Constant stretching rate experiments on low density polyethylene

A simple apparatus for elongational test of molten polymers is presented. Its realiability is demonstrated by means of stress growth in constant stretching rate experiments and relaxation test on a low density polyethylene sample.     

Fast algorithms for estimating the correlation functions of large signals

A fast algorithm is proposed for estimating the auto- and cross-correlation functions of a large signal. The algorithm is based on the sectioning method by the fast Fourier transform. We determine the optimal length of the portion of data read from external memory into RAM which achieves T_min—a minimum processing time. An estimate of T_min is obtained.Translated from Kibernetika, No. 3, pp. 78–81, May–June, 1991.     

An expert diagnostic system for the MACRO experiment at the GranSasso Laboratory

The maintenance of the MACRO (a Monopoles, Astrophysics and Cosmic Ray Observatory), a large-area detector that will be used to search for rare constituents or phenomena in cosmic radiation penetrating deep underground, is addressed. A real-time expert system for diagnosing detector and data acquisition system anomalies, which is based on the NEXPERT commercial tool, is described. It performs online diagnosis and, if an abnormal condition is identified, takes the appropriate action to reduce the unavailability of the apparatus. The data acquisition system is CAMAC-based, and the sensor modules, which gather the significant values for diagnosis, are implemented in the VME crate     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

Sequential tripping strategy for a transmission network back-upprotection expert system

This paper describes a sequential tripping strategy used in a wide area back-up protection expert system (BPES) to combat situations in which protection relays have maloperated or information is missing. The BPES is an innovative back-up protection scheme designed to prevent the occurrence of widespread blackouts. The BPES evaluates the certainty that transmission lines are likely to be affected by the fault and uses a sequential tripping strategy to isolate the fault if a firm decision is not available due to maloperated relays and/or missing information. The mode of analysis and the sequential tripping strategy ensures that the BPES will clear a fault at minimum risk to the network. An example is included to demonstrate how the certainty factor based sequential tripping strategy is employed by the BPES to clear a fault which occurred on the South Western part of the UK National Grid System