Highly efficient four-wave mixing in an optical fiber with intensity dependent phase matching

Wavelength conversion via four-wave mixing in an optical fiber is investigated under a pump intensity dependent phase-matching condition. To obtain a high conversion gain, we use a fiber with a small mode-field diameter (4.2 /spl mu/m) and a small dispersion slope (0.0307 ps/km/nm/sup 2/). When the signal wavelength is set so that it is 9.2 nm longer than the zero-dispersion wavelength of the fiber, we obtain a wavelength conversion gain of greater than 5 dB over a pump wavelength region of more than 8 nm.     

Thin reduced graphene oxide interlayer with a conjugated block copolymer for high performance non-volatile ferroelectric polymer memory

Polymer ferroelectric-gate field effect transistors (Fe-FETs) employing ferroelectric polymer thin films as gate insulators are highly attractive as a next-generation non-volatile memory. For minimizing gate leakage current of a device which arises from electrically defective ferroelectric polymer layer in particular at low operation voltage, the materials design of interlayers between the ferroelectric insulator and gate electrode is essential. Here, we introduce a new solution-processed interlayer of conductive reduced graphene oxides (rGOs) modified with a conjugated block copolymer, poly(styrene-block-paraphenylene) (PS-b-PPP). A FeFET with a solution-processed p-type oligomeric semiconducting channel and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) insulator exhibited characteristic source–drain current hysteresis arising from ferroelectric polarization switching of a PVDF-TrFE insulator. Our PS-b-PPP modified rGOs (PMrGOs) with conductive moieties embedded in insulating polymer matrix not only significantly reduced the gate leakage current but also efficiently lowered operation voltage of the device. In consequence, the device showed large memory gate voltage window and high ON/OFF source–drain current ratio with excellent data retention and read/write cycle endurance. Furthermore, our PMrGOs interlayers were successfully employed to FeFETs fabricated on mechanically flexible substrates with promising non-volatile memory performance under repetitive bending deformation.     

Evidence of Oxygen Ferromagnetism in ZnO Based Materials

Discoveries of room‐temperature ferromagnetism (RTFM) in semiconductors hold great promise in future spintronics technologies. Unfortunately, this ferromagnetism remains poorly understood and the debate concerning the nature, carrier‐mediated versus defect‐mediated, of this ferromagnetism in semiconducting oxides is still open. Here, by using X‐ray absorption (XAS) and X‐ray magnetic circular dichroism (XMCD), it is demonstrated that the oxygen ions have a ferromagnetic response in different ZnO‐based compounds showing RTFM behavior: ZnO nanoparticles capped with organic molecules and ZnO/ZnS heterostructures. These results demonstrate the intrinsic occurrence of RTFM in these systems, and point out that it is not related to the metallic cation but it relays on the conduction band of the semiconductor.     

10 Gbit/s, 1200 km error-free soliton data transmission using erbium-doped fibre amplifiers

Soliton data signals at 10 Gbit/s have been successfully transmitted for the first time through a 1200 km dispersion-shifted fibre by using 24 erbium-doped fibre amplifiers. A bit error rate below 10/sup -13/ was obtained with 2/sup 20/-1 pseudorandom patterns.<>     

Infinite-distance soliton transmission with soliton controls in time and frequency domains

It is shown by computer runs and simple analysis that one hundred million km soliton transmission is possible by means of soliton transmission controls in the time and frequency domains. This means that limitless transmission is possible. The key to success is to reduce noise by the synchronous modulation technique which can also reduce timing jitter and nonlinear interaction forces. The accumulated noise converges to a fixed low level even after limitless transmission.<>     

Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy

Defects and stress gradually accumulate throughout various Si large-scale integration fabrication processes. It is essential to monitor defects and stress carefully to suppress their unintentional introduction. In this study, we measured the stress and crystal quality in shallow trench isolation (STI) samples by ultraviolet (UV)-Raman spectroscopy with an extremely high-resolution wavenumber to evaluate the effect of post-annealing on the recovery of Si crystals. The variations of crystal quality in 200-mm wafers with STI structures gradually decreased after post-annealing for 4 h, 6 h, and 8 h; however, there was no substantial difference in the values of full-width at half-maximum of the Raman spectra. Precise measurements of variations of stress and crystal quality were successfully performed by UV-Raman spectroscopy with a high-resolution wavenumber, which enabled us to evaluate the STI process accurately.     

Effects of sea surface temperature accuracy on offshore wind resource assessment using a mesoscale model

Offshore wind simulations were performed with the Weather Research and Forecasting (WRF) model driven by three different sea surface temperature (SST) datasets for Japanese coastal waters to investigate the effect of the SST accuracies on offshore wind simulations. First, the National Centers for Environmental Prediction Final analysis (FNL) (1° × 1° grid resolution) and the Operational Sea Surface Temperature and Sea Ice Analysis (OSTIA) (0.05° × 0.05° grid resolution) datasets were compared with in situ measurements. The results show a decrease in accuracy of these datasets toward the coast from the open ocean. Aiming at an improved accuracy of SST data, we developed a new high‐resolution SST dataset (0.02° × 0.02° grid resolution). The new dataset referred to as MOSST is based on the Moderate Resolution Imaging Spectroradiometer (MODIS) product, provided by the Japan Aerospace Exploration Agency (JAXA). MOSST was confirmed to be more accurate than FNL and OSTIA for the coastal waters. Then, WRF simulations were carried out for 1 year with a 2 km grid resolution and by using the FNL, OSTIA and MOSST datasets. The use of the OSTIA dataset for a WRF simulation was found to improve the accuracy when compared with the FNL dataset, and further improvement was obtained when the MOSST dataset was applied. The sensitivity of wind speed and wind energy density to SST is also discussed. We conclude that the use of an accurate SST is a key factor not only for realistic offshore wind simulations near the surface but also for accurate wind resource assessments at the hub height of wind turbines. Copyright © 2014 John Wiley & Sons, Ltd.     

Preparation and properties of CuInS2 thin film prepared from electroplated precursor

Thin CuInS₂ films were prepared by sulfurization of Cu/In bi-layers. First, the precursor layer was electroplated onto the treated surface of Mo-coated glass. Observation of the cross-section prepared by focused ion beam (FIB) etching revealed that the void-free film was initially formed on the top surface of the precursor layer and continued to grow until the advancing front of the film reached the Mo layer. The nucleation of voids near the bottom of the CuInS₂ film followed. To determine whether the condition of the Cu/In alloy influences the CuInS₂ quality we investigated the Cu/In alloy state using FIB. We found that the annealed precursor of low Cu/In ratio (1.2) has several voids in the mid position in the layer compared with Cu-rich precursor (1.6). The cross-sectional view of the Cu-rich absorber layer is uniform compared with the low copper absorber layer. Thin film solar cells were fabricated using the CuInS₂ film (Cu/In ratio: 1.2) as an optical absorber layer. It was found that the optimization of a sulfurization period is important in order to improve the cell efficiency. We have not yet obtained good results with high Cu-rich absorber because of a blister problem. This blister was found before sulfurization. So, we are going to solve this blister problem before sulfurization.     

Production of eicosapentaenoic acid by a bacterium isolated from mackerel intestines

Optimization of culture conditions for the growth rate, 5,8,11,14,17-cis-Eicosapentaenoic acid (EPA) content and EPA productivity of a bacterium isolated from Pacific mackerel intestines was investigated by use of a culture medium containing 1.00 wt% peptone and 0.50 wt% yeast extract in an artificial sea water (ASW). Cultivation temperature affected the growth rate and cellular EPA content of the bacterium. The cellular EPA content at 8°C was as great as 16.8 mg/g of dry cells, which was more than two times greater than that at 25°C (7.3 mg/g of dry cells), although the growth rate showed a maximum at 25°C. Both the yield of bacterial cells and the cellular EPA content at 25°C reached maximum values when the pH of the culture medium was nearly 7.0 and when the concentration of ASW was 100% (v/v). Under optimum culture conditions [25°C pH 7.0 and 100% (v/v) ASW], the amount of EPA accumulated in the cellular lipids reached 45.6 mg/L of culture broth after 8 hr.     

Grain Growth in Sintered ZnO and ZnO-Bi2O3 Ceramics

Grain growth in a high-purity ZnO and for the same ZnO with Bi₂O₃ additions from 0.5 to 4 wt% was studied for sintering from 900° to 1400°C in air. The results are discussed and compared with previous studies in terms of the phenomenological kinetic grain growth expression: G ⁿ— G ⁿ₀= K ₀ t exp(— Q/RT ). For the pure ZnO, the grain growth exponent or n value was observed to be 3 while the apparent activation energy was 224 ± 16 kJ/mol. These parameters substantiate the Gupta and Coble conclusion of a Zn²⁺ lattice diffusion mechanism. Additions of Bi₂O₃ to promote liquidphase sintering increased the ZnO grain size and the grain growth exponent to about 5, but reduced the apparent activation energy to about 150 kJ/mol, independent of Bi₂O₃ content. The preexponential term K ₀ was also independent of Bi₂O₃ content. It is concluded that the grain growth of ZnO in liquid-phase-sintered ZnO-Bi₂O₃ ceramics is controlled by the phase boundary reaction of the solid ZnO grains and the Bi₂O₃-rich liquid phase.