A selective CVD tungsten-strapped polysilicon local interconnectiontechnology

A local interconnection technology utilizing polysilicon strapped with selective-chemical-vapor-deposited (CVD) tungsten has been developed. Both n- and p-channel MOS transistors have been successfully fabricated using this technology. Tungsten deposited on polysilicon is an attractive gate shunt and local interconnection material because of its low resistivity, immunity to dopant segregation and diffusion, and resistance to electromigration. A potential problem of this technology is the excessive diode leakage current associated with strapping shallow source/drain diodes with tungsten. The leakage is attributed to defects induced by the heavy source/drain implant, which can be effectively eliminated with a proper annealing procedure     

Designing for parallel fuzzy computing

As the number of fuzzy logic applications increases, demand for faster architectures will grow. Our design for a VLSI fuzzy processor uses fuzzy inference techniques that optimize processing time. Preprocessing that reduces the number of rules to be processed, parallel computation of active rule degrees of activation, and scalability are major features of this architecture. The journal issue contains a concise summary of this article. The complete article is linked to Micro's home page on the World Wide Web (http://www.computer.org/pubs/micro/micro.htm)     

ERD facility for analysis of hydrogen and deuterium in solids

Hydrogen is the lightest element in nature, and so, its detection and quantitative analysis is difficult by the conventional methods utilized for other elements. In the recent years the technique of elastic recoil detection analysis (ERD) using 1–2 MeV He⁺ beam has been developed to quantitatively and simultaneously analyze hydrogen and its isotopes in solids. Such a facility has been set up using the 2 MeV Van-de-Graaff accelerator at IIT Kanpur. It facilitates H and D analysis in a material up to a depth of ∼ 1μm with a detection sensitivity of 0·1 at.% and depth resolution of about 300 ?. The application potential of this setup is illustrated by presenting the results of measurements performed on Al:H:D systems prepared by plasma source ion implantation and highT _c YBCO pellets exposed to humid atmosphere.     

Use of connected arithmetic spirals for control of openings

We demonstrate that it is possible to use connected arthmetic spirals to control the diameters of openings in metallic objects, including bushings. Computational results and experimental research are presented. Translated from Izmeritel'naya Tekhnika, No. 10, pp. 17–19, October, 1996.     

Hydrodynamic errors of ultrasonic flowmeters

Hydrodynamic errors are analyzed theoretically. The results of experimental investigations of Filatov flowmeters in which these errors are eliminated, are presented. Translated from Izmeritel'naya Tekhnika, No. 9, pp. 36–37, September, 1996.     

Conceptual uncertainty of measurement errors

It is shown that measurement errors can be viewed in three different ensembles of random values with distinct distribution laws. The conceptual uncertainty of an error associated with this phenomenon is discussed. The problem of an extension of interpretation of measurement errors in metrological normative documents is addressed. Translated from Izmeritel'naya Tekhnika, No. 5, pp. 7–8, May, 1996.     

Dynamics of heat precursors in a medium containing channels with elevated thermal diffusivity

A heat wave propagating in a locally inhomogeneous medium containing elongated channels with elevated thermal diffusivity is considered.Institute of the Dynamics of Geospheres, Russian Academy of Sciences, Moscow. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 66, No. 2, pp. 151–154, February, 1994.     

Mixing in processing of thermoplastics by extrusion

Translated from Khimicheskoe i Neftyanoe Mashinostroenie, No. 8, pp. 9–11, August, 1993.