Fluorescence spectra of ARE2I5 and AREI3 in the solid state (A ≡ K, Rb, Cs, Ti; RE ≡ Sm, Eu)

The fluorescence spectra of ARE₂I₅(s) and AREI₃(s) (A ≡ K, Rb, Cs, Tl; RE ≡ Sm₁ Eu) have been studied systematically. The regular shift of the central wavelengths is discussed in a preliminary manner on the basis of crystal lattice field and covalence effects.     

27keV Ar~+斜入射时的Cu-Au合金溅射实验角分布

用27keV Ar~+分别在垂直和倾斜入射情况下,轰击了Cu-Au(30wt％)合金样品,测量了Cu和Au原子的溅射角分布。角分布是用卢瑟福背散射(RBS)技术分析Al捕获膜上的Cu-Au沉积成分而定量得到的。结果表明:(1)在Ar~+倾斜(θ=40°)入射时,Cu原子择优发射,且程度比垂直入射(θ_r=O°)时增强:(2)倾斜入射时,Cu原子的角分布显示出在接近于样品表面法线方向的发射角范围内(θ<45°),发射机率比垂直入射时减小。     

~(141)CeO_2经气管内注入后在肺及淋巴结内的动态分布

本文报告了应用γ放射性测量和放射自显影方法,观察~(141)CeO_2经气管内注入后在大鼠肺及局部淋巴结中动态分布的特点。实验结果表明,~(141)Ce 在肺内与在不同部位、不同个体和单个淋巴结中的分布都是很不均匀的;其滞留量随时间而变化。     

基于条码扫描的特种冰箱集存库系统设计与应用

本文将条码扫描器应用于特种冰箱的制造中,建立了一种新型全自动集存库系统,重点分析了本系统的工作原理和硬件配置,及PLC的程序设计和触摸屏组态软件设计。     

Influence of an external electric field on the microstructure of superplastically deformed 7475 Al

An externally applied electric field retarded strain-enhanced grain growth and promoted dynamic recrystallization during superplastic deformation of 7475 Al. Also, a more extensive dispersoid-free zone was observed in specimens deformed in the electric field, suggesting that the electric field increased the contribution of diffusion creep to superplastic deformation. The electric field promoted the coarsening of dispersoids, especially in the vicinity of the grain boundaries. Possible mechanisms for the observed effects are discussed.     

基于DTC的井下架线式电机车变频调速装置设计与应用

分析了井下架线式电机车运行现状及存在的维护量大、维护成本高、故障率高等问题.设计了一种基于DTC的电机车电机变频调速装置,现场应用情况表明其具有起动力矩大、维护量小、故障率低、节约成本的优点.指出了应用DTC变频调速技术改造传统的矿用架线式电机车直流传动系统的必要性及应用前景.     

辐射敏感综合症--AT病研究进展

共济失调性毛细血管扩张综合症(AT)是一种单基因突变引起的遗传性疾病，表现为高辐射敏感性、进行性神经退变、免疫缺陷、早衰及易患癌症等。本文综述了AT病的研究概况，包括AT临床症状、AT基因的定位、结构与功能、辐射对AT细胞信号传导的影响、AT基因组不稳定性及基因治疗。     

双氧水冷漂助剂液中润湿剂的分离和鉴测

双氧水冷漂助剂液中的润滑剂——烷基硫酸钠可以在四级氧化铝柱上用氯仿和乙醇—水的淋洗体系进行分离而获得纯品;用NMR和GC法进行结构分析;两相滴定法测定其含量。     

Field emission mechanism from nanocrystalline cubic boron nitride films

An electron-emission theoretical model integrating the change in the grain size of nanocrystalline cubic boron nitride (c-BN) thin films was established. To understand better the essence of field emission, an accurate numerical scheme, the transfer matrix method, that can be used to compute the tunneling coefficients of the actual surface barrier, was also adopted. The present results show that the emission current from nanocrystalline grain films is far larger than that from regular grain films or bulk c-BN.