Numerical Analysis of the Boundary Scattering Effect on Transport Properties in Bi-Sb Nanowires

In this study, we have numerically analyzed the transport properties of Bi-Sb nanowires, taking into account wire boundary scattering. Wire boundary scattering slightly decreased the Seebeck coefficient of Bi-Sb nanowires. This effect is due to the observation that boundary scattering and the mobility ratio of L-point electrons to T-point holes in the nanowires are smaller than those in bulk Bi-Sb because the wire boundary scattering suppresses the mobilities of L-point electrons and heavy holes. The largest Seebeck coefficient for all wire diameters was obtained when the Sb concentration was 5 at.%. The effective mass approached zero near 5 at.% Sb, and the small effective mass led to a large subband shift in each band. Thus, a small effective mass enhances the quantum effect at a fixed wire diameter, even if wire boundary scattering is taken into account.     

Explanation of impact load curve in ball impact test in relation to thermal aging

Solder joints are required to have high impact strength for use in portable electronic products. To make solder joints with high impact strength, qualitative evaluation methods of impact strength are required. Ball impact tests have been widely adopted in evaluating the impact strength of solder joints because of their easy implementation. Impact load curves obtained from ball impact tests are used as an evaluation indicator of impact strength of solder joint. However, a relation between fracture behavior and impact load curve has not yet been clarified, and an explanation of the impact load curve has not yet been provided in detail. In addition to this, detailed study about the relation between IMC layer thickness and impact strength has not been performed, although the IMC layer thickness formed at the interface would significantly affect the impact strength of the solder joint. This study aimed to explain the impact load curve in the ball impact test and to reveal the effect of the IMC layer thickness on the impact strength of the solder joint. Sn–3.0Ag–0.5Cu solder was reflowed on an electroless Ni–P plated Cu substrate (Ni–P), and a ball impact test was then carried out to evaluate the impact strength. This study found that the ball impact test is effective to evaluate the interfacial strength of solder joints. In the impact load curve, it is estimated that the solder bump keeps deforming until the interfacial crack initiates (maximum load), and the interfacial crack initiates after the maximum load and propagates along the interface between the solder and Ni–P. The suitable evaluation of impact strength became possible by measuring the correspondence relation between the deformation distance of the solder bump after fracture and the energy until maximum load and the relation between the area fraction of the residual solder on the fractured pad and the energy after maximum load. And, it is proved that the impact strength decreased with increasing aging time because the growth of the IMC layer remarkably degraded the interfacial strength of the solder joint.     

Fast modular multiplications based on precomputations with lessmemory

A fast modular multiplication method based on precomputation is proposed for use in public-key cryptosystems. The proposed method can compute the Montgomery reduction TR¹ mod N only through additions. Furthermore, this is 6.4 times faster than the Montgomery method implemented in modular reduction with a 512 bit modulus when 2.1 MB of memory is used. This memory size is also only 1/4 of that required in the method proposed by Takenaka et al     

Three replacement models with two kinds of damage

This paper proposes three replacement policies for a modified cumulative damage model. An item receives shocks and suffers two kinds of damage: one is produced by shocks and the other increases with time at constant rate a. It fails only when the total damage exceeds a failure level K at some shock and is replaced before failure at time T, at shock N, or at damage k. The expected cost rates of three replacement policies are obtained. When shocks occur in a Poisson process, optimal T^*, N^* and k^* which minimize them are computed numerically. Finally, two extended cases where a is a function of time and K is a random variable are also considered.     

Development of 170 GHz/500 kW gyrotron

A development of 170GHz/500kW level gyrotron was carried out as R&D work of ITER. The oscillation mode is TE_31,8. In a short pulse experiment, the maximum power of 750kW was achieved at 85kV/40A. The efficiency was 22%. In the depressed collector operation, 500kW/36%/50ms was obtained. The maximum efficiency of 40% was obtained at P_RF=470kW whereas the power decrease by the electron trapping was observed. Pulse extension was done up to 10s at P_RF=170kW with the depressed collector operation. The power was limited by the temperature increase of the output window.     

Photolithographic patterning of organic photodetectors with a non-fluorinated photoresist system

We report on the fabrication of organic photodetectors (OPD) based on isolated islands of P3HT:PCBM. Pattern transfer to the active material was done with photolithography based on non-fluorinated solvents and the excessive organic semiconductor was removed with oxygen plasma reactive ion etching. The photoresist system used was found to be benign to the P3HT:PCBM layer as confirmed by absorption, thickness and roughness measurements. Current–voltage characteristics and external quantum efficiency (EQE) remained unchanged after the patterning process. It was demonstrated that it is possible to photolithographically pattern isolated islands with 200 μm edge length with the same dark current density (<10⁻⁵ A/cm² at −2 V bias voltage) and photocurrent density (>5 × 10⁻³ A/cm² at −2 V). Furthermore, concerning the solar cell performance, the patterned, small-area devices showed power conversion efficiency of 2.1% and fill-factor of 60%. Dark current was observed to depend on the size of the remaining semiconductor island, which was demonstrated on OPDs with diameter of 50 μm. The presented results show the feasibility of fabrication of isolated devices based on organic semiconductors patterned with non-fluorinated photolithography.     

Design strategy and development of spherical silicon solar cell with semi-concentration reflector system

Structural and economical merits of a spherical silicon solar cell with semi-concentration reflector system have been discussed. The roles of the reflector system have been clarified; the reflector improves short-circuit current density and also open-circuit voltage by 4–6 times concentration to make a light irradiation area comparable to a p–n junction area. We have theoretically demonstrated that the spherical Si solar cell with semi-concentration reflector system can realize a performance comparable to that of conventional Si solar cells, with less amount of silicon material use.     

An evaluation method of the fluctuation characteristics of photovoltaic systems by using frequency analysis

Short-time fluctuations in solar irradiance will become an important issue with regard to future embedded photovoltaic (PV) systems. However, when PV systems are intensively installed, fluctuation of total output in clustered PV systems is not remarkable because there is the smoothing effect of irradiance in certain areas. In this paper, a new estimation method of irradiance fluctuation, which is based on the combination of the Fourier transform and the wavelet transform methods, is described.     

Photovoltaic characteristics of phosphorus-doped amorphous carbon films grown by r.f. plasma-enhanced CVD

The phosphorus-doped amorphous carbon (n-C:P) films were grown by r.f. power-assisted plasma-enhanced chemical vapor deposition at room temperature using solid phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density (J_sc), open circuit current voltage (V_oc), fill factor (FF) and conversion efficiency (η) along with the spectral response are reported for the fabricated carbon based n-C:P/p-Si heterojunction solar cell were measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm², 25 °C). The maximum of V_oc and J_sc for the cells are observed to be approximately 236 V and 7.34 mA/cm², respectively for the n-C:P/p-Si cell grown at lower r.f. power of 100 W. The highest η and FF were found to be approximately 0.84% and 49%, respectively. We have observed the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.