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141.
142.
A production learning system (PLS) based on the tool model was constructed as a decision support and real-time information update system to forecast the cycle time. A tool model includes a waiting model and a processing model. Each of the waiting and processing models uses a backpropagation neural network to establish the relationship between the input and output (time) of the model. Hence, cycle time estimation, tool group move and confirm line item performance (CLIP) value can be obtained based on the memory stored in the neural network. The result shows that the forecasting ability of the PLS has an error rate below 8% on average 相似文献
143.
GPRS全称通用分组无线业务,它在改进了现有GSM系统后能实现高速的数据传输。首先对GPRS系统做了简单介绍,然后在此基础上详细介绍了GPRS的板间切换在CPX8216硬件平台上的实现方法。 相似文献
144.
A novel directional-coupler optical switch based on the concept of the field-induced guide is demonstrated for the first time. The device exhibits a good switching characteristic between two output ends with a crosstalk of -10 dB at a 1.15 mu m wavelength for a device with an 800 mu m coupling length.<> 相似文献
145.
热释电系数的测量方法 总被引:2,自引:0,他引:2
描述热释电系数的两种测量方法。其一为电荷积分法,测试系统简单,测量数据准确,且能满足零电场条件下的测量。其二为动态电流法,采用调制热源技术,研究在特定温度条件下热释电材料的动态热释电响应。 相似文献
146.
Two new modeling and simulation approaches for Simultaneous Switching Noise (SSN) are described and compared to “brute force”
simulation by SPICE. Both simulation accuracy and simulation run-time are considered. The two new approaches are: 1) the “effective
inductance” method, in which an approximate, very efficient method of extracting an SSN L
eff
is utilized; and 2) the “macromodel” method, in which the complex inductance network responsible for SSN is represented by
only a few dominant poles in the frequency domain and the time domain response is obtained by an efficient convolution algorithm.
Both approaches are shown to be accurate and fast, but only the effective inductance algorithm is robust in numerical convergence.
Received: 19 March 1997 / Accepted: 25 March 1997 相似文献
147.
148.
High conductivity n-type ZnSe with = 0.01 ωcm and n = 2.4 × 1018 cm−3 is obtained on (100) GaAs substrates by low pressure organometallic chemical vapor deposition. The 14 meV full width at half maximum of the 77 K photoluminescence near-band-edge emission shows a high quality of as-grown Al-doped ZnSe epilayers. With a suitable Al doping level, a strong photoluminescence intensity of near-band-edge emission is obtained. The behavior of near-band-edge emission and of self-activated emission related to the incorporation of aluminum are discussed in this paper. 相似文献
149.
The extent of the dominant singular field is investigated for a finite crack under stress wave loading. Using a boundary integral equation method the complete solution as well as the near field solution is determined. A comparison of the two fields indicates that the singular field dominates within a small domain at the crack tip. The size of the dominance region in the dynamic case may be very different from that in the static case. 相似文献
150.