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101.
102.
Photoinduced Proton Transfer between Photoacid and pH‐Sensitive Dyes: Influence Factors and Application for Visible‐Light‐Responsive Rewritable Paper 下载免费PDF全文
Ting Zhang Lan Sheng Junning Liu Le Ju Jianhua Li Zhen Du Weiran Zhang Minjie Li Sean Xiao‐An Zhang 《Advanced functional materials》2018,28(16)
Ink‐free printing based on rewritable paper is an efficient and environmental friendly way to reuse paper, protect resources, and save energy for sustainable development of human society. Among various kinds of rewritable media, light responsive rewritable paper (LRP) is one of the most popular research areas due to its clean and favorable noncontact writing. Visible light is more suitable for LRP for its superior penetration and much less damages to organic molecules than UV light. However, visible‐light‐responsive rewritable paper (VLRP) has only limited successes so far. Herein, a VLRP is newly designed and fabricated based on photoinduced proton transfer (PPT) between photoacid and pH‐sensitive dyes. Success of it is highly benefited from systematical investigation and in‐depth understanding on the key influence factors, such as concentration‐induced undesired isomerization, temperature, humidity, and light intensity, on the PPT and its inverse process. As‐prepared VLRP shows long‐awaited properties, such as, high color contrast and resolution, appropriate legible time of prints, excellent reversibility (>100 cycles), easiness to achieve multicolor prints, and agreeing well with environmental concept of green printing. In addition, study of influence factors on PPT in this work, to some extent, may also help people understand complex photocycle process in biosystem. 相似文献
103.
Jun Ye Kai Wang Zhan Chen Fei-Fei An Yi Yuan Chi Zhang Xiao-Hong Zhang Chun-Sing Lee 《Organic Electronics》2014,15(12):3514-3520
A novel device concept was realized for simple single-layer small-molecule white organic light emitting devices. The single organic active layer here is simply comprised of a newly synthesized sky-blue fluorescent bipolar host (TPASO) and a common orange phosphorescent dopant. Suppressed singlet Föster energy transfer induced by a low-concentration doping and spontaneous high- to low-lying triplet energy transfer, respectively, lead to sky-blue fluorescence from TPASO and orange phosphorescence from the dopant. The resulting two-organic-component device exhibits a low turn-on voltage of 2.4 V, maximum current/power efficiencies up to 11.27 ± 0.02 cd A−1 and 14.15 ± 0.03 lm W−1, and a warm-white CIE coordinate of (0.42, 0.45) at 1000 cd m−2. 相似文献
104.
An Ping Zhao 《Microwave and Wireless Components Letters, IEEE》2004,14(5):248-249
For original paper see Wang and Teixeira (IEEE Microwave Wireless Comp. Lett., vol.13, p.72-4, 2003 February). In this paper, a more precise way to evaluate the actual performance of the perfectly matched layer (PML) used for the alternating direction implicit finite-difference time-domain (ADI-FDTD) method is presented. It is shown that the intrinsic numerical dispersion error of the ADI-FDTD method must be taken into account when the actual performance of the ADI-PML (as well as the ADI-FDTD method) is evaluated. Most importantly, it is demonstrated that the ADI-PMLs implemented with either the traditional manner or the way proposed in have almost the same level of accuracy when the performance of the ADI-PML is correctly evaluated. 相似文献
105.
Jing Hao Chen Ying Qian Wang Won Jong Yoo Yee-Chia Yeo Samudra G. Chan D.S. An Yan Du Dim-Lee Kwong 《Electron Devices, IEEE Transactions on》2004,51(11):1840-1848
We fabricated a nonvolatile Flash memory device using Ge nanocrystals (NCs) floating-gate (FG)-embedded in HfAlO high-/spl kappa/ tunneling/control oxides. Process compatibility and memory operation of the device were investigated. Results show that Ge-NC have good thermal stability in the HfAlO matrix as indicated by the negative Gibbs free energy changes for both reactions of GeO/sub 2/+Hf/spl rarr/HfO/sub 2/+Ge and 3GeO/sub 2/+4Al/spl rarr/2Al/sub 2/O/sub 3/+3Ge. This stability implies that the fabricated structure can be compatible with the standard CMOS process with the ability to sustain source-drain activation anneal temperatures. Compared with Si-NC embedded in HfO/sub 2/, Ge-NC embedded in HfAlO can provide more electron traps, thereby enlarging the memory window. It is also shown that this structure can achieve a low programming voltage of 6-7 V for fast programming, a long charge retention time of ten years maintaining a 0.7-V memory window, and good endurance characteristics of up to 10/sup 6/ rewrite cycles. This paper shows that the Ge-NC embedded in HfAlO is a promising candidate for further scaling of FG Flash memory devices. 相似文献
106.
半导体微腔中腔模和激子模耦合形成腔极化激元,三维微腔中由于横向限定腔模和激子模形成离散化的本征模式.本文计算了远离截止近似下,三维半导体微腔中空腔腔模的能量与微腔半径的关系;及腔模和激子模耦合后,三维半导体柱型微腔中具有相同角量子数和径向量子数的两个低阶腔模、重空穴激子模、轻空穴激子模耦合形成的腔极化激元能量随微腔半径变化的情况.结果表明随着微腔半径的减小腔模能量蓝移,腔模与相应的重空穴激子模、轻空穴激子模耦合形成的腔极化激元的三支随着微腔半径的减小存在明显的反交叉行为.随着微腔半径的变化,极化激元的三支所体现的模 相似文献
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