Design of Fully Balanced Analog Systems Based on Ordinary and/or Modified Single-Ended Opamps

The system architectures, which allow a high performance fully balanced (FB) system based on ordinary/modified single-ended opamps to be implemented, are investigated and the basic and general requirements are formulated. Two new methods of an FB analog system design, which contribute towards achieving both a high performance IC system implementation and a great reduction of the design time are presented. It is shown that a single-ended system based on any type of opamp (rail-to-rail, constant g _m , etc.), realized in any technology (CMOS, bipolar, BiCMOS, GaAs), can be easily and effectively converted to its FB counterpart in a very practical way. Using the proposed rules, any FB system implementation with opamps (data converter, modulator, filter, etc.) requires only a single-ended system version design and the drawbacks related to a conventional FB system design are avoided. The principles of the design are pointed out and they are verified by experimental results.     

Development of a 385–500 GHz Sideband-Separating Balanced SIS Mixer

A submillimeter (385–500 GHz) low-noise sideband-separating balanced SIS (Superconductor Insulator Superconductor) mixer (Balanced 2SB mixer) with high IRR (Image Rejection Ratio) has been successfully developed, whose SSB (Single SideBand) noise temperature is ～ 200 K (10hf/k) with an image rejection ratio of ≥?～10 dB. Balanced mixers have become a promising technology which would break through the limitation especially in terahertz receivers and heterodyne arrays. However, though there are examples in microwave with relatively worse noise performance, submillimeter and terahertz balanced mixers have rarely been developed in spite of their astronomical importance. The developed balanced 2SB mixer is not only the first one demonstrated at submillimeter frequency range, but also has very low noise, high IRR, wide detectable frequencies (385–500 GHz), and a flat IF output spectrum. The balanced 2SB mixer is composed of three RF hybrids, four DSB (Double SideBand) mixers, two 180° IF hybrids, and an IF quadrature hybrid. Several important performance indicators such as noise temperature, IRR, required LO (Local Oscillator) power, and IF spectra were measured. The measured LO power required for the balanced 2SB mixer was typically ~ 14 dB less than that of the single-ended mixers.     

Colored Fluorescent Silk Made by Transgenic Silkworms

Silk is a protein fiber used to weave fabrics and as a biomaterial in medical applications. Recently, genetically modified silks have been produced from transgenic silkworms. In the present study, transgenic silkworms for the mass production of three colors of fluorescent silks, (green, red, and orange) are generated using a vector originating from the fibroin H chain gene and a classical breeding method. The suitability of the recombinant silks for making fabrics is investigated by harvesting large amounts of the cocoons, obtained from rearing over 20 thousand silkworms. The application of low temperature and a weakly alkaline solution for cooking and reeling enables the production of silk fiber without loss of color. The maximum strain tolerated and Young's modulus of the fluorescent silks are similar to those of ordinary silk, although the maximum stress value of the recombinant silk is slightly lower than that of the control. Fabrics with fluorescent color are demonstrated using the recombinant silk, with the color persisting for over two years. The results indicate that large amounts of genetically modified silk can be made by transgenic silkworms, and the silk is applicable as functional silk fiber for making fabrics and for use in medical applications.     

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (R_s) to increase at large drain bias voltages. The increase in R_s can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (R_d) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of R_s should be considered. It is also found that a deep gate recess suppresses the increase in R_d after long-term stressing.     

GPC Profile Change of Potato Starch with Extrusion Processing

Native potato starch (moisture content 15%) was treated by twin screw extruder under four operating conditions with varying barrel temperatures (110°C–230°C). These modified starch samples were compared to native and drum-dried starch. Starch sample solution for gel chromatography was prepared by the three methods (acidic, alkaline, and neutral methods). They were subjected to gel chromatography on Toyopearl HW-75, and some difference was found among the three gel chromatographic patterns obtained from the same starch solution. This discrepancy among GPC patterns suggests formation of some types of anhydro-bonds between chains of amylopectin and or amylose in the extrusion process. Elevating barrel temperature increases degree of depolymerization. The size of fragments formed with the treatment is bigger than that of oligosaccharides but smaller than that of amylose.     

On-line control of feed-speed in circular sawing

An adaptive control optimization system was developed to produce a desired surface finish roughness by automatic control of the work-piece feed-rate in circular sawing. The system developed in this study consists of the interconnection of an adaptive controller with a numerically controlled circular saw. The AE signals and cutting forces were measured to monitor the machining process continuously in this system. The signals were provided to the adaptive controller to evaluate the surface finish roughness and adjust the workpiece feed-rate automatically in the machining process. Sensing of AE signals and of cutting forces was compared to determine which technique is more convenient. Experiments were carried out with a carbide-tipped circular saw. Cross cutting was done with counter-cutting during the experiments. The cutting parameters controlled were workpiece feed-rates and cutting speeds. Japanese beech (Fagus crenata Blume) and Yezo spruce (Picea jezoensis Carr.) were used as the workpiece. Experimental results indicated that adaptive control optimization took place in the system developed for circular sawing. The desired surface finish roughness was produced by automatic control of the workpiece feed-rate using the sensing technique of AE signals as well as that of cutting force. However, the system using AE signals is more convenient than taht using cutting force.     

Thin reduced graphene oxide interlayer with a conjugated block copolymer for high performance non-volatile ferroelectric polymer memory

Polymer ferroelectric-gate field effect transistors (Fe-FETs) employing ferroelectric polymer thin films as gate insulators are highly attractive as a next-generation non-volatile memory. For minimizing gate leakage current of a device which arises from electrically defective ferroelectric polymer layer in particular at low operation voltage, the materials design of interlayers between the ferroelectric insulator and gate electrode is essential. Here, we introduce a new solution-processed interlayer of conductive reduced graphene oxides (rGOs) modified with a conjugated block copolymer, poly(styrene-block-paraphenylene) (PS-b-PPP). A FeFET with a solution-processed p-type oligomeric semiconducting channel and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) insulator exhibited characteristic source–drain current hysteresis arising from ferroelectric polarization switching of a PVDF-TrFE insulator. Our PS-b-PPP modified rGOs (PMrGOs) with conductive moieties embedded in insulating polymer matrix not only significantly reduced the gate leakage current but also efficiently lowered operation voltage of the device. In consequence, the device showed large memory gate voltage window and high ON/OFF source–drain current ratio with excellent data retention and read/write cycle endurance. Furthermore, our PMrGOs interlayers were successfully employed to FeFETs fabricated on mechanically flexible substrates with promising non-volatile memory performance under repetitive bending deformation.     

Evidence of Oxygen Ferromagnetism in ZnO Based Materials

Discoveries of room‐temperature ferromagnetism (RTFM) in semiconductors hold great promise in future spintronics technologies. Unfortunately, this ferromagnetism remains poorly understood and the debate concerning the nature, carrier‐mediated versus defect‐mediated, of this ferromagnetism in semiconducting oxides is still open. Here, by using X‐ray absorption (XAS) and X‐ray magnetic circular dichroism (XMCD), it is demonstrated that the oxygen ions have a ferromagnetic response in different ZnO‐based compounds showing RTFM behavior: ZnO nanoparticles capped with organic molecules and ZnO/ZnS heterostructures. These results demonstrate the intrinsic occurrence of RTFM in these systems, and point out that it is not related to the metallic cation but it relays on the conduction band of the semiconductor.     

Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy

Defects and stress gradually accumulate throughout various Si large-scale integration fabrication processes. It is essential to monitor defects and stress carefully to suppress their unintentional introduction. In this study, we measured the stress and crystal quality in shallow trench isolation (STI) samples by ultraviolet (UV)-Raman spectroscopy with an extremely high-resolution wavenumber to evaluate the effect of post-annealing on the recovery of Si crystals. The variations of crystal quality in 200-mm wafers with STI structures gradually decreased after post-annealing for 4 h, 6 h, and 8 h; however, there was no substantial difference in the values of full-width at half-maximum of the Raman spectra. Precise measurements of variations of stress and crystal quality were successfully performed by UV-Raman spectroscopy with a high-resolution wavenumber, which enabled us to evaluate the STI process accurately.     

Effects of sea surface temperature accuracy on offshore wind resource assessment using a mesoscale model

Offshore wind simulations were performed with the Weather Research and Forecasting (WRF) model driven by three different sea surface temperature (SST) datasets for Japanese coastal waters to investigate the effect of the SST accuracies on offshore wind simulations. First, the National Centers for Environmental Prediction Final analysis (FNL) (1° × 1° grid resolution) and the Operational Sea Surface Temperature and Sea Ice Analysis (OSTIA) (0.05° × 0.05° grid resolution) datasets were compared with in situ measurements. The results show a decrease in accuracy of these datasets toward the coast from the open ocean. Aiming at an improved accuracy of SST data, we developed a new high‐resolution SST dataset (0.02° × 0.02° grid resolution). The new dataset referred to as MOSST is based on the Moderate Resolution Imaging Spectroradiometer (MODIS) product, provided by the Japan Aerospace Exploration Agency (JAXA). MOSST was confirmed to be more accurate than FNL and OSTIA for the coastal waters. Then, WRF simulations were carried out for 1 year with a 2 km grid resolution and by using the FNL, OSTIA and MOSST datasets. The use of the OSTIA dataset for a WRF simulation was found to improve the accuracy when compared with the FNL dataset, and further improvement was obtained when the MOSST dataset was applied. The sensitivity of wind speed and wind energy density to SST is also discussed. We conclude that the use of an accurate SST is a key factor not only for realistic offshore wind simulations near the surface but also for accurate wind resource assessments at the hub height of wind turbines. Copyright © 2014 John Wiley & Sons, Ltd.