Choice of line reactors for HVDC lines and back-to-back links

Recommendations on the choice of a line reactor for HVDC lines and back-to-back links have been systematized. It is shown how the HVDC self-resonant frequencies should be detuned from resonance with network harmonics and how long-standing operation of BTBL and HVDC should be provided in commutations, failures, lightning high voltages, and short-circuit current.     

Experience in operation of CHVC of the Vyborg BBL and recommendations on perspective BBLs

Results of operation of the equipment at the Vyborg back-to-back link 355 and 405 MW in power are analyzed. Recommendations for the circuits, structure, and parameters of the equipment for perspective back-to-back 600-MW links are given.     

考虑轮齿修形的变厚齿轮啮合刚度数值计算

针对有限元法求解变厚齿轮时变啮合刚度的求解效率低、计算结果易不收敛等问题,基于切片法建立了一种考虑齿向修形的变厚齿轮时变啮合刚度求解模型,在综合考虑齿轮基圆与齿根圆之间关系的基础上,对现有的Weber能量法进行改进,并采用该方法计算了变厚齿轮的时变啮合刚度。通过建立变厚齿轮有限元分析模型,对其进行加载接触分析,计算其啮合刚度,并与所提方法进行比较,结果表明,所提方法可以有效提高计算精度,提升计算效率。在此基础上,采用集中参数法分析了变厚齿轮不同啮合参数和修形参数对时变啮合刚度的影响规律,为变厚齿轮的结构优化设计和系统动力学分析奠定了基础。     

AN UNCOOLED VERY LOW NOISE SCHOTTKY DIODE RECEIVER FRONT-END FOR MIDDLE ATMOSPHERIC OZONE AND CARBON MONOXIDE MEASUREMENTS

The paper describes an uncooled front-end of the Schottky diode receiver system, which may be applied for observations of middle atmospheric ozone and carbon monoxide thermal emission lines at frequencies 110.8 GHz and 115.3 GHz, respectively. The mixer of the front-end has utilized high-quality Schottky diodes that allowed us to reduce the mixer conversion loss. The combination of the mixer and an ultra-low-noise IF amplifier in the one integrated unit has resulted in double-sideband (DSB) receiver noise temperature of 260 K at a local oscillator (LO) frequency of 113.05 GHz in the instantaneous IF band from 1.7 to 2.7 GHz. This is the lowest noise temperature ever reported for an uncooled ozone receiver system with Schottky diode mixers.     

Observation of Unconventional Dynamics of Domain Walls in Uniaxial Ferroelectric Lead Germanate

Application of scanning probe microscopy techniques such as piezoresponse force microscopy (PFM) opens the possibility to re‐visit the ferroelectrics previously studied by the macroscopic electrical testing methods and establish a link between their local nanoscale characteristics and integral response. The nanoscale PFM studies and phase field modeling of the static and dynamic behavior of the domain structure in the well‐known ferroelectric material lead germanate, Pb₅Ge₃O₁₁, are reported. Several unusual phenomena are revealed: 1) domain formation during the paraelectric‐to‐ferroelectric phase transition, which exhibits an atypical cooling rate dependence; 2) unexpected electrically induced formation of the oblate domains due to the preferential domain walls motion in the directions perpendicular to the polar axis, contrary to the typical domain growth behavior observed so far; 3) absence of the bound charges at the 180° head‐to‐head (H–H) and tail‐totail (T–T) domain walls, which typically exhibit a significant charge density in other ferroelectrics due to the polarization discontinuity. This strikingly different behavior is rationalized by the phase field modeling of the dynamics of uncharged H–H and T–T domain walls. The results provide a new insight into the emergent physics of the ferroelectric domain boundaries, revealing unusual properties not exhibited by conventional Ising‐type walls.     

Electron Mobility of 24 cm2 V−1 s−1 in PbSe Colloidal‐Quantum‐Dot Superlattices

Colloidal quantum dots (CQDs) are nanoscale building blocks for bottom‐up fabrication of semiconducting solids with tailorable properties beyond the possibilities of bulk materials. Achieving ordered, macroscopic crystal‐like assemblies has been in the focus of researchers for years, since it would allow exploitation of the quantum‐confinement‐based electronic properties with tunable dimensionality. Lead‐chalcogenide CQDs show especially strong tendencies to self‐organize into 2D superlattices with micrometer‐scale order, making the array fabrication fairly simple. However, most studies concentrate on the fundamentals of the assembly process, and none have investigated the electronic properties and their dependence on the nanoscale structure induced by different ligands. Here, it is discussed how different chemical treatments on the initial superlattices affect the nanostructure, the optical, and the electronic‐transport properties. Transistors with average two‐terminal electron mobilities of 13 cm² V^?1 s^?1 and contactless mobility of 24 cm² V^?1 s^?1 are obtained for small‐area superlattice field‐effect transistors. Such mobility values are the highest reported for CQD devices wherein the quantum confinement is substantially present and are comparable to those reported for heavy sintering. The considerable mobility with the simultaneous preservation of the optical bandgap displays the vast potential of colloidal QD superlattices for optoelectronic applications.     

Enhanced Sulfur Tolerance of Ceria-Promoted NO x Storage Reduction (NSR) Catalysts: Sulfur Uptake, Thermal Regeneration and Reduction with H2(g)

SO _x uptake, thermal regeneration and the reduction of SO _x via H₂(g) over ceria-promoted NSR catalysts were investigated. Sulfur poisoning and desulfation pathways of the complex BaO/Pt/CeO₂/Al₂O₃ NSR system was investigated using a systematic approach where the functional sub-components such as Al₂O₃, CeO₂/Al₂O₃, BaO/Al₂O₃, BaO/CeO₂/Al₂O₃, and BaO/Pt/Al₂O₃ were studied in a comparative fashion. Incorporation of ceria significantly increases the S-uptake of Al₂O₃ and BaO/Al₂O₃ under both moderate and extreme S-poisoning conditions. Under moderate S-poisoning conditions, Pt sites seem to be the critical species for SO _x oxidation and SO _x storage, where BaO/Pt/Al₂O₃ and BaO/Pt/CeO₂/Al₂O₃ catalysts reveal a comparable extent of sulfation. After extreme S-poisoning due to the deactivation of most of the Pt sites, ceria domains are the main SO _x storage sites on the BaO/Pt/CeO₂/Al₂O₃ surface. Thus, under these conditions, BaO/Pt/CeO₂/Al₂O₃ surface stores more sulfur than that of BaO/Pt/Al₂O₃. BaO/Pt/CeO₂/Al₂O₃ reveals a significantly improved thermal regeneration behavior in vacuum with respect to the conventional BaO/Pt/Al₂O₃ catalyst. Ceria promotion remarkably enhances the SO _x reduction with H₂(g).     

7-Nitro- and 7-aminosubstituted spiropyrans of 1-benzothieno[3,2-b]pyrrole

Amino and nitro derivatives of spiropyrans based on 1-benzothieno[3,2-b]pyrrole were synthesized employing an efficient method for the reduction of nitro group in thienopyrroles and spiropyrans. Novel bi-functional compounds, containing salicylideneaniline and dithienylethene fragments, along with spiropyran were prepared from the aminospiropyran derivative.     

High‐Efficiency PbS Quantum‐Dot Solar Cells with Greatly Simplified Fabrication Processing via “Solvent‐Curing”

PbS quantum‐dot (QD) solar cells are promising candidates for low‐cost solution‐processed photovoltaics. However, the device fabrication usually requires ten more times film deposition and rinsing steps, which is not ideal for scalable manufacturing. Here, a greatly simplified deposition processing is demonstrated by replacing methanol with acetonitrile (ACN) as the rinsing solvent. It is discovered that ACN can effectively “cure” the film cracks generated from the volume loss during the solid‐state ligand‐exchange process, which enables the deposition of thick and dense films with much fewer deposition steps. Meanwhile, due to the aprotic nature of ACN, fewer trap states can be introduced during the rinsing process. As a result, with only three deposition steps for the active layer, a CPVT‐certified 11.21% power conversion efficiency is obtained, which is the highest efficiency ever reported for PbS QD solar cells employing a solid‐state ligand‐exchange process. More importantly, the simple film‐deposition processing provides an opportunity for the future application of QDs in low‐cost printing of optoelectronic devices.