Synthesis,characterization, and dielectric properties of Y2NiMnO6 ceramics prepared by a simple thermal decomposition route

In attempt to search for an improved material preparation technique, Y₂NiMnO₆ dielectric material is prepared by a one-step thermal decomposition route where a solution of stoichiometric mixtures of metal acetates is directly heated. Structural characterization by X-ray diffraction and electron diffraction shows that the samples were successfully prepared at relatively low temperature comparing to a standard solid state synthesis. Results from several techniques including thermal analysis, electron microscopy, and X-ray absorption are used to investigate compound formation. It is revealed that metal acetates decompose at 300–350 °C resulting in mixture of several metal oxide intermediates which continue to react to form the desired product. Y₂NiMnO₆ nanoparticles are first obtained at 800 °C. Later, these nanoparticles agglomerate and grow at higher temperature and/or longer heating time to give larger particle size and more crystallinity. Although the starting reagent contains Mn in 2+ oxidation state, X-ray absorption near edge structure analysis indicates that the obtained Y₂NiMnO₆ contain Mn and Ni in 4+/3+ and 2+ oxidation states, respectively. Ceramic sample shows large dielectric constant of about 6,000–7,000 at 30–120 °C at 1 kHz. Dielectric constant and dielectric response of the sample are consistent with those reported in other works where different synthetic techniques were used. The activation energy of dielectric relaxation is similar to the energy required to transfer electrons between Ni²⁺ and Mn⁴⁺, thus the observed large dielectric constant is intrinsically related to electronic ferroelectricity due to charge ordering of Ni²⁺ and Mn⁴⁺.     

CoFe_2O_4-BaTiO_3颗粒复合材料的频率相关电磁性能

通过湿法球磨制备CoFe2O4-BaTiO3颗粒复合材料,研究材料成分和调制频率与电磁效应的关系。结果表明：电磁效应系数随着调制频率由400Hz增加到1000Hz而增加。由于CoFe2O4的电导率在400-1000Hz范围内对频率敏感,电磁效应的曲线特性而发生改变。在烧结过程中形成第三相Ba2Fe2O5,从而导致电磁效应的下降。     

Giant dielectric and electrical properties of sodium yttrium copper titanate: Na<Subscript>1/2</Subscript>Y<Subscript>1/2</Subscript>Cu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript>

The electrical properties and dielectric response in Na_1/2Y_1/2Cu₃Ti₄O₁₂ ceramic prepared by conventional solid-state reaction method and sintered at 1,090 °C for 5 h were investigated as functions of frequency and temperature. Main phase of Na_1/2Y_1/2Cu₃Ti₄O₁₂ with CaCu₃Ti₄O₁₂-like crystallographic structure and CuO secondary phase were observed in the X-ray diffraction pattern. Abnormal grain growth was observed just as observed in CaCu₃Ti₄O₁₂ ceramics. The Na_1/2Y_1/2Cu₃Ti₄O₁₂ ceramic exhibits a high ε′ of ~2.04 × 10⁴ at 20 °C and 1 kHz and low tan δ (with the minimum 0.080 at 5 kHz). Impedance spectroscopy analysis reveals that Na_1/2Y_1/2Cu₃Ti₄O₁₂ ceramic is electrically heterogeneous, consisting of semiconducting grains and insulating grain boundaries. Giant ε′ response in Na_1/2Y_1/2Cu₃Ti₄O₁₂ ceramic is therefore attributed to an internal barrier layer capacitor effect.     

CaCu3Ti4O12 nanoparticles using polyvinyl pyrrolidone: synthesis and dielectric properties

Nanocrystalline CaCu3Ti4O12 powders with particle sizes of 39.28 8.12 nm were synthesized by a simple modify sol-gel using PVP (Poly-vinyl-pyrrolidone). The synthesized precursor was characterized by TG-DTA to determine the thermal decomposition and crystallization temperature which was found to be at above 500 degrees C. The precursor was calcined at 800 degrees C in air for 8 h to obtain nanocrystalline powders of CaCu3Ti4O12. The calcined CaCu3Ti4O12 powders were characterized by XRD, FTIR, SEM and TEM. Sintering of the powders was conducted in air at 1100 degrees C for 16 h. The XRD results indicated that all sintered samples have a typical perovskite CaCu3Ti4O12 structure and a small amount of CaTiO3. SEM micrographs showed the average grain sizes of 1.86 +/- 0.69 /m for the sintered CaCu3Ti4O12 ceramic prepared using the CaCu3Ti4O12 powders calcined at 800 degrees C. The sintered samples exhibit a giant dielectric constant, epsilon' of approximately 10(3)-10(4). The large low-frequency dielectric permittivity at low temperature is closely related to sub-grain boundary distribution, including conductivity effect. Furthermore, the ceramic shows three semicircles in the complex impedance plane. However, at low frequency, semicircles of sub-grain boundary and grain boundary are considered to represent collapse different electrical mechanisms. The another is ascribed to the contribution of grain. The dielectric behavior at several frequencies and temperatures of these samples can be attributed to electronic inhomogeneities present in material and can be explained based on a microstructural model.     

Effects of Mn Doping on the Dielectric Relaxations and Dielectric Response in Multiferroic BiFeO3 Ceramics

We report the influences of Mn doping on the dielectric relaxation properties of multiferroic BiFeO₃ ceramics. The dielectric permittivity of the BiFeO₃ ceramic is suppressed by doping with Mn ions, which are suitably associated with the increase of the resistance and conduction activation energy of the bulk ceramic. Three sets of dielectric relaxations observed in the BiFeO₃ ceramic are concealed to a single set of dielectric relaxation in the BiFe_0.95Mn_0.05O₃ ceramic. The dielectric relaxation behavior of these ceramics might be ascribed based on the charge carriers hopping and/or the present of oxygen vacancies inside the grains.     

Yield improvement analysis with parameter-screening factorials

This paper presents a technique for the critical parameter analysis of the disk drive manufacturing process. The objective of the work is to improve the manufacturing yield by tuning the parameters that significantly affect the yield. Several techniques were studied including the sensitivity analysis framework, which is currently used at several disk drive plants. From our initial experiments, we found that the sensitivity analysis results were not sufficiently good and the interactions between parameters were not identified. We then designed a new technique based on factorial designs, the parameter-screening factorials algorithm. Our method can work with a large number of inputs within reasonable computing time, and can identify both the parameter and the interaction effects. The results can be obtained more quickly and are better in comparison with the currently used technique. Moreover, by applying the technique to the full list instead of the pre-selected list of the manufacturing parameters, we discovered that the parameters watch list previously identified by the experts should be adjusted to include some extra parameters. After the results were validated by the experts, we designed software that automates the critical parameter analysis process. The software should greatly benefit the daily yield analysis at the disk drive manufacturing plant greatly.     

Enhancement of giant dielectric response in Ga-doped CaCu3Ti4O12 ceramics

The influences of Ga³⁺ doping ions on the microstructure, dielectric and electrical properties of CaCu₃Ti₄O₁₂ ceramics were investigated systematically. Addition of Ga³⁺ ions can cause a great increase in the mean grain size of CaCu₃Ti₄O₁₂ ceramics. This is ascribed to the ability of Ga³⁺ doping to enhance grain boundary mobility. Doping CaCu₃Ti₄O₁₂ with 0.25 mol% of Ga³⁺ caused a large increase in its dielectric constant from 5439 to 31,331. The loss tangent decreased from 0.153 to 0.044. The giant dielectric response and dielectric relaxation behavior can be well described by the internal barrier layer capacitor model based on Maxwell?Wagner polarization at grain boundaries. The nonlinear coefficient, breakdown field, and electrostatic potential barrier at grain boundaries decreased with increasing Ga³⁺ content. Our results demonstrated the importance of ceramic microstructure and electrical responses of grain and grain boundaries in controlling the giant dielectric response and dielectric relaxation behavior of CaCu₃Ti₄O₁₂ ceramics.     

Improved dielectric and non-ohmic properties of Ca2Cu2Ti4O12 ceramics prepared by a polymer pyrolysis method

Non-ohmic and dielectric properties of Ca₂Cu₂Ti₄O₁₂ (CaCu₃Ti₄O₁₂/CaTiO₃ composite) ceramics prepared by a polymer pyrolysis method (PP-ceramic samples) are investigated. The PP-ceramics show a highly dense structure and improved non-ohmic and dielectric properties compared to the ceramics obtained by a solid state reaction method (SSR-ceramic samples). ?′ (tan δ) of the PP-ceramic samples is found to be higher (lower) than that of the SSR-ceramic samples. Interestingly, the PP-ceramic sintered at 1050 °C for 10 h exhibits the high ?′ of 2530 with weak frequency dependence below 1 MHz, the low tan δ less than 0.05 in the frequency range of 160 Hz-177 kHz, and the little temperature coefficient, i.e., |Δ?′| ≤ 15 % in the temperature range from −55 to 85 °C. These results indicate that the CaCu₃Ti₄O₁₂/CaTiO₃ composite system prepared by PP method is a promising high-?′ material for practical capacitor application.     

Modified giant dielectric properties of samarium doped CaCu3Ti4O12 ceramics

Effects of Sm³⁺ substitution on the microstructure and dielectric properties of CaCu₃Ti₄O₁₂ ceramics were investigated. The grain size of CaCu₃Ti₄O₁₂ ceramics was greatly decreased by doping with Sm³⁺, resulting from the ability of Sm³⁺ to inhibit the grain growth rate. This result can cause a decrease in the dielectric constant (?′) and loss tangent (tan δ) of CaCu₃Ti₄O₁₂ ceramics. Interestingly, high dielectric permittivity (?′ ～ 10,863) and low loss tangent (tan δ ～ 0.043 at 20 °C and 1 kHz) were observed in the Ca_0.925Sm_0.05Cu₃Ti₄O₁₂ ceramic. Nonlinear electrical properties of CaCu₃Ti₄O₁₂ ceramics were modified by doping with Sm³⁺. The dielectric relaxation behavior of Sm-doped CaCu₃Ti₄O₁₂ ceramics can be well ascribed based on the internal barrier layer capacitor model of Schottky barriers at the grain boundaries.