Radical polymerization of methyl methacrylate with methyl 2,2-dimethyl-3,3-diphenyl-3-cyanopropionate as a thermal iniferter

Summary To clarify the mechanism of living radical polymerization of methyl methacrylate (MMA) with tetraphenylsuccinodinitrile (TPSN) as a thermal iniferter, a model compound for the end group of the poly(MMA) produced, methyl 2,2-dimethyl-3,3-diphenyl-3-cyanopropionate (2), was synthesized and found to initiate a living radical polymerization of MMA, indicating that the hexa-substituted C-C bond in 2 dissociated into radicals. The poly(MMA) thus obtained further initiated the radical polymerization of styrene (St) to give a block copolymer.     

Surface shape measurement by phase-shifting digital holography with a wavelength shift

Surface contouring by phase-shifting digital holography is proposed and verified by experiments and numerical simulations. Digital holograms are recorded before and after mode hopping of a laser diode subject to current tuning, and the difference of the reconstructed phases at each wavelength is computed to deliver surface contours of a diffusely reflecting surface. Since normal incidence on the object is employed, the method does not need the removal of the tilt component and is free from the shadowing effect as advantages over the dual-incidence method proposed before by the first author.     

High-Temperature Active Oxidation of Chemically Vapor-Deposited Silicon Carbide in CO─CO2 Atmosphere

Active oxidation behavior of CVD-SiC in CO─CO₂ atmospheres was investigated using a thermogravimetric technique in the temperature range between 1823 and 1923 K. The gas pressure ratio, P _CO2/ P _CO, was controlled between 10⁻⁴ and 10⁻¹ at 0.1 MPa. Active oxidation rates (mass loss rates) showed maxima at a certain value of P _CO2/ P _CO, ( P _CO2/ P _CO )^*, In a P _CO2/ P _CO region lower than the ( P _CO2/ P _CO)^* a carbon layer was formed on the SiC surface. In a P _CO2/ P _CO region higher than the ( P _CO2/ P _CO)^*, silica particles or a porous silica layer was observed on the SiC surface.     

A TEM study on melt-crystallized poly(butylene terephthalate)

A study was made to investigate an optimum condition for ruthenium tetraoxide staining of poly(butylene terephthalate) (PBT) with glass transition temperature as low as ca. 23 degrees C for TEM observation of melt-grown PBT crystals. The morphological study of ultrathin sections prepared based on optimum staining at 25 degrees C for 8 h revealed formation of fringed-micellar crystal nuclei in the early stage and folded-chain fringed-micellar crystals in the later stage of isothermal crystallization at 40 degrees C from melt. The fraction of chain-folded crystals increased with increasing crystallization temperature from the quantitative analysis of crystal thickness in comparison with the reported morphology using the replica method.     

Switching characteristics of vacuum gap switch employing UV‐laser triggering

The switching time and arc‐ignition probability of a sustained main discharge in a laser trigger vacuum gap were measured. The third harmonic beam of an Nd:YAG pulse laser (wavelength 355 nm, energy 5 mJ/pulse, power density 4 × 10⁷ W/cm²) was used to trigger the gap. The main electrodes 85 mm in diameter were made of oxygen‐free copper. The gap length was 1.6 mm and the experimental chamber was evacuated to about 1.3 × 10⁴ Pa by a turbomolecular pump. The UV beam from the laser was focused at normal incidence onto the grounded cathode. The switching time decreased and the arc‐ignition probability increased with increasing applied voltage. The switching time was 326 ns at 15 kV with a circuit inductance of 107 μH. Its jitter was 24.8 ns. The advantageous results obtained with the UV beam are compared to the previously reported data on triggered vacuum gaps. © 2000 Scripta Technica, Electr Eng Jpn, 132(3): 8–13, 2000     

Automated X‐ray inspection method for fillet‐less mounted chip components

Chip components mounted on the printed circuit board are rapidly being miniaturized. Furthermore, the fillet‐less chip soldering technique, which does not use a solder fillet, is widely used in portable products such as mobile phones. However, there is no method to inspect the soldering of fillet‐less chip mounting. In this paper, we propose an automated X‐ray inspection technique for fillet‐less chip mounting. It extracts three inspection parameters from the X‐ray image. In the experiments, we evaluate the repeatability and inspecting ability of the technique and confirm that sufficient information for failure detection is obtained. An automated X‐ray inspection system using this technique is now in operation at some factories, so in conclusion our automated method would be useful in practice. Copyright © 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Study on estimating electric potential in space between parallel electrodes

We have been studying on estimating distribution of permittivity between measurement electrodes using capacitance and electric potential. Two arc electrodes were separated by long distance and there electrodes were surrounded by additional electrodes respectively. In past research work, we carried out numerical electric analysis for calculating the capacitance and electric potential using Finite Element Method (FEM) and compared with experimental and numerical results. The capacitance values were almost agreed with experimental and numerical results. However, the electric potential values were different between experimental and numerical results in conventional studies. In this paper, we proposed an equivalent circuit including the stray capacity and measurement method for capacitance, the electric potential in space between long distance electrodes was estimated.     

Experimental validation with field circuit by changing start voltage of salient pole synchronous motor

This paper reports on the experimental validation characteristics of a salient pole synchronous motor with the starting field circuit in contact. The starting characteristics were experimentally evaluated at voltages of 100%, 75%, and 50% using a 1.5 kVA salient pole synchronous motor. The signal for pulling into step was applied to the field circuit by using the control module for all test conditions. The results confirmed the proper pulling into step at 100% of voltage, and the results of the tests at 50% and 75% of voltage revealed that the pulling into step under these conditions becomes stable at the suitable slip condition.     

International comparison of standard systems for impulse current measurement

The impulse current test is an important test that is used for the evaluation of lightning protection equipment. The quality of the test greatly depends on the measuring system. Some countries already have their own standard measuring systems. Standard systems are under construction in Japan and Korea. According to the international standard on high‐voltage test techniques, a comparison test is needed to confirm the impulse parameters which have traceability or compatibility with the standard values. Different from intercomparison of impulse voltage measuring systems, Japan and Korea have not conducted an international comparison test for impulse current measuring systems. Now we have jointly conducted a comparison test for impulse current measurement. As a result, it was confirmed that the system of Japan is compatible with that of Korea, which is traceable to another foreign national standard. In this paper, the result of the comparison test between two countries is described. © 2011 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Temperature measurement at flip chip solder joint during electromigration test

Measuring the real temperature of a flip chip solder joint during an electromigration test has been a problem because of its small size and the local Joule heating due to a large applied current. A unique method that employs the electrical resistance change in the junction line between two solder joints was introduced to determine the temperature of the solder joint. The change in resistance was converted into temperature using a thermal coefficient of resistance of the junction line. The method accurately measured temperatures of the solder joint within 2 K until the solder joint resistance change ratio reached 100% due to growth of an electromigration void.