Design procedure of class-E amplifier for off-nominal operation at 50% duty ratio

Design equations for satisfying the off-nominal operating condition [i.e., only the zero-voltage switching (ZVS) condition] of the Class-E amplifier with a linear shunt capacitance at a duty ratio D=0.5 are derived. A new parameter s (V/s), called the slope of switch voltage when the switch turns on is introduced to obtain an image of the distance from the nominal conditions. By examining off-nominal Class-E operation degree of the design freedom of the Class-E amplifier increases by one. In addition various amplifier parameters such as operating frequency, output power, and load resistance range can be set as design specifications. For example, the peak switch voltage and switch current can be taken into account in the design procedure. Examples of a design procedure of the Class-E amplifier for off-nominal operation are given. The theoretical results were verified with PSpice simulation and experiments.     

Mechanism of the inhibiting effect of diphenylamine in the oxidation of hydraulic oils

The mechanism of the inhibiting effect of diphenylamine during the oxidation of two base stocks of hydraulic oils were studied at 120, 130, and 140°C. The key reactions in the mechanism of the action of the inhibitor were identified, and the values of the kinetic parameters and their activation energies were determined. The kinetic parameters were calculated, and the salient kinetic features of the inhibited oxidation of the two specimens were compared at 70°C, the temperature of accelerated testing of hydraulic oils. The results of this prediction were analyzed, and the reasons for differences in the oxidation stability of the samples examined were established.     

A CMOS multichannel 10-Gb/s transceiver

We describe a CMOS multichannel transceiver that transmits and receives 10 Gb/s per channel over balanced copper media. The transceiver consists of two identical 10-Gb/s modules. Each module operates off a single 1.2-V supply and has a single 5-GHz phase-locked loop to supply a reference clock to two transmitter (Tx) channels and two receiver (Rx) channels. To track the input-signal phase, the Rx channel has a clock recovery unit (CRU), which uses a phase-interpolator-based timing generator and digital loop filter. The CRU can adjust the recovered clock phase with a resolution of 1.56 ps. Two sets of two-channel transceiver units were fabricated in 0.11-/spl mu/m CMOS on a single test chip. The transceiver unit size was 1.6 mm /spl times/ 2.6 mm. The Rx sensitivity was 120-mVp-p differential with a 70-ps phase margin for a common-mode voltage ranging from 0.6 to 1.0 V. The evaluated jitter tolerance curve met the OC-192 specification.     

Understanding the differences between how novice and experienced designers approach design tasks

Research was undertaken to understand how to provide the most appropriate support for novice designers in engineering design. However, how designers apply their experience and knowledge is not understood and further research in this area is required. This paper describes an observational study to understand how novice and experienced designers approach design tasks. Electronic Publication     

High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.     

Occupational Factors and 5-Year Weight Change Among Men in a Danish National Cohort.

This study explored whether factors related to the work environment could predict changes in body mass index (BMI) and whether the effect of psychosocial factors was dependent on baseline BMI. The sample consisted of 1,980 male employees from the Danish National Work Environment Cohort Study. Changes in BMI between 1995 and 2000 were analyzed, by multiple regression, as a function of background variables and a series of occupational variables obtained in 1995. Age, baseline BMI, job insecurity, and psychological demands predicted changes in BMI. Job insecurity and high or low psychological demands increased the likelihood of weight gain among obese employees, whereas they increased the likelihood of weight loss among employees with a low BMI. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Review Processing, properties and applications of reactive silica from rice husk—an overview

Rice husk is an abundantly available waste material in all rice producing countries. In certain regions, it is sometimes used as a fuel for parboiling paddy in the rice mills. The partially burnt rice husk in turn contributes to more environmental pollution. There have been efforts not only to overcome this but also to find value addition to these wastes using them as secondary source of materials. Rice husk contains nearly 20% silica, which is present in hydrated amorphous form. On thermal treatment, the silica converts to crystobalite, which is a crystalline form of silica. However, under controlled burning conditions, amorphous silica with high reactivity, ultra fine size and large surface area is produced. This micro silica can be a source for preparing advanced materials like SiC, Si₃N₄, elemental Si and Mg₂Si. Due to the high pozzolanic activity, this rice husk silica also finds application in high strength concrete as a substitute for silica fume. Possibility of using this silica as filler in polymers is also studied. The present paper is an attempt to consolidate and critically analyse the research work carried out so far on the processing, properties and application of rice husk silica in various laboratories and also highlighting some results on the processing and characterization of RHA and reactive silica obtained from it in the authors' laboratory.     

A new microcalorimeter for measurements in 3.5-mm coaxial line

A new microcalorimeter has been realized for implementing the national power standard up to 26.5 GHz in a 3.5-mm coaxial line at the Istituto Elettrotecnico Nazionale (IEN) Galileo Ferraris, Turin, Italy. The system is based on a dry thermostatic cell controlled by Peltier elements. The thermal load consists of a twin sensor system that is alternately supplied with high frequency test power and low frequency or direct current (DC) reference power through adiabatic coaxial lines. This microcalorimeter was originally designed for calibrating bolometric mounts. Recently, it has been modified for thermocouple power sensors, which can operate from DC to 26.5 GHz in a 3.5-mm coaxial line.     

High-resolution long-array thermal ink jet printhead fabricated by anisotropic wet etching and deep Si RIE

This paper describes the fabrication and characterization of a thermal ink jet (TIJ) printhead suitable for high speed and high-quality printing. The printhead has been fabricated by dicing the bonded wafer, which consists of a bubble generating heater plate and a Si channel plate. The Si channel plate consists of an ink chamber and an ink inlet formed by KOH etching, and a nozzle formed by inductively couple plasma reactive ion etching (ICP RIE). The nozzle formed by RIE has squeezed structures, which contribute to high-energy efficiency of drop ejector and, therefore, successful ejection of small ink drop. The nozzle also has a dome-like structure called channel pit, which contributes to high jetting frequency and high-energy efficiency. These two wafers are directly bonded using electrostatic bonding of full-cured polyimide to Si. The adhesive-less bonding provided an ideal shaped small nozzle orifice. Use of the same material (Si substrate) in heater plate and channel plate enables the fabrication of high precision long printhead because no displacement and delamination occur, which are caused by the difference in thermal expansion coefficient between the plates. With these technologies, we have fabricated a 1" long printhead with 832 nozzles having 800 dots per inch (dpi) resolution and a 4 pl. ink drop volume.