Differential calorimeter for studying composites

The novel design of the DK-600/K differential thermal-flux calorimeter, with a cell volume of 6.5 cm³, is intended for the study of materials in the temperature range 300–900 K. The sensitivity of the calorimeter is 22 μV/mW at 300 K and 8 μV/mW at 900 K; the reaction threshold is 80 μW in the temperature scanning mode and 7 μW in the isothermal mode. Comparison of some characteristics of the DK-600/K with analogs from a number of foreign firms shows that it is competitive. Translated from Izmeritel'naya Tekhnika, No. 3, pp. 41–43, March, 1994.     

Probabilistic evaluation of lateral extent of soil liquefaction under earthquake loading

A Monte Carlo simulation method for calculating the probability of soil liquefaction of a finite area in which the ground motion is propagated upward from the bedrock through the soil layers is presented. The vertical propagation of the ground motion through the soil layers is analyzed using random vibration analysis. To account for the variability of soil properties with depth, the soil deposit is divided into layers. Within each layer the horizontal statistical correlation of the undrained cyclic shearing strength against liquefaction is taken into consideration by describing it as a two-dimensional homogeneous random field. The method computes the probability of liquefaction spreading over a specified area under a given earthquake loading considering the effects of spatial correlation of soil properties.     

Perspective channel-type reactor with enhanced safety

Following the search for new design solutions to develop within the framework of channel trends the reactor with enhanced safety the Research and Development Institute of Power Engineering has developed the design of the multiloop boiling water reactor (MKER). The MKER enhanced safety is attained when involving the inherent safety features, passive safety systems as well as the accident consequences confinement devices. The design realizes several advantages which are typical of the channel-type reactors, namely: the design desintegration simplifying the manufacture, control, equipment delivery and decreasing, versus the pressure vessel reactors, the accident effect if it proceeds in an explosive manner; small operating reactivity margin and fuel burnup increased due to continuous refuelling; fuel cycle flexibility allowing comparatively easily to adopt the reactor to the conjuncture of the country fuel balance; multiloop circuit of the main coolant which reduces the degree and effect of the accidents connected with the equipment and pipings rupture; monitoring of the channels and fuel assemblies leak-tightness.     

Measurement of interfacial area concentration in subcooled liquid-vapour flow

In two-fluid modelling, accurate prediction of the interfacial transport of mass, momentum and energy is required. Experiments were carried out to obtain a database for the development of interfacial transport models, or correlations, for subcooled water-steam flow in vertical conduits. The experimental data of interest included the interfacial area concentration, interfacial condensation heat transfer and bubble relative velocity. This paper focuses on the interfacial area concentration. The interfacial area concentration was obtained by measuring the distributions of bubble volume and surface area as well as the area-averaged void fraction at various axial locations in subcooled water-steam condensing vertical upward flow under low flow rate and low pressure conditions. The bubble size and surface area were determined using high-speed photography and digital image processing techniques. The area-averaged void fraction was measured by a single-beam gamma densitometer. The results were compared with existing correlations, which were developed on the basis of data obtained for air-water adiabatic flows. Poor agreement between the present data and the existing correlations was obtained. Accordingly, new correlations suitable for subcooled liquid-vapour bubbly flow are proposed.     

Synthesis and characterization of tungsten disulphide films grown by pulsed-laser deposition

The synthesis and characterization of tungsten disulphide (WS₂) films grown on 440C stainless steel substrates using the 248 nm line from a KrF excimer laser are reported. Film properties could be adjusted by controlling substrate temperature and by laser or thermal anneals. X-ray photoelectron spectroscopy, glancing angle XRD, Raman spectroscopy and high-resolution scanning electron microscopy were used to evaluate film chemistry, crystallinity and morphology. Films grown at room temperature were amorphous, near stoichiometric, and had a multiplicity of chemical states. Local order and bonding were improved most dramatically through post-deposition laser anneals. Crystallite size could be increased by raising the substrate temperature during deposition and, to a lesser degree, by post-deposition thermal anneals. Local disorder was observed within the larger crystallites compared to those that were laser annealed. Crystallinity was induced in amorphous films by mechanical rubbing at room temperature under conditions where frictional heating was negligible. The degree of control over film properties provided by PLD demonstrates its value for growing/designing tribological coatings.     

Method of selecting the regularisation parameter for microwaveimaging

The Tikhonov regularisation technique is widely used in the solution of inverse scattering problems. One of the difficulties in applying this technique is the proper selection of the associated regularisation parameter. Based on a stochastic model of the reconstruction process, a simple method is presented for selecting this parameter for an efficient implementation of various microwave imaging methods     

A forward-looking system for planning and monitoring metrological support to an organization

The ARM-Uchet computerized system is considered, which is intended for accounting, planning, and monitoring for metrological support to an organization and has been implemented on an IBM PC AT. Schemes are given for the basic modes of operation and for the software suites, as well as the database structure.Translated from Izmeritel'naya Tekhnika, No. 7, pp. 70–71, July, 1994.     

Controlling for stimulus dominance in dichotic listening tests: A modification of !l.

Dichotic listening procedures have been used to assess cerebral lateralization in normal Ss. One particularly useful technique is the use of stimuli that fuse into a single percept. Although this procedure has many advantages over other dichotic listening methods, it is particularly susceptible to stimulus dominance, which acts as noise in a S's response data, thus reducing the power of any statistical test of the ear advantage. It is proposed that the solution to this problem is a log-linear analysis of the response data to yield a λ-type index (λ*) that is a measure of ear dominance independent of stimulus dominance. Details of the analysis are provided, as well as a sample analysis of data collected from 104 right-handed and 30 left-handed Ss. Comparisons are drawn between the log-linear analysis and other methods that have been proposed to control for stimulus dominance in this single-response dichotic fusion procedure. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

A boost-type converter for DC-supply of fluorescent lamps

A boost type converter is described that is suitable for low-voltage DC-supply of fluorescent lamps. It has inherent lamp current limitation (ballast action) and provides the high voltage pulses and electrode heating that are required for igniting the lamp. The proposed circuit is applicable in automotive, emergency, and portable light sources.<>     

Enhanced high-frequency performance in a GaAs, self-aligned, n-JFETusing a carbon buried p-implant

C ion implantation has been employed, for the first time, to form the buried p-layer in GaAs, self-aligned, ion implanted JFETs. Comparable DC performance was seen for JFETs with C or Mg implants; however, C-backside JFETs showed superior high-frequency performance. High dose C-backside devices had a f_t of 28.3 GHz and a f_max of 43.2 GHz for a 0.5 μm gate length that were 28% and 46% higher, respectively, than comparable Mg-implanted JFETs. This enhancement is a result of the lower C_gs in the C-backside device resulting from he inherently low activation of the implanted C below the channel while the C still effectively compensated the tail of the Si-channel implant. This approach relaxes the trade-off between optimizing the DC and the AC performance for the buried p-implant in GaAs JFETs and MESFET's