首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   495299篇
  免费   4698篇
  国内免费   1242篇
电工技术   7744篇
综合类   2544篇
化学工业   74636篇
金属工艺   26000篇
机械仪表   17814篇
建筑科学   10597篇
矿业工程   5169篇
能源动力   9538篇
轻工业   28791篇
水利工程   7041篇
石油天然气   15375篇
武器工业   33篇
无线电   49313篇
一般工业技术   109204篇
冶金工业   67702篇
原子能技术   14296篇
自动化技术   55442篇
  2021年   3997篇
  2019年   3937篇
  2018年   21207篇
  2017年   20396篇
  2016年   17639篇
  2015年   5064篇
  2014年   7930篇
  2013年   17933篇
  2012年   14340篇
  2011年   23745篇
  2010年   19806篇
  2009年   18746篇
  2008年   20012篇
  2007年   20791篇
  2006年   11163篇
  2005年   11134篇
  2004年   10762篇
  2003年   10591篇
  2002年   9508篇
  2001年   9019篇
  2000年   8997篇
  1999年   8499篇
  1998年   17722篇
  1997年   13252篇
  1996年   10292篇
  1995年   7887篇
  1994年   7274篇
  1993年   7252篇
  1992年   5967篇
  1991年   5972篇
  1990年   5844篇
  1989年   5801篇
  1988年   5594篇
  1987年   5228篇
  1986年   4975篇
  1985年   5534篇
  1984年   5284篇
  1983年   5014篇
  1982年   4631篇
  1981年   4796篇
  1980年   4669篇
  1979年   4895篇
  1978年   5075篇
  1977年   5342篇
  1976年   6559篇
  1975年   4578篇
  1974年   4558篇
  1973年   4641篇
  1972年   4014篇
  1971年   3717篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
81.
Translated from Atomnaya Énergiya, Vol. 67, No. 3, pp. 215–216, September, 1989.  相似文献   
82.
83.
84.
A method for fabricating single crystal blades that combines the techniques of seed crystals and selection is suggested. The method realizes the advantages of both techniques, i.e., the high structural perfection and the possibility of fabricating single crystals with specified spatial orientation. Metallographic and x-ray diffraction analyses are used to study the processes of nucleation of the single crystal structure of blade castings fabricated from high-temperature nickel alloys by the method of selection and seed crystals. A commercial process for fabricating cast single crystal turbine blades by the new method is suggested.  相似文献   
85.
An investigation into the effects of pressure (helium gas) on the isothermal fluid behavior includes: (1) the effect of pressure on the rate of melting and coking as evidenced by the rate constants k(melt) and k(coke); (2) the effect of pressure on the energies of activation of melting and coking; (3) the effects of pressure on the characteristic times; (4) the effects of pressure on the maximum isothermal fluidity. Results from the effects of pressure on k(melt) revealed that it was generally the high total sulfur, low nitrogen, low reactives/mineral matter ratio, medium rank coals which show the greatest increase in k(melt), whereas the highest rank coals show the least decrease in k(coke). The energies of activation of melting and coking were not significantly affected by pressure. The investigation also reveals increases or decreases in the respective times of softening, maximum fluidity, resolidification and total time of fluid behavior under isothermal pressurized conditions. There appears the possibility that these shifts may be rank dependent. Additionally, the lower rank coals show the largest relative increase in their fluidities when subjected to pressure. Empirical relationships were derived in order to quantitatively predict the maximum isothermal fluidity for most (fluid) coals at a given pressure.  相似文献   
86.
A fast algorithm is proposed for estimating the auto- and cross-correlation functions of a large signal. The algorithm is based on the sectioning method by the fast Fourier transform. We determine the optimal length of the portion of data read from external memory into RAM which achieves Tmin—a minimum processing time. An estimate of Tmin is obtained.Translated from Kibernetika, No. 3, pp. 78–81, May–June, 1991.  相似文献   
87.
88.
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs  相似文献   
89.
90.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号