Development of flexible displays using back‐channel‐etched In–Sn–Zn–O thin‐film transistors and air‐stable inverted organic light‐emitting diodes

We developed flexible displays using back‐channel‐etched In–Sn–Zn–O (ITZO) thin‐film transistors (TFTs) and air‐stable inverted organic light‐emitting diodes (iOLEDs). The TFTs fabricated on a polyimide film exhibited high mobility (32.9 cm²/Vs) and stability by utilization of a solution‐processed organic passivation layer. ITZO was also used as an electron injection layer (EIL) in the iOLEDs instead of conventional air‐sensitive materials. The iOLED with ITZO as an EIL exhibited higher efficiency and a lower driving voltage than that of conventional iOLEDs. Our approach of the simultaneous formation of ITZO film as both of a channel layer in TFTs and of an EIL in iOLEDs offers simple fabrication process.     

Preparation of a single-chain variable fragment and a recombinant antigen-binding fragment against the anti-malarial drugs, artemisinin and artesunate, and their application in an ELISA

Two different recombinant antibodies, a single-chain variable fragment (scFv) and an antigen-binding fragment (Fab), were prepared against artemisinin (AM) and artesunate (AS) and were developed for use in an enzyme-linked immunosorbent assay (ELISA). The recombinant antibodies, which were derived from a single monoclonal antibody against AM and AS (mAb 1C1) prepared by us, were expressed by Escherichia coli cells and their reactivity and specificity were characterized. As a result, to obtain sufficient signal in indirect ELISA, a much greater amount of a first antibody was needed in the use of scFv due to the differences of the secondary antibody and conformational stability. Therefore, we focused on the development of the recombinant Fab antibodies and applied it to indirect competitive ELISA. The specificity of the Fab was similar to that of mAb 1C1 in that it showed specific reactivity toward AM and AS only. The sensitivity of the icELISA (0.16 μg/mL to 40 μg/mL for AM and 8.0 ng/mL to 60 ng/mL for AS) was sufficient for analysis of antimalarial drugs, and its utility for quality control of analysis of Artemisia spp. was validated. The Fab expression and refolding systems provided a good yield of high-quality antibodies. The recombinant antibody against AM and AS provides an essential component of an economically attractive immunoassay and will be useful in other immunochemical applications for the analysis and purification of antimalarial drugs.     

III-V complementary metal-oxide-semiconductor electronics on silicon substrates

One of the major challenges in further advancement of III-V electronics is to integrate high mobility complementary transistors on the same substrate. The difficulty is due to the large lattice mismatch of the optimal p- and n-type III-V semiconductors. In this work, we employ a two-step epitaxial layer transfer process for the heterogeneous assembly of ultrathin membranes of III-V compound semiconductors on Si/SiO(2) substrates. In this III-V-on-insulator (XOI) concept, ultrathin-body InAs (thickness, 13 nm) and InGaSb (thickness, 7 nm) layers are used for enhancement-mode n- and p- MOSFETs, respectively. The peak effective mobilities of the complementary devices are ～1190 and ～370 cm(2)/(V s) for electrons and holes, respectively, both of which are higher than the state-of-the-art Si MOSFETs. We demonstrate the first proof-of-concept III-V CMOS logic operation by fabricating NOT and NAND gates, highlighting the utility of the XOI platform.     

Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors

As of yet, III-V p-type field-effect transistors (p-FETs) on Si have not been reported, due partly to materials and processing challenges, presenting an important bottleneck in the development of complementary III-V electronics. Here, we report the first high-mobility III-V p-FET on Si, enabled by the epitaxial layer transfer of InGaSb heterostructures with nanoscale thicknesses. Importantly, the use of ultrathin (thickness, ~2.5 nm) InAs cladding layers results in drastic performance enhancements arising from (i) surface passivation of the InGaSb channel, (ii) mobility enhancement due to the confinement of holes in InGaSb, and (iii) low-resistance, dopant-free contacts due to the type III band alignment of the heterojunction. The fabricated p-FETs display a peak effective mobility of ~820 cm(2)/(V s) for holes with a subthreshold swing of ~130 mV/decade. The results present an important advance in the field of III-V electronics.     

Characterisation of a TES-Based X-ray Microcalorimeter in the Energy Range from 150 to 1800 eV Using an Adiabatic Demagnetisation Refrigerator

We characterised a TES-based X-ray microcalorimeter in an adiabatic demagnetisation refrigerator (ADR) using synchrotron radiation. The detector response and energy resolution was measured at the beam-line in the PTB radiometry laboratory at the electron storage ring BESSY II in the range from 200 to 1800 eV. We present and discuss the results of the energy resolution measurements as a function of energy, beam intensity and detector working point. The measured energy resolution ranges between 1.5 to 2.1 eV in the investigated energy range and is weakly dependent on the detector set point. A first analysis shows a count-rate capability, without considerable loss of performance, of about 500 counts per second.      

Development of High Count-Rate Digital Processing System with SpaceWire for TES-Calorimeter Array

A digital processing system for a TES microcalorimeter array is being developed based on “SpaceWire” interface. In this system, we introduced a trigger logic which can handle double-pulse events due to high count rate in future X-ray missions and several application on the ground experiments. The detailed design and performance of this system is described.      

Performance Measurement of the 8-Input SQUIDs for TES Frequency Domain Multiplexing

We report on performance of 8-input superconducting quantum interference devices (SQUIDs) for multiplexing transition-edge sensor signals by using frequency-domain multiplexing. We found the typical critical current and the flux noise to be 17–19 μA and 0.7–1.1 μ , respectively. We also measured the crosstalk current between the input coils of the SQUIDs, and found that the mutual inductance was consistent with the design value, 800 pH. We confirmed that the cross talk current due to the mutual inductance was reduced by the flux-locked-loop (FLL) feedback, and its reduction rate was consistent with 1/(1+ℒ), where ℒ is the FLL feedback gain. We also show the result of 2-channel DC-driven TES signals readout using the 8-input SQUIDs.      

Preparation of new zirconium phosphates by solvothermal reaction

Two types of new zirconium phosphates, [enH₂]Zr(OH)(PO₄)(HPO₄) (en; ethylene diamine) and (NH₄)₅[Zr₃(OH)₉(PO₄)₂(HPO₄)] were prepared under solvothermal condition using diethylene glycol as a solvent and their crystal structures were determined by using single crystal X-ray diffraction data. The former compound has the layer structure similar to that of γ-Zr(PO₄)(H₂PO₄) · 2H₂O, and protonated ethylene diamines were located in the interlayer space. At elevated temperatures, this compound decomposed by releasing protonated ethylene diamines and finally changed to ZrP₂O₇. The interlayer space was soft-chemically inactive unlike α-Zr(HPO₄)₂ · H₂O and γ-Zr(PO₄)(H₂PO₄) · 2H₂O. The later compound has the tunnel structure built up by corner-sharing ZrO₆ octahedra and PO₄ tetrahedra, and NH₄ ⁺ ion was located in the tunnel.     

pH-dependent network formation of quantum dots and fluorescent quenching by Au nanoparticle embedding

A simple approach to the creation of colloidal assemblies is in high demand for the development of functional devices. Here, we present the preparation of CdTe-QD (quantum dot) networks in as little as 1 day simply by pH modification without the use of oxidants. The QD network was tractable in water and casting from a droplet produced a porous networked film on both hydrophobic and hydrophilic solid substrates. Further, we found that citrate-protected gold nanoparticles (AuNPs, d = 5 nm) could be incorporated into the QD networks to afford a QD/Au composite network, and that the fluorescence from the QDs was largely decreased by the addition of a small proportion of AuNPs (QD:AuNP = 99.4:0.6), probably due to the efficient charge transfer through the network. These data indicate that our method is suitable for application to the creation of metal/QD hybrid materials that can be integrated into wet-based processes.