Electrochemical Faceting of polycrystalline platinum in HF solutions

The electrochemical faceting of polycrystalline (pc) platinum yielding a (100)-preferred oriented electrode surface was accomplished in HF solutions by applying to the pc platinum electrode a square wave potential perturbation at 1 kHz in the 0.2 to 1.3 V range (vs rhe). SEM patterns of the resulting surfaces were also obtained. For HF concentrations up to 2 M no appreciable influence of the electrolyte concentration on the electrochemical faceting was noticed. Otherwise, the voltammetric response of the (100)-type preferred oriented platinum surface in the H-adatom potential range when compared to previously reported data resulted remarkably sensitive to the electrolyte composition. The discussion of results was based on the non-equilibrium adsorption conditions for anions under the periodic perturbation.     

Potential of vibro-milling technique for preparation of electroceramic nanopowders

The potential of the vibro-milling technique as a simple method to obtain usable quantities of single-phase electroceramic powders with nanosized particles was examined. A detailed study considering the role of both milling time and firing condition on phase formation and particle size of the final product was performed. The calcination temperature for the formation of the desired phase was lower when longer milling times have been applied. More importantly, by employing an appropriate choice of the milling time and calcination condition, high purity electroceramic nanopowders have been successfully prepared with a simple solid-state reaction method.     

Effects of compressive and tensile stress on the growth mode of epitaxial oxide films

Oxide films were deposited on different substrates by laser molecular beam epitaxy. Reflection high-energy electron diffraction was performed to in situ investigate the change of growth mode and the lattice relaxation during the growth. An asymmetrical phenomenon was found in the two kinds of strain states, compressive stress and tensile stress of heterostructures with different lattice mismatch. In the case of BaTiO₃/SrTiO₃ (2.2%), 2D layer-by-layer growth mode without lattice relaxation can be maintained for a longer period for BTO films on STO with compressive stress, comparing to STO films on BTO with tensile stress. When MgO films were deposited on SrTiO₃ with a large mismatch of 7.8%, compressive stress leads to rapid lattice relaxation with a very thin wet layer, and 3D strained island were observed. As a comparison, SrTiO₃ films on MgO with tensile stress were configured. No RHEED patterns can be observed duo to a large tensile stress.     

Epoxy paint failure in B-52 fuel tanks: Part II. Influence of DIEGME concentration in the fuel on the failure process

A model has been proposed to explain the failure of the original BMS10-39 epoxy paint on upper vertical surfaces in B-52 fuel tanks. The model involves interaction of the paint with DIEGME, a fuel system ice inhibitor (FSII) in jet fuel, that is distilled from the liquid fuel. In this communication, distillation experiments used to support the model are refined to better match the mass transfer of vapor from fuel in a B-52 fuel tank at close to room temperature. The interaction of these lower temperature distillates with the paint affirms the earlier model. On the basis of these experiments it is proposed that paint failure may be controlled or eliminated by reducing the level of DIEGME in the fuel. Proposed changes in military jet fuel composition are detailed.     

Integration of prior knowledge of measurement noise in kernel density classification

Samples can be measured with different precisions and reliabilities in different experiments, or even within the same experiment. These varying levels of measurement noise may deteriorate the performance of a pattern recognition system, if not treated with care. Here we seek to investigate the benefit of incorporating prior knowledge about measurement noise into system construction. We propose a kernel density classifier which integrates such prior knowledge. Instead of using an identical kernel for each sample, we transform the prior knowledge into a distinct kernel for each sample. The integration procedure is straightforward and easy to interpret. In addition, we show how to estimate the diverse measurement noise levels in a real world dataset. Compared to the basic methods, the new kernel density classifier can give a significantly better classification performance. As expected, this improvement is more obvious for small sample size datasets and large number of features.     

Laminar-turbulent transition in an electromagnetically levitated droplet

During experiments on the MSL-1 (first microgravity science laboratory) mission of the space shuttle (STS-83 and STS-94, April and July 1997), a droplet of palladium-silicon alloy was electromagnetically levitated for viscosity measurements. For the nondeforming droplet, the resultant magnetohydrodynamic (MHD) flow inside the drop can be inferred from motion of impurity particulates on the surface. In the experiments, subsequent to melting, Joule heating produces a continuous reduction of viscosity of the fluid resulting in an acceleration of the flow with time. These observations indicate formation of a pair of co-rotating toroidal flow structures inside the spheroidal drop that undergo flow instabilities. As the fluid temperature rises, the amplitude of the secondary flow increases, and beyond a point, the tracers exhibit noncoherent chaotic motion signifying emergence of turbulence inside the drop. Assuming that the observed laminar-turbulent transition is shear-layer type, the internal structure of the toroidal loops is used to develop a semiempirical correlation for the onset of turbulence. Our calculations indicate that the suggested correlation is in modest agreement with the experimental data, with the transition occurring at a Reynolds number of 600.     

SHS of shape memory CuZnAl alloys

Aiming at preparation of shape memory alloys (SMAs), we explored the SHS of Cu_{1 − x} Zn_{1 − y} Al_{1 − z} alloys (0.29 < x < 0.30, 0.74 < y < 0.75, and 0.83 < z < 0.96). The most pronounced shape memory effect was exhibited by the alloys of the following compositions (wt %): (1) Cu(70.6)Zn(25.4)Al(4.0), (2) Cu(70.1)Zn(25.9)Al(4.0), and (3) Cu(69.9)Zn(26.1)Al(4.0). The effect of process parameters on the synthesis of CuZnAl alloys was studied by XRD, optical microscopy, and scanning electron microscopy (SEM). The grain size of CuZnAl was found to depend on the relative amount of the primary CuZn and AlZn phases. Changes in the transformation temperature and heat of transformation are discussed in terms of ignition intensity and compaction. Mechanism of the process depends on the level of the temperature attained relative to the melting point of components. At the melting point of AlZn, the process is controlled by the solid-state diffusion of AlZn into a product layer. The ignition temperature for this system depends on the temperature of the austenite-martensite transformation in CuZnAl alloys. The composition and structure of the products was found to markedly depend on process parameters. The SHS technique has been successfully used to prepare a variety of SMAs.      

Integrated carbon nanotube field emission differential amplifier: Modeling and measurement of the common-mode rejection ratio

A novel integrated vacuum field emission (VFE) differential amplifier (diff-amp) utilizing carbon nanotube (CNT) emitters has been developed. A dual-mask microfabrication process was employed to achieve a VFE diff-amp by integrating identical CNT VFE transistors with built-in split gates and integrated anodes. The identical pair of triode amplifiers was well-matched in their device characteristics. The measured ac small-signal characteristics of the diff-amp showed a common-mode-rejection ratio (CMRR) of ~ 320 (~ 50 dB). The proposed analytical model of the CMRR was verified to be in good agreement with the experimental data. The successful implementation of the CNT diff-amp demonstrates a new way to achieve temperature and radiation tolerant VFE integrated microelectronics.