Preparation of diamondlike carbon films using nanopulse generator employing SI thyristor

Diamondlike carbon (DLC) films show high hardness, high electric resistivity, and the self‐lubricant characteristic, and many applications and synthesis methods have been reported. Pulse plasma chemical vapor deposition (CVD) is one of the synthesis methods suitable for DLC films on complicated form work, such as molding and extruding die. Ordinary, microsecond‐order pulse is used in this method. This paper describes the development of the synthesis method using nanosecond‐order pulse plasma CVD for DLC films. To realize this process, a static induction (SI) thyristor with an inductive energy storage (IES) circuit was used. Compared with microsecond, nanosecond‐order pulse plasma CVD method shows the characteristics of high electron temperature and exponential relationship between pulse frequency and growth rate. The characteristics of the thus‐obtained DLC films show two broad peaks of the disordered band at 1360 cm^?1 and the graphitic band at 1580 cm^?1 by Raman spectroscopy and hardness of 16.0 GPa and elastic modulus of 170 GPa. © 2007 Wiley Periodicals, Inc. Electr Eng Jpn, 159(4): 1–7, 2007; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20341     

Numerical simulation on the behavior of a liquid jet into an air flow

A numerical simulation has been performed to clarify the effects of turbulence in a liquid on the deformation of the liquid jet surface into an air flow. The turbulences in the liquid jet were simulated by the Rankin vortices, and the liquid jet surface was tracked numerically by the volume of fluid method. By numerical simulations, the onset of the protrusions on the liquid jet surface is caused by the vortices in the liquid, and the surrounding air flow plays an important role in the amplification of the protrusions. The amplification rate of the trough displacement is proportional to the air‐to‐liquid velocity ratio. At large imposed vortex intensities, the trough displacement increases with the vortex intensity. On the other hand, at small imposed vortex intensities, the amplification of the trough displacement is also affected by factors other than vortex intensity. © 2001 Scripta Technica, Heat Trans Asian Res, 30(6): 473–484, 2001     

Periodical shedding of cloud cavitation from a single hydrofoil in high-speed cryogenic channel flow

In order to explain criteria for periodical shedding of the cloud cavitation, flow patterns of cavitation around a plano-convex hydrofoil were observed using a cryogenic cavitation tunnel of a blowdown type. Two hydrofoils of similarity of 20 and 60 mm in chord length with two test sections of 20 and 60 mm in width were prepared. Working fluids were water at ambient temperature, hot water and liquid nitrogen. The parameter range was varied between 0.3 and 1.4 for cavitation number, 9 and 17 m/sec for inlet flow velocity, and −8° and 8° for the flow incidence angle, respectively. At incidence angle 8°, that is, the convex surface being suction surface, periodical shedding of the whole cloud cavitation was observed on the convex surface under the specific condition with cavitation number and inlet flow velocity, respectively, 0.5, 9 m/sec for liquid nitrogen at 192°C and 1.4, 11 m/sec for water at 88°C, whereas under the supercavitation condition, it was not observable. Periodical shedding of cloud cavitation occurs only in the case that there are both the adverse pressure gradient and the slow flow region on the hydrofoil.     

Electron-beam doping-electron radiation effects in impurity overlayers and semiconductor substrates

3-9 MeV electrons were used to introduce impurity Ge atoms into Si wafers from Ge sheets, which are in contact with a Si surface at 20-60‡C in water bath. Concentration-dependent diffusivities of ∼10-18-10^-14 cm²sec^-1 for Ge in Si were measured. Activation energies of sputtering yield for Ge and of the diffusivity of Ge in Si are estimated to be ∼0.3 eV and ∼0.58 eV, respectively. In a case of hot (∼250‡C) irradiation in ∼1x10^-3 Torr vacuum, also the similar concentration profiles of impurity atoms in the substrates were observed.     

A Spatial-Domain Technique for the Design of 3-D Separable-Denominator State-Space Digital Filters

In this paper,a technique for designing 3-D separable-denominator state-spacedigital filters is developed. The design process is divided intotwo phases. First, the coefficient matrices related to stabilityare constructed for the filter to be stable by using alternatingvariable method. Next, the other matrices are obtained by solvinglinear equations. These phases are repeated until there is nosignificant change in the squared error function.     

Current reliability issues and future technologies for systems on silicon – processes, circuits, chip architecture, and design

The progress of silicon technology is opening the era of “systems on silicon” in which a large-scale memory, a CPU, and other logic macros will be integrated on a single chip. These kinds of chips, called system LSIs, have an especially promising future in mobile and multimedia applications but face inherent technical problems related to the reliability of ultrathin oxide film, conflict in the processing of different components, increased gate and subthreshold leakage currents, memory bottlenecks, and design complexity. This paper reviews the system LSIs and then introduces related technologies in processing, circuits, chip architecture, and design. It also discusses the influence of the system LSIs on business strategies.     

Fabrication of 0.95Sn−0.05Au solder micro-bumps for flip-chip bonding

This letter describes the successful fabrication of a 0.95Sn−0.05Au solder microbump on a compound semiconductor wafer by reflowing of multi-layer metal film. Since the inherent interdiffusion in Au−Sn phases results in the alloying of multi-layer films, the composition of micro-bump is well controlled by the thickness of constituent metal films. The micro-bumps melt at about 220 C, which is close to the lowest eutectic temperature in a Au−Sn system. Solder bonding using 0.95Sn−0.05Au micro-bump is a very useful technique for the flipchip bonding of compound semiconductor devices.     

Modeling of ion-bombardment damage on Si surfaces for in-line analysis

Structures and mechanism of ion-bombardment damage on silicon wafers exposed to plasma were investigated comprehensively. By using molecular dynamics simulations high-resolution transmission electron microscopy, and composition analysis by high-resolution Rutherford backscattering spectroscopy, features such as gradual transition from the SiO₂ surface to the Si substrate and interface roughness were addressed. On the basis of these findings, the optical model that addresses the characteristics of plasma-damaged Si surfaces is given for ellipsometric analysis. The proposed model includes an interface layer modeled as a mixture of SiO₂ and Si phases. A part of the interface layer could not be removed by wet-etching, signifying the distinct features of the interface layer that are difficult to remove. The proposed model is anticipated to be practical for in-line monitoring of plasma-induced damage.