GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Estimation of deformation gradient and strain from cine-PC velocity data

Phase contrast magnetic resonance imaging (MRI) can provide in vivo myocardial velocity field measurements. These data allow densely spaced material points to be tracked throughout the whole heart cycle using, for example, the Fourier tracking algorithm. To process the tracking results for myocardial deformation and strain quantification, we developed a method that is based on fitting the tracking results to an appropriate local deformation model. We further analyzed the accuracy and precision of the method and provided performance predictions for several local models. In order to validate the method and the theoretical performance analysis, we conducted controlled computer simulations and a phantom study. The results agreed well with expectations. Human heart data were also acquired and analyzed, and provided encouraging results. At the signal-to-noise ratio (SNR) level and spatial resolution expected in clinical settings, the study predicts strain quantification accuracy and precision that may allow the technique to become a practical and powerful noninvasive approach for the study of cardiac function, although clinically acceptable data acquisition strategies for three-dimensional (3-D) data are still a challenge.     

氧化铝陶瓷缺口件循环疲劳及断裂机理

用实验方法研究了Ａｌ＿２Ｏ＿３陶瓷缺口试件在循环载荷作用下的疲劳寿命。结果表明，缺口导致的应力集中效应显著降低了循环疲劳寿命；若用缺口根部最大应力为应力水平，则不同缺口半径陶瓷试件具有相同疲劳断裂规律，说明陶瓷材料的疲劳集中系数和理论应力集中系数相同。本文还分析讨论了陶瓷材料的循环疲劳寿命表达式和循环疲劳断裂机理。     

一种基于三次样条函数求离子浓度的自动算法

本文提出了一种用三次样条函数模拟双次标准加入法测量方程，直接求解离子浓度的自动算法。比较了三咱不同边界条件下用要池数计算离子浓度的结果。造出节点区间两极端点的二阶导数为零时的三次样条函数为最佳模拟函数。并讨论了该方法在实际分析中误差的来源及消除办法。经对一系列文献数据的验算对比，表明本法完全可代替传统的迭代法和查图法，且能方便地设置在智能化的电位分析系统中。     

SnO2超微粒子薄膜的气敏特性研究

作者用自行设计的直流气体放电活化反应蒸发装置制备出平均粒径约为40nm的SnO_2超微粒子薄膜.研究了不同氧分压下所得SnO_2超微粒膜的形貌、结构和组成等特性,以及不同样品对各种易燃气体的气敏特性,得出了灵敏度随氧分压及灵敏度随工作温度的变化曲线.     

Analytical formulae for calculating stresses in unidirectional/cross-ply unbalanced laminates

A multilayer theory has been developed for unidirectional/cross-ply unbalanced laminates subjected to surface shear tractions, using the assumption of plane strain. The analytical solution for the stress field in the laminate is obtained and it is shown that the stresses in each layer are in good agreement with the results of a three-dimensional finite element analysis. Approximate formulae for the analytical stresses are also derived for a laminate subjected to an offset distributed force at one end. The accuracy of this solution is shown by comparison with a three-dimensional finite element analysis.     

冷轧形变量对钛板材再结晶织构形成的影响

采用三维晶体学取向分布函数（ＣＯＤＦ）分析法研究了工业纯钛板材不同冷轧形变量对织构形成的影响。结果表明，冷轧形变量为５０－７０％时，再结晶退火后形成了（２１１８）（０１１０）和（１０１８）（１２１０）的部分纤维织构，而在３０％较低或８６％较高的形变量冷轧时，形成典型的轧制织构（２１１５）（０１１０）和再结晶织构（１０１３）（１２１０）型式。     

聚合物载体－稀土金属络合物的研究 ⅩⅢ．聚［苯乙烯－甲基丙烯酸β（甲基亚硫酰基）乙酯］的结构与其稀土金属络合物催化丁二烯聚合的活性

从测得的竞聚率计算了单体链节在聚［苯乙烯－甲基丙烯酸β（甲基亚硫酰基）乙酯］（ＰＳＭ）中的序列分布。苯乙烯（Ｓ）或甲基丙烯酸β（甲基亚硫酰基）乙酯（Ｍ）的长序列的概率随着ＰＳＭ中相应单体含量的增加而增加。对于Ｓ和Ｍ摩尔分数大致相等的ＰＳＭ，单体链节的长序列分布函数值相接近。用与此结构相近的ＰＳＭ合成的稀土金属络合物，其催化活性不佳。在Ｍ短序列分布和Ｓ长序列分布较高的情况下，络合物的催化活性最好。所得聚丁二烯的微观结构与ＰＳＭ中单体单元的分布无关。