A 500-MHz 4-Mb CMOS pipeline-burst cache SRAM with point-to-pointnoise reduction coding I/O

A 32-b 500-MHz 4-1-1-1 operation 4-Mb pipeline burst cache SRAM has been developed. In order to achieve both high bandwidth operation and short latency operation, we developed the following technologies: 1) a prefetched pipeline-burst scheme with double late-write buffers, 2) gate size reduction and a bit-line equalization by source resetting, 3) point-to-point bidirectional coding I/O's to reduce bus noise and power consumption, and 4) a three-level metal 0.25-μm CMOS process technology with six transistor memory cells     

A 120-mm2 64-Mb NAND flash memory achieving 180 ns/Byteeffective program speed

Emerging application areas of mass storage flash memories require low cost, high density flash memories with enhanced device performance. This paper describes a 64 Mb NAND flash memory having improved read and program performances. A 40 MB/s read throughput is achieved by improving the page sensing time and employing the full-chip burst read capability. A 2-μs random access time is obtained by using a precharged capacitive decoupling sensing scheme with a staggered row decoder scheme. The full-chip burst read capability is realized by introducing a new array architecture. A narrow incremental step pulse programming scheme achieves a 5 MB/s program throughput corresponding to 180 ns/Byte effective program speed. The chip has been fabricated using a 0.4-μm single-metal CMOS process resulting in a die size of 120 mm² and an effective cell size of 1.1 μm²     

A low-resistance self-aligned T-shaped gate for high-performancesub-0.1-μm CMOS

This paper describes the high performance of T-shaped-gate CMOS devices with effective channel lengths in the sub-0.1-μm region. These devices were fabricated by using selective W growth, which allows low-resistance gates smaller than 0.1 μm to be made without requiring fine lithography alignment. We used counter-doping to scale down the threshold voltage while still maintaining acceptable short-channel effects. This approach allowed us to make ring oscillators with a gate-delay time as short as 21 ps at 2 V with a gate length of 0.15 μm. Furthermore, we experimentally show that the high circuit speed of a sub-0.1-μm gate length CMOS device is mainly due to the PMOS device performance, especially in terms of its drivability     

Photolithographic patterning of organic photodetectors with a non-fluorinated photoresist system

We report on the fabrication of organic photodetectors (OPD) based on isolated islands of P3HT:PCBM. Pattern transfer to the active material was done with photolithography based on non-fluorinated solvents and the excessive organic semiconductor was removed with oxygen plasma reactive ion etching. The photoresist system used was found to be benign to the P3HT:PCBM layer as confirmed by absorption, thickness and roughness measurements. Current–voltage characteristics and external quantum efficiency (EQE) remained unchanged after the patterning process. It was demonstrated that it is possible to photolithographically pattern isolated islands with 200 μm edge length with the same dark current density (<10⁻⁵ A/cm² at −2 V bias voltage) and photocurrent density (>5 × 10⁻³ A/cm² at −2 V). Furthermore, concerning the solar cell performance, the patterned, small-area devices showed power conversion efficiency of 2.1% and fill-factor of 60%. Dark current was observed to depend on the size of the remaining semiconductor island, which was demonstrated on OPDs with diameter of 50 μm. The presented results show the feasibility of fabrication of isolated devices based on organic semiconductors patterned with non-fluorinated photolithography.     

Evidence of Oxygen Ferromagnetism in ZnO Based Materials

Discoveries of room‐temperature ferromagnetism (RTFM) in semiconductors hold great promise in future spintronics technologies. Unfortunately, this ferromagnetism remains poorly understood and the debate concerning the nature, carrier‐mediated versus defect‐mediated, of this ferromagnetism in semiconducting oxides is still open. Here, by using X‐ray absorption (XAS) and X‐ray magnetic circular dichroism (XMCD), it is demonstrated that the oxygen ions have a ferromagnetic response in different ZnO‐based compounds showing RTFM behavior: ZnO nanoparticles capped with organic molecules and ZnO/ZnS heterostructures. These results demonstrate the intrinsic occurrence of RTFM in these systems, and point out that it is not related to the metallic cation but it relays on the conduction band of the semiconductor.     

Polarimetric Characteristics of sea ice in the sea of Okhotsk observed by airborne L-band SAR

The Phased-Array L-Band SAR (PALSAR) aboard the Advanced Land Observing Satellite (ALOS) is capable of globally acquiring fully polarimetric data. In order to confirm the ability of L-band polarimetric synthetic aperture radar (SAR) to investigate sea ice before the ALOS launch, we conducted a field experiment using an airborne Polarimetric and Interferometric SAR (Pi-SAR) in the Sea of Okhotsk in 1999. This paper presents the analyzed results of data acquired in that experiment. The extracted polarimetric parameters of several ice types suggested that polarimetric coherences and phase differences between right-right (RR) and left-left (LL) are good candidates for discriminating ice types. The polarimetric anisotropy as well as the beta angle of the first eigenvector calculated in the polarimetric decomposition procedure are alternative parameters that are sensitive to ice type differences. Due to the low depolarization characteristics of open water, it could be discriminated from sea ice by scattering entropy in all incidence angle ranges. From the relation between ice thickness and the polarimetric parameters, we found that backscattering coefficients and vertical (VV) to horizontal (HH) backscattering ratio are highly correlated with ice thickness. Since the ratio is sensitive to ice surface dielectric constants, a simple simulation using the integral equation method surface model was conducted by using the physical parameters of typical sea ice. A two-dimensional ice thickness map was derived from an empirical relation between the VV-to-HH backscattering ratio and ice thickness.     

Dynamic properties of an all solid-state frequency-shifted feedbacklaser

Frequency-shifted feedback (FSF) laser exhibits outstanding features in its oscillation spectrum. We analyze build-up dynamic properties of the FSF laser by means of rate equation and analyze steady-state dynamic properties of the FSF laser by means of Wigner-Ville distribution of intracavity electric field. Furthermore, we analyze instantaneous oscillation frequency at peak spectral intensity and oscillation bandwidth of its spectrum using the formula of instantaneous spectral intensity derived from Wigner-Ville distribution of intracavity electric field. These analytical results are in good agreement with the experimental ones which have been observed by a diode-pumped Nd:YVO₄ FSF laser. It becomes clear that the FSF laser supports many frequency components simultaneously even though the gain medium is homogeneously broadened and has a continuously chirped frequency components of comb in which the creation of chirped frequency components are strongly correlated in phase because of a replica of the preceding components. Also, the instantaneous oscillation frequency is closely related to the detuning frequency which depends on the total net gain in the cavity and the gain bandwidth of atomic transition. The oscillation bandwidth is defined as the product of the saturation-broadened bandwidth and the total resonant modes contributing to FSF operation     

A spot-size transformer based on mode interference

A novel mode-size transformer based on interference between guided and leaky modes is proposed and analyzed. Simulation shows significant improvement in spot-size transform efficiency per unit length, in comparison with the conventional tapered waveguide mode size converters based on mode evolution. Owing to its structural simplicity, easy fabrication is another merit of the new spot-size transformer     

1.5 nm direct-tunneling gate oxide Si MOSFET's

In this paper, normal operation of a MOSFET with an ultra-thin direct-tunneling gate oxide is reported for the first time. These high current drive n-MOSFET's were fabricated with a 1.5 nm direct-tunneling gate oxide. They operate well at gate lengths of around 0.1 μm, because the gate leakage current falls in proportional to the gate length, while the drain current increases in inverse proportion. A current drive of more than 1.0 mA/μm and a transconductance of more than 1,000 mS/mm were obtained at a gate length of 0.09 μm at room temperature. These are the highest values ever obtained with Si MOSFET's at room temperature. Further, hot-carrier reliability is shown to improve as the thickness of the gate oxide is reduced, even in the 1.5 nm case. This work clarifies that excellent performance-a transconductance of over 1,000 mS/mm at room temperature-can be obtained with Si MOSFET's if a high-capacitance gate insulator is used     

Preparation and properties of CuInS2 thin film prepared from electroplated precursor

Thin CuInS₂ films were prepared by sulfurization of Cu/In bi-layers. First, the precursor layer was electroplated onto the treated surface of Mo-coated glass. Observation of the cross-section prepared by focused ion beam (FIB) etching revealed that the void-free film was initially formed on the top surface of the precursor layer and continued to grow until the advancing front of the film reached the Mo layer. The nucleation of voids near the bottom of the CuInS₂ film followed. To determine whether the condition of the Cu/In alloy influences the CuInS₂ quality we investigated the Cu/In alloy state using FIB. We found that the annealed precursor of low Cu/In ratio (1.2) has several voids in the mid position in the layer compared with Cu-rich precursor (1.6). The cross-sectional view of the Cu-rich absorber layer is uniform compared with the low copper absorber layer. Thin film solar cells were fabricated using the CuInS₂ film (Cu/In ratio: 1.2) as an optical absorber layer. It was found that the optimization of a sulfurization period is important in order to improve the cell efficiency. We have not yet obtained good results with high Cu-rich absorber because of a blister problem. This blister was found before sulfurization. So, we are going to solve this blister problem before sulfurization.