A load dispatch method using fractional programming and semidefinite programming

This paper describes a load dispatch method which minimizes power cost—[fuel cost]/[electric output]—for a power system with thermal plants and energy storage facilities. The proposed method employs fractional programming to convert a minimization problem with fractional objective function to a series of quadratic minimization problems, and semidefinite programming to solve converted problems. The method provides the optimum time‐dependent power output/input and storage level of energy storage facilities as well as time‐dependent power output of thermal plants. The method has been applied to a power system with five thermal plants, two energy storage facilities of various performances, and five load demands. The optimum load scheme of four time mesh points is obtained for the thermal plants and energy storage facilities. The fractional programming successfully converges the optimal scheme through a few iterations. The semidefinite programming deals with a variable matrix of 164 dimensions, and 185 inequality constraints. © 2001 Scripta Technica, Electr Eng Jpn, 138(2): 49–58, 2002     

Application of SiC-Si functionally gradient material to thermoelectric energy conversion device

Because of its high–temperature chemical stability, SiC ceramic is a promising material for high-temperature device applications such as thermoelectric energy converters. However, the electrical conductivity of SiC ceramic is too low for it to be used as a thermoelectric energy converter at the cold junction. Therefore, we propose a SiC-Si functionally gradient material (FGM) in order to improve the electrical conductivity of the SiC ceramic at the cold junction. An SiC rod was fired in a temperature gradient furnace. One end of the SiC rod was maintained at 2473 K and the other end was maintained at 1973 K for 30 min. After firing, the porous SiC edge fired at 1973 K was dipped into molten Si in order to infiltrate molten Si into the porous SiC. The microstructure of the FGM is classified into three regions: the SiC-Si composite material; the porous SiC ceramic; and the densified SiC ceramic. The electrical conductivity, the Seebeck coefficient and the thermal conductivity for each region of SiC-Si FGM was measured at 300 K; a figure of merit was calculated. The figure of merit of the SiC-Si FGM at the cold junction, at room temperature, was 10⁸ times higher than that of a nongradient SiC ceramic.     

The T cell-directed CC chemokine TARC is a highly specific biological ligand for CC chemokine receptor 4

Thymus and activation-regulated chemokine (TARC) is a recently identified CC chemokine that is expressed constitutively in thymus and transiently in stimulated peripheral blood mononuclear cells. TARC functions as a selective chemoattractant for T cells that express a class of receptors binding TARC with high affinity and specificity. To identify the receptor for TARC, we produced TARC as a fusion protein with secreted alkaline phosphatase (SEAP) and used it for specific binding. By stably transfecting five orphan receptors and five known CC chemokine receptors (CCR1 to -5) into K562 cells, we found that TARC-SEAP bound selectively to cells expressing CCR4. TARC-SEAP also bound to K562 cells stably expressing CCR4 with a high affinity (Kd = 0.5 nM). Only TARC and not five other CC chemokines (MCP-1 (monocyte chemoattractant protein-1), RANTES (regulated upon activation, normal T cells expressed and secreted), MIP-1alpha (macrophage inflammatory protein-1alpha), MIP-1beta, and LARC (liver and activation-regulated chemokine)) competed with TARC-SEAP for binding to CCR4. TARC but not RANTES or MIP-1alpha induced migration and calcium mobilization in 293/EBNA-1 cells stably expressing CCR4. K562 cells stably expressing CCR4 also responded to TARC in a calcium mobilization assay. Northern blot analysis revealed that CCR4 mRNA was expressed strongly in human T cell lines and peripheral blood T cells but not in B cells, natural killer cells, monocytes, or granulocytes. Taken together, TARC is a specific functional ligand for CCR4, and CCR4 is the specific receptor for TARC selectively expressed on T cells.     

Superconductivity in W-containing diamond-like nanocomposite films

Superconductivity in a tungsten-containing carbon-oxide film was reported. The film with 500 nm thickness was deposited onto polycrystalline silicon oxides using chemical vapor deposition and the co-sputtering of a tungsten metal target. The bonding state of the carbon atoms and the macroscopic and microscopic crystal structure of the film were investigated by Raman spectroscopy, X-ray diffraction and transmission electron microscopy measurements. From the experimental results, we determined that this film essentially had an amorphous structure. The temperature dependence on resistivity was measured in the temperature range of 2–300 K. Resistive superconducting transition was observed at 3.8 K. The dc magnetizations were measured in the temperature range of 1.8–6.5 K. The diamagnetism resulting from a superconductive state was observed below 3.75 K, which is consistent with a resistive superconducting transition. It is thought that the finite sized clusters of the different superconductive transition temperatures cooperatively produce a macroscopic superconducting phenomenon.     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

Acute progressive polyneuropathy in a patient with Waldenstr?m macroglobulinemia

A case of Waldenstr?m's macroglobulinemia (WM) (IgM-kappa type) associated with acute-onset demyelinating peripheral neuropathy is reported. A 49-year-old woman was admitted to our hospital because of general fatigue and recurrent syncope attacks. She was treated with vincristine, cyclophosphamide, epirubicin and prednisolone. By 10th hospital day, her clinical condition improved and serum viscosity was reduced. However, on the 21st hospital day, she suffered from rapidly progressive writing and gait disturbance. Neurological examination showed muscular atrophy and weakness in the distal part of four extremities. Deep tendon reflexes were diminished. There was no sensory deficit. Cerebrospinal fluid was normal. Anti-myelin associated glycoprotein activity of her serum was negative. Both motor and sensory nerve conduction velocities were markedly decreased. Biopsy of sural nerve revealed marked demyelination and onion bulb formation. There was IgM deposition on myelin sheath. Minimal axonal changes excluded the possibility of vincristine neuropathy. Plasmapheresis improved her symptoms, but nerve conduction velocities remained unchanged. Polyneuropathy associated with WM is usually gradual onset and sensory dominant. In this case, associated neuropathy was acute onset, progressive and motor dominant. This type of neuropathy in patients with WM is very rare.     

Radiation tolerance of type IIa synthetic diamond detector for 14 MeV neutrons

Radiation tolerance of a type IIa synthetic diamond detector was examined from irradiation of mono-energetic 14 MeV neutrons. Measurements of I–V (current–voltage) characteristics and energy spectrum for 5.486 MeV alpha particles were performed after neutron irradiation. In the I–V characteristics measurement, enhancement of rectification was observed after neutron irradiation of up to 2.0 × 10¹² n/cm². Concurrently with the enhancement of rectification, significant decrease in signal amplitude was observed in energy spectrum measurement for alpha particles. It is considered that these changes were due to increase in the concentration of defects acting as shallow energy levels in the forbidden band. For neutron irradiation of higher than 1.6 × 10¹³ n/cm², weakening of the rectification characteristics and recovery of the signal amplitude were observed. These changes imply that deep energy levels, which were also considered to be introduced by defects, were dominant and weakened the effects of the shallow energy levels. Increase in the concentration of the deep trapping levels resulted in gradual decrease of the signal amplitude and degradation in the energy resolution. The peak for the alpha particles was obtained up to 5.5 × 10¹³ n/cm².     

Influences of buried-oxide interface on inversion-layer mobility inultra-thin SOI MOSFETs

This paper reports on a study of the inversion-layer mobility in n-channel Si MOSFETs fabricated on a silicon-on-insulator (SOI) substrate. In order to make clear the influences of the buried-oxide interface on the inversion-layer mobility in ultra-thin film SOI transistors, SOI wafers of different quality at the buried-oxide interface were prepared, and the mobility behaviors were compared quantitatively. The transistors with a relatively thick SOI film exhibited the universal relationship between the effective mobility and the effective normal field, regardless of the buried-oxide interface quality. It was found, however, that Coulomb scattering due to charged centers at the backside interface between SOI films and buried oxides has great influence on the effective mobility in the thin SOI thickness region, depending on the buried-oxide interface quality. This means that Coulomb scattering due to charged centers at the buried-oxide interface can degrade the mobility with decreasing SOI thickness, unless the SOI wafer quality at the buried-oxide interface is controlled carefully