Applications of the discrete element method in mechanical engineering

Compared to other fields of engineering, in mechanical engineering, the Discrete Element Method (DEM) is not yet a well known method. Nevertheless, there is a variety of simulation problems where the method has obvious advantages due to its meshless nature. For problems where several free bodies can collide and break after having been largely deformed, the DEM is the method of choice. Neighborhood search and collision detection between bodies as well as the separation of large solids into smaller particles are naturally incorporated in the method. The main DEM algorithm consists of a relatively simple loop that basically contains the three substeps contact detection, force computation and integration. However, there exists a large variety of different algorithms to choose the substeps to compose the optimal method for a given problem. In this contribution, we describe the dynamics of particle systems together with appropriate numerical integration schemes and give an overview over different types of particle interactions that can be composed to adapt the method to fit to a given simulation problem. Surface triangulations are used to model complicated, non-convex bodies in contact with particle systems. The capabilities of the method are finally demonstrated by means of application examples. Commemorative Contribution.     

Intermediate order in tetrahedrally coordinated silicon: evidence for chainlike objects

In this report, we describe the nature of intermediate order in silicon as determined by recent measurements on thin films using transmission electron microscopy (TEM) and Raman scattering. The TEM images show in addition to the expected continuous random network (CRN), the presence of highly ordered quasi-one-dimensional “chain-like objects” (CLO's) that are 1–2 nm wide and tens of nm long that meander and show some evidence of cross-linking with each other. The presence of these objects correlate to a Raman feature centered at 490 cm⁻¹ whose width is 35–40 cm⁻¹, and is used to quantify the heterogeneity in terms of the CLO and CRN (=475 cm⁻¹ scattering) concentrations. The 490 and 35 cm⁻¹ values are consistent with bond angle deviations approaching 0°, and thus reinforces an association with the CLOs. We find that in reference quality a-Si:H (made using pure SiH₄), the CLO concentration is about 5 vol%, while in state-of-the-art material using high H₂ levels of dilution during processing, it increases to about 15%. Increased stability of such material to light-soaking is thus not mediated by a direct volumetric replacement of poor with high-quality components. Rather, an important characteristic of intermediate order in silicon is the low-dimensional aspect of its order, which allows it to influence more total volume than which it is itself composed. Consistent with these and other recent findings, we propose a tensegrity model of amorphous silicon.     

Etching behavior of CVD zinc selenide in inorganic acid solutions

Chemical interaction between polished surfaces of polycrystalline zinc selenide and inorganic acid solutions of various concentrations has been studied.     

Electromagnetic wave reflection from Fe/Cr nanostructures

The reflection of electromagnetic waves in the millimeter wave band from Fe/Cr nanostructures has been studied. It is established that the giant magnetoresistance (GMR) in the nanostructure leads to an increase in the reflection and a decrease in the transmission of microwaves, while the magnetic resonance leads to a decrease in both the reflection and transmission coefficients.     

High-temperature oxidation of intermetallics formed by group IV transition metals with chromium

We have studied the oxidation resistance of chromium intermetallics: TiCr₂, HfCr₂, and ZrCr₂, in the temperature interval 873–1473 K with isothermal holding of the specimens for up to 20 h. We have shown that the intermetallics TiCr₂ and HfCr₂ are oxidized 2–3 times more slowly than pure titanium and hafnium, but more than 1–2 orders of magnitude faster than chromium at T≤1273 K and 4–6 times faster at 1473 K. In this temperature interval, the intermetallic ZrCr₂ is rapidly oxidized at an increasing rate as the heating temperature rises. The scaling resistance of intermetallics of Group IV d metals with chromium is determined by formation of scales in which the major role is played by the oxides TiO₂, HfO₂, and ZrO₂, with weak protective properties.