for the widespread use of this material in TE devices is high carrier concentration (up to ∼ 10²¹ cm⁻³), which causes the low Seebeck coefficient and high electronic component of thermal conductivity. In this work, the band structure diagram and phase equilibria data have been effectively used to attune the carrier concentration and to obtain the high TE performance. The Ge_1−xBi_xTe (x = 0.04) material prepared by the Spark plasma sintering (SPS) technique demonstrates a high power factor accompanied by moderate thermal conductivity. As a result, a significantly higher dimensionless TE figure of merit ZT = 2.0 has been obtained at ∼ 800 K. Moreover, we are the first to propose that application of the developed Ge_1−xBi_xTe (x = 0.04) material in the TE unicouple should be accompanied by SnTe and CoGe₂ transition layers. Only such a unique solution for the TE unicouple makes it possible to prevent the negative effects of high contact resistance and chemical diffusion between the segments at high temperatures.