Thermal conductivity of near-stoichiometric (U, Ce)C and (U, Pu, Ce)C solid solutions

The thermal conductivities of near-stoichiometric (U, Ce)C and (U, Pu, Ce)C solid solutions containing CeC up to 10 mol% were determined in the temperature range from 740 to 1600 K by the laser flash method. The thermal conductivity decreased with the cerium content in the solid solutions. The electrical resistivities were also measured for the purpose of analyzing the heat conduction mechanism. It was found that the decrease of electronic heat conduction caused by the addition of cerium resulted in decreasing the thermal conductivities of (U, Ce)C and (U, Pu, Ce)C compared with UC and (U, Pu)C.     

Dynamics of Hollow and Solid Alumina Particle Formation in Spray Flames

Thermophoretic sampling (TS) of the aerosol was conducted to manifest the formation of hollow and solid alumina particles in spray flames. The collected particles were investigated by transmission electron microscopy. Hollow particles with a thin shell (e.g., 10 nm) were formed from the aluminum nitrate precursor emulsion at less than 4-cm flame height. Hollow particles maintained their shapes in the flame using air as dispersion/oxidant gas, whereas hollow-to-solid restructuring of the particles took place in the flame using oxygen. With oxygen, nanoparticles were formed in the gas phase from the aluminum butoxide/2-propanol precursor solution only, whereas gas-phase reaction was hindered, forming large particles from the aluminum nitrate/2-propanol precursor solution.     

Measurement of Rising R-Curve Behavior in Toughened Silicon Nitride by Stable Crack Propagation in Bending

A simple procedure for measuring the R -curve properties of ceramics by a stable fracture test in three-point bending is described. As a typical case, data are displayed for a Si₃N₄ material toughened by the presence of acicular grains in situ grown during the sintering process. The fracture mechanics specimen was a single-edge double-notched beam (SEDNB), whose notch was sharpened to a radius of <10 μm in order to reduce the amount of elastic energy stored at its root prior to crack extension. Furthermore, a stabilizer, specially designed for the bending geometry, was used to control crack stability. During stable extension, the crack could be easily arrested at selected locations of the load-displacement curve, the load quickly released, and the stable crack extension directly measured by the die-penetration technique. The crack resistance, K _R, of the material was calculated from the measured crack extent and the onset load value before unloading. This method enabled us to precisely monitor the critical load value at which the load-displacement curve deviated from linear behavior, as well as crack extensions from a few tens of micrometers to about 1 mm. As an application of this method, the fracture resistance of a Si₃N₄ material with rising R -curve behavior was measured and found to increase from about 5.5 to 9.0 MPaμm^1/2 within a 0.8-mm extension.