Dual command travel times and miniload system throughput with turnover-based storage

We analyze travel times for automated storage/retrieval systems. In particular, we apply our travel time model to turnover-based storage systems and determine the mean and variance of dual command travel times. We present detailed numerical results for selected rack shape factors and ABC inventory profiles. We then investigate the effect of alternative rack configurations on travel time performance measures. We also show how to determine the throughput of miniload systems with turnover-based storage and exponentially distributed pick times.     

Performance analysis of OFDMA uplink systems with symbol timing misalignment

This letter presents our investigation for the effect of symbol timing errors in orthogonal frequency-division multiple access (OFDMA) uplink systems. We express the symbol timing errors between users as the symbol timing misalignments with respect to the desired user. Then, we derive an explicit expression of the signal-to-noise ratio (SNR) as a function of the maximum value of the symbol timing misalignments. Analyses and simulation results show that, to achieve an SNR of 20 dB, the maximum value of the symbol timing misalignments must be less than the cyclic prefix duration plus 6.25% of the useful symbol duration. Based on the resulting SNR degradation, we evaluate the SNR gain with guard subcarriers in order to mitigate the effect of the symbol timing misalignments.     

Simultaneous amplification by Er ions and SRS in an Er-doped germano-silica fiber

A flat signal gain over in the entire C- and L-bands by erbium (Er) ions' radiative transition and stimulated Raman scattering in an Er-doped germano-silica fiber can be obtained if proper values of the concentration of Er and background loss in a fiber core are obtained during the fiber fabrication process. The optimized conditions for the flat C- and L-band gain are analyzed as functions of Er concentrations. Even for a low-gain value provided by a germano-silica core fiber with a low Er concentration and an optimum fiber length, a relatively low pump is required to obtain the flat gain band.     

利用中石油域用户认证系统实现数据存储备份

系统面向中石油域用户提供了安全、高速的数据传输服务.实现了数据传输DES加密、用户登录LDAP限制、系统安全审计、空间容量扩容等功能.充分利用SAN网络光存储设备,同时也为油田网络存储应用的开发提供了成功经验.     

甲烷无氧芳构化研究进展及其工业应用前景

综述了最近20多年来甲烷无氧芳构化催化剂的制备、积炭失活和再生方面的研究进展，特别分析了催化剂再生过程的工程化问题及反应器型式；还根据甲烷芳构化技术产业化的需要，分析了甲烷芳构化技术的发展趋势。     

Abnormal junction profile of silicided p+/n shallowjunctions: a leakage mechanism

The leakage mechanism in p⁺/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions     

一种实现非等带宽多载波调制的新方法

传统的多载波调制都是采用对传输信道进行等带宽划分的方式。为了更好地适应信道传输特性，一个很有应用前景的发展方向是采用非等带宽划分信道的多载波调制方式。本文提出了一种利用正交小波包变换实现的非等带宽划分信道的多载波调制方法。理论分析和实验结果表明，这种方法对于提高信道的传输性能有很大的潜力。     

An efficient optimistic message logging scheme for recoverable mobile computing systems

A number of checkpointing and message logging algorithms have been proposed to support fault tolerance of mobile computing systems. However, little attention has been paid to the optimistic message logging scheme. Optimistic logging has a lower failure-free operation cost compared to other logging schemes. It also has a lower failure recovery cost compared to the checkpointing schemes. This paper presents an efficient scheme to implement optimistic logging for the mobile computing environment. In the proposed scheme, the task of logging is assigned to the mobile support station so that volatile logging can be utilized. In addition, to reduce the message overhead, the mobile support station takes care of dependency tracking and the potential dependency between mobile hosts is inferred from the dependency between mobile support stations. The performance of the proposed scheme is evaluated by an extensive simulation study. The results show that the proposed scheme requires a small failure-free overhead and the cost of unnecessary rollback caused by the imprecise dependency is adjustable by properly selecting the logging frequency.     

p53 gene therapy in vivo of herpatocellular and liver metastatic colorectal cancer

Tumor suppressor genes such as p53 contribute to the oncogenic process via loss-of-function mechanisms such as genetic mutation or complex formation with other cellular or viral proteins. p53 is mutated in approximately 50% of human tumors and has an important role in the genesis or progression of both colorectal and hepatocellular cancers. Colorectal cancer is leading cause of cancer mortality in the United States, whereas hepatocellular cancer is the leading worldwide cause of cancer death; the liver is a primary site of morbidity in both diseases. Because systemic tumor suppressor gene therapy is currently not feasible, we have chosen to develop a regional form of such therapy directed at primary or metastatic liver neoplasms. Gene replacement therapy with p53 is a promising new strategy to treat advanced human cancers.     

Multiple-gate SOI MOSFETs: device design guidelines

This paper describes computer simulations of various SOI MOSFETs with double and triple-gate structures, as well as gate-all-around devices. The concept of a triple-gate device with sidewalls extending into the buried oxide (hereby called a "/spl Pi/-gate" or "Pi-gate" MOSFET) is introduced. The Pi-gate device is simple to manufacture and offers electrical characteristics similar to the much harder to fabricate gate-all-around MOSFET. To explore the optimum design space for four different gate structures, simulations were performed with four variable device parameters: gate length, channel width, doping concentration, and silicon film thickness. The efficiency of the different gate structures is shown to be dependent of these parameters. The simulation results indicate that the the Pi-gate device is a very promising candidate for future nanometer MOSFET applications.