A less invasive Emax estimation method for weaning fromcardiac assistance

The maximum elastance of the ventricle (E_max) is a strong candidate for a quantitative index used for determination of the timing of weaning the patient from a left ventricular assist device (LVAD). The authors present a new and less invasive method for deriving E_max of the left ventricle under the LVAD assistance. In this method (the CoP method), E_max can be calculated from two different end-systolic points which are produced by changing the drive phase of LVAD without any vascular clamping and any direct measurement of the left ventricular volume. Animal experiments indicated that the CoP method is useful when the measured left ventricular flow and pressure are employed. Moreover, a new technique for estimating the left ventricular flow was developed to make the CoP method less invasive without direct measurement of the flow. The technique could considerably improve the estimation accuracy of the flow in the co-pulsation mode in comparison with the previous one proposed by the authors. However, it has been revealed that the estimation accuracy of the left ventricular flow was not globally high enough to apply the CoP method to clinical cases in spite of its much less invasiveness     

A 16-ns 1-Mb CMOS EPROM

A 16-ns 1-Mb CMOS EPROM has been developed utilizing high-speed circuit technology and a double-metal process. In order to achieve the fast access time, a differential sensing scheme with address transition detection (ATD) is used. A double-word-line structure is used to reduce word-line delay. High noise immunity is obtained by a bit-line bias circuit and data-latch circuit. Sufficient threshold voltage shift (indispensable for fast access time) is guaranteed by a threshold monitoring program (TMP) scheme. The array is organized as 64 K×16 b, which is suitable for 32-b high-performance microprocessors. The active power is 425 mW, the programming time is 100 μs, and the chip size is 4.94×15.64 mm²     

Transmission Characteristics of Hybrid Modes in Corrugated Waveguides Above the Bragg Frequency

We studied the transmission characteristics of hybrid modes in a corrugated circular waveguide above the Bragg frequency to develop a broad-band transmission line for millimeter waves. Millimeter waves at 294 GHz were transmitted into a straight waveguide. From observed power profiles in waveguide cross-sections, a high attenuation rate of 0.13 dB/m was obtained. To match a theoretical attenuation constant with the experimental one, we introduced an ad hoc coefficient of conventional surface reactance in the waveguide wall. This was necessary because the wall began to look like the surface with a decreasing anisotropic reactance owing to the frequency above the Bragg frequency. Using nonlinear optimization for mode content analysis, the observed power profiles in the waveguide cross-section were matched with theoretical profiles. There was good agreement between the calculated and observed centers of power profiles and attenuation rate along the waveguide. The theoretical analysis showed that the magnetic field at the waveguide wall increases and the substantial attenuation takes place. Above the Bragg frequency coupling to backwards propagating modes is a point of consideration. A combination of the backwards propagating EH_1,26 and the forward propagating HE₁₁ modes satisfied the Bragg condition at 294.7 GHz which was the nearest frequency of operating frequency. A strong attenuation of the incoming HE₁₁ mode by Bragg resonance was not expected due to large difference of 0.7 GHz. It becomes clear that the observed high transmission loss outside of the Bragg resonance can be explained by a decrease in anisotropic surface reactance at the wall.     

Two Step Timing Synchronization Scheme for OFDM Signal in General Purpose Processor Based Software Defined Radio Receiver

Software defined radio (SDR) is a technology that allows a single terminal to support various kinds of wireless systems by changing its software to reconfigure itself. A general purpose processor (GPP) based SDR receiver platform named Sora has been recently developed by Microsoft. In the GPP based SDR receiver, timing synchronization of an OFDM signal consumes a significant amount of computational resources in the GPP. In this paper, a timing synchronization scheme which uses delayed correlation and matched filtering for the GPP based SDR platform is evaluated. The two stage timing synchronization scheme reduces the computational complexity by limiting the timing range of matched filtering. The proposed scheme reduces the amount of data transmission between the memory and the GPP of the SDR platform. It is shown through an experiment that the proposed scheme reduces the number of cycles for timing synchronization by up to 30 %.     

High Precision,Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models

We report a novel hybrid charge sensor realized by the deposition of phospholipid monolayers on highly doped n‐GaN electrodes. To detect the binding of recombinant proteins with histidine‐tags, lipid vesicles containing chelator lipids were deposited on GaN electrodes pre‐coated with octadecyltrimethoxysilane monolayers. Owing to its optical transparency, GaN allows the confirmation of the fluidity of supported membranes by fluorescence recovery after photo‐bleaching (FRAP). The electrolyte‐(organic) insulator‐semiconductor (EIS) setup enables one to transduce variations in the surface charge density ΔQ into a change in the interface capacitance ΔC _p and, thus, the flat‐band potential ΔU _FB. The obtained results demonstrate that the membrane‐based charge sensor can reach a high sensitivity to detect reversible changes in the surface charge density on the membranes by the formation of chelator complexes, docking of eGFP with histidine tags, and cancellation by EDTA. The achievable resolution of ΔQ ≥ 0.1 μC/cm² is better than that obtained for membrane‐functionalized p‐GaAs, 0.9 μC/cm², and for ITO coated with a polymer supported lipid monolayer, 2.2 μC/cm². Moreover, we examined the potential application of optically active InGaN/GaN quantum dot structures, for the detection of changes in the surface potential from the photoluminescence signals measured at room temperature.     

A Water‐Soluble Mechanochromic Luminescent Pyrene Derivative Exhibiting Recovery of the Initial Photoluminescence Color in a High‐Humidity Environment

Switching of the luminescence properties of molecular materials in response to mechanical stimulation is of fundamental interest and also has a range of potential applications. Herein, a water‐soluble mechanochromic luminescent pyrene derivative having two hydrophilic dendrons is reported. This pyrene derivative is the first example of a mechanochromic luminescent organic compound that responds to relative humidity. Mechanical stimulation (grinding) of this pyrene derivative in the solid state results in a change of the photoluminescence from yellow to green. Subsequent exposure to water vapor induces recovery of the initial yellow photoluminescence. The color change is reversible through at least ten cycles. It is also demonstrated that this compound can be applied as a mechano‐sensing material in frictional wear testing for grease, owing to its immiscibility in non‐polar solvents and its non‐crystalline behavior. Transmission electron microscope and atomic force microscope observations of samples prepared from dilute aqueous solutions of the pyrene derivative on suitable substrates, together with dynamic light scattering measurements for the compound in aqueous solution, indicate that this amphiphilic dumbbell‐shaped molecule forms micelles in water.     

Colored Fluorescent Silk Made by Transgenic Silkworms

Silk is a protein fiber used to weave fabrics and as a biomaterial in medical applications. Recently, genetically modified silks have been produced from transgenic silkworms. In the present study, transgenic silkworms for the mass production of three colors of fluorescent silks, (green, red, and orange) are generated using a vector originating from the fibroin H chain gene and a classical breeding method. The suitability of the recombinant silks for making fabrics is investigated by harvesting large amounts of the cocoons, obtained from rearing over 20 thousand silkworms. The application of low temperature and a weakly alkaline solution for cooking and reeling enables the production of silk fiber without loss of color. The maximum strain tolerated and Young's modulus of the fluorescent silks are similar to those of ordinary silk, although the maximum stress value of the recombinant silk is slightly lower than that of the control. Fabrics with fluorescent color are demonstrated using the recombinant silk, with the color persisting for over two years. The results indicate that large amounts of genetically modified silk can be made by transgenic silkworms, and the silk is applicable as functional silk fiber for making fabrics and for use in medical applications.     

Electrical properties of HgCdTe epilayers doped with silver using an AgNO3 solution

We employed AgNO₃ solutions for doping Ag in liquid phase epitaxy (LPE) grown Hg_0.78Cd_0.22Te epilayers and found that the minority carrier lifetimes became longer so that the diode properties improved. After annealing LPE grown Hg(1-x)Cd(x)Te layers (x=0.22) in Hg atmosphere, the epilayers were immersed in an AgNO₃ solution at room temperature. The typical carrier concentrations of holes was 3 × 10¹⁶ cm⁻³ at 77K. These values were almost the same as for the nondoped wafers. Also, its acceptor level was 3 to 4 meV. This shows that the Ag was activated. The doped crystals have lifetimes several times longer than those of the nondoped crystals. Numerical fitting showed the lifetime was limited mostly by the Auger 7 process. The Shockley-Read-Hall recombination process was not effective. To examine the Ag-doped wafer, we fabricated photodiodes using standard planar technology. The diodes have an average zero-bias resistance of several MΩ and a shunt resistance of about 1 GΩ for a 10 μm cutoff wavelength at 78K. These values are about four times higher than those of nondoped diodes. The photo current is also two times higher at the same pixel size. This shows that the quantum efficiency is increased. The extension of the lifetime contributes to the high resistance and the high quantum efficiency of the photodiode.     

Formation of uniform GaAs multi-atomic steps with 20–30 nm periodicity and related structures on vicinal (111)B planes by MBE

We studied morphology of GaAs surfaces and the transport properties of two-dimensional electron gas (2DEG) on vicinal (111)B planes. Multi-atomic steps (MASs) are found on the vicinal (111)B facet grown by molecular beam epitaxy, which will affect electron transport on the facet. We also studied how the morphology of GaAs epilayers on vicinal (111)B substrates depends on growth conditions, especially on the As₄ flux. The uniformity of MASs on the substrates have been improved and smooth surfaces were obtained when the GaAs was grown with high As₄ flux, providing step periodicity of 20 nm. The channel resistance of the 2DEG perpendicular to the MASs is reduced drastically with this smooth morphology. These findings are valuable not only for fabricating quantum devices on the (111)B facets but also those on the vicinal (111)B substrates.     

Analysis and discussion on conduction current based on simultaneousmeasurement of TSC and space charge distribution

A new analysis of conduction current distributed in dielectrics based on simultaneous measurements of thermally stimulated current (TSC) and time dependent space charge distribution is proposed. A new system pulsed electro-acoustic (PEA) method has been developed to enable simultaneous measurement of the TSC and the dynamic space charge and electric field distributions as a function of temperature within insulators. With the new system, the relationship between the TSC and the time dependent electric field distribution in electron beam (e-beam) irradiated PMMA has been investigated. From the time dependent electric field, the displacement current in dielectrics is obtained. The TSC is a typical external current which is represented as an addition of the displacement current and a conduction current in dielectrics. This paper makes it clear that the conduction current as a function of position is determined by the simultaneous measurement of the external current and the dynamic space charge distribution